60N60B2D1 [IXYS]
B2-Class High Speed IGBTs (Electrically Isolated Back Surface); B2级高速的IGBT （电隔离背面）
| 型号： | 60N60B2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | B2-Class High Speed IGBTs (Electrically Isolated Back Surface) |
| 文件： | 总6页 (文件大小：514K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 60N60B2
IXGR 60N60B2D1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.0 V
= 100 ns
B2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
D1
Symbol
TestConditions
Maximum Ratings
PLUS247(IXGR)
E153432
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
20
30
V
V
C
(ISOLATED TAB)
E
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
75
47
A
A
A
G = Gate
E = Emitter
C = Collector
TC = 25°C, 1 ms
300
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 150
A
Features
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
z
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
PC
TC = 25°C
250
W
z
z
z
z
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
- drive simplicity
VISOL
50/60 Hz, RMS, t = 1m
2500
5
V
g
Applications
Weight
z
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
z
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
z
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Advantages
Min. Typ. Max.
z
Easy assembly
High power density
Very fast switching speeds for high
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
z
z
VCE = VCES
VGE = 0 V
300
5
µA
mA
frequency applications
TJ = 125°C
IGES
VCE = 0 V, VGE = 20 V
100
2.0
nA
V
VCE(sat)
IC = 50 A, VGE = 15 V
Note 1
© 2004 IXYS All rights reserved
DS99161(04/04)
IXGR 60N60B2
IXGR 60N60B2D1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
ISOPLUS 247 Outline
IC = 50 A; VCE = 10 V,
Note 1
40
58
S
Cies
Coes
Cres
3900
340
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
100
Qg
170
25
nC
nC
nC
Qge
Qgc
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
57
td(on)
tri
td(off)
tfi
28
30
ns
ns
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
160 270 ns
100 170 ns
1.0 2.5 mJ
VCE = 400 V, RG = Roff = 3.3 Ω
Eoff
td(on)
tri
28
36
ns
ns
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
Eon
td(off)
tfi
1.5
310
240
2.8
mJ
ns
VCE = 400 V, RG = Roff = 2.0 Ω
ns
Eoff
mJ
RthJC
RthCK
0.5 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 60 A, VGE = 0 V,
Note 1
2.1
1.4
V
V
TJ = 150°C
IRM
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
8.3
A
trr
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
ns
0.85 K/W
RthJC
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
350
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
13V
11V
VGE = 15V
13V
9V
11V
9V
7V
7V
5V
5V
5
0
0.5
0.5
5
1
1.5
2
2.5
3
0
-50
4
1
2
3
4
6
7
8
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. Dependence of VCE(sat) on
Temperature
100
90
80
70
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
11V
9V
VGE = 15V
IC = 100A
7V
IC = 50A
IC = 25A
5V
1
1.5
VCE - Volts
2
2.5
3
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
300
250
200
150
100
50
TJ = 25ºC
IC = 100A
50A
25A
TJ = 125ºC
-40ºC
TJ = 25ºC
0
5
6
7
8
9
10
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
VG E - Volts
© 2004 IXYS All rights reserved
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
10
9
100
90
80
70
60
50
40
30
20
10
0
TJ = 125ºC
VGE = 15V
VCE = 400V
TJ = -40ºC
25ºC
125ºC
8
7
IC = 100A
6
5
4
IC = 50A
IC = 25A
3
2
1
0
20
0
50
100
150
200
250
300
0
5
10 15 20 25 30 35 40 45 50
R G - Ohms
I C - Amperes
Fig. 9. Dependence of Turn-Off
Ene r gy on Ic
Fig. 10. Dependence of Turn-Off
Energy on Temperature
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
RG = 3.3Ω
VGE = 15V
VCE = 400V
RG = 3.3Ω
VGE = 15V
VCE = 400V
IC = 100A
IC = 50A
TJ = 125ºC
TJ = 25ºC
IC = 25A
30
40
50 60
I C - Amperes
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Switching Time on RG
Fig. 12. Dependence of Turn-Off
Switching Time on Ic
1200
1100
1000
900
800
700
600
500
400
300
200
400
350
300
250
200
150
100
50
td(off)
tfi - - - - - -
RG = 3.3Ω
td(off)
tfi - - - - - -
TJ = 125ºC
VGE = 15V
VCE = 400V
VGE = 15V
VCE = 400V
TJ = 125ºC
IC = 25A
IC = 50A
TJ = 25ºC
IC = 100A
5
10 15 20 25 30 35 40 45 50
R G - Ohms
20
30
40
50
60
I C - Amperes
70
80
90
100
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 60N60B2
IXGR 60N60B2D1
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
Fig. 14. Gate Charge
350
300
250
200
150
100
50
15
12
9
td(off)
VCE = 300V
IC = 25A
50A
100A
IC = 50A
t -
fi
- - - - -
IG = 10mA
RG = 3.3Ω
VGE = 15V
VCE = 400V
6
IC = 100A
50A
25A
3
0
0
20
40
60
80 100 120 140 160 180
25 35 45 55 65 75 85 95 105 115 125
QG - nanoCoulombs
TJ - Degrees Centigrade
Fig. 15. Capacitance
10000
1000
100
f = 1 MHz
C
ies
C
oes
C
res
10
0
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
0.55
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
IXGR 60N60B2
IXGR 60N60B2D1
160
A
140
4000
nC
80
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
A
120
100
80
60
40
20
0
3000
2000
1000
0
60
IF
TVJ= 25°C
TVJ=100°C
IF=120A
IF= 60A
IF= 30A
IRM
Qr
IF=120A
IF= 60A
IF= 30A
40
20
0
TVJ=150°C
A/µs
-diF/dt
0
1
2
V
100
1000
0
200 400 600 1000
A/µs
-diF/dt
VF
Fig. 17. Forward current IF versus VF
2.0
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
Fig. 19. Peak reverse current IRM
versus -diF/dt
140
20
V
1.6
µs
TVJ= 100°C
VR = 300V
ns
130
VFR
tfr
trr
1.5
Kf
15
10
5
1.2
VFR
tfr
120
110
100
90
IF=120A
IF= 60A
IF= 30A
1.0
0.8
0.4
0.
IRM
0.5
Qr
TVJ= 100°C
IF = 60A
0.0
80
0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 20. Dynamic parameters Qr, IRM
versus TVJ
Fig. 21. Recovery time trr versus -diF/dt
Fig. 22. Peak forward voltage VFR and
tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
0.1
1
2
3
4
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399
ZthJC
0.01
0.001
DSEP 2x61-06A
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
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