60N75-TA3-T [UTC]
60Amps, 75Volts N-CHANNEL POWER MOSTFET; 60安培, 75Volts N沟道功率MOSTFET![60N75-TA3-T](http://pdffile.icpdf.com/pdf1/p00122/img/icpdf/60N75_670930_icpdf.jpg)
型号: | 60N75-TA3-T |
厂家: | ![]() |
描述: | 60Amps, 75Volts N-CHANNEL POWER MOSTFET |
文件: | 总8页 (文件大小:247K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
UNISONIC TECHNOLOGIES CO., LTD
60N75
Power MOSFET
60Amps, 75Volts
N-CHANNEL POWER MOSTFET
DESCRIPTION
The UTC 60N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
FEATURES
* RDS(ON) = 16mΩ @VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80pF )
* Fast switching capability
*Pb-free plating product number: 60N75L
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
D
D
D
3
S
S
S
S
S
60N75-TA3-T
60N75-TF3-T
60N75-TM3-T
60N75-TN3-R
60N75-TN3-T
60N75L-TA3-T
60N75L-TF3-T
60N75L-TM3-T
60N75L-TN3-R
60N75L-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
Tube
Tube
G
G
G
G
G
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 8
Copyright © 2007 Unisonic Technologies Co., Ltd.
QW-R502-112.A
60N75
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain to Source Voltage
75
60
TC = 25℃
A
Continuous Drain Current
ID
TC = 100℃
56
A
Drain Current Pulsed (Note 1)
Gate to Source Voltage
IDM
VGS
EAS
300
±20
A
V
Single Pulsed (Note 2)
Repetitive (Note 1)
900
300
mJ
mJ
V/ns
W
Avalanche Energy
EAR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation
15
TC = 25℃
220
PD
Derating above 25℃
1.4
W/℃
℃
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55 ~ +150
-55 ~ +150
℃
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
62.5
0.8
UNIT
℃/W
℃/W
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJC
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS = 0 V, ID = 250 µA
ID = 1mA,
Referenced to 25℃
VDS = 75 V, VGS = 0 V
75
V
V/℃
µA
△BVDSS/△TJ
0.08
20
Drain-Source Leakage Current
IDSS
V
DS = 75 V, VGS = 0 V,
250
µA
TJ = 150℃
Forward
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
100
nA
nA
Gate-Source Leakage Current
IGSS
Reverse
-100
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 48 A
2.0
4.0
16
V
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
mΩ
CISS
COSS
CRSS
3300
530
80
pF
pF
pF
VGS = 0 V, VDS = 25 V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
12
79
80
52
90
20
30
ns
ns
Turn-On Rise Time
VDD = 38V, ID =48A,
VGS=10V (Note 4, 5)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
140
35
nC
nC
nC
V
V
DS = 60V, ID = 48A,
GS = 10 V (Note 4, 5)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge (Miller Charge)
45
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-112.A
www.unisonic.com.tw
60N75
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
IS
IS = 48A, VGS = 0 V
1.4
75
V
A
ISM
tRR
QRR
300
IS = 48A, VGS = 0 V
dIF / dt = 100 A/µs
90
ns
300
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=0.24mH, IAS=48A, VDD = 50V, RG=20Ω, Starting TJ=25℃
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
3 of 8
QW-R502-112.A
www.unisonic.com.tw
60N75
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 8
QW-R502-112.A
www.unisonic.com.tw
60N75
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RG
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 8
QW-R502-112.A
www.unisonic.com.tw
60N75
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
VGS
Top: 15V
10V
8V
7V
6V
5.5V
102
101
102
101
5V
Bottorm: 4.5V
4.5V
Note:
1. VDS=25V
2. 20µs Pulse Test
100
100
101
Drain-Source Voltage, VDS (V)
10-1
100
2
3
4
5
6
7
8
9 10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
6 of 8
QW-R502-112.A
www.unisonic.com.tw
60N75
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
7 of 8
QW-R502-112.A
www.unisonic.com.tw
60N75
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
8 of 8
QW-R502-112.A
www.unisonic.com.tw
相关型号:
©2020 ICPDF网 联系我们和版权申明