FDN304PZ [TYSEMI]
SuperSOT-3;
| 型号： | FDN304PZ |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SuperSOT-3 晶体 晶体管 开关 光电二极管 PC |
| 文件： | 总2页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
FDN304P
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
·
–2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V
RDS(ON) = 70 mW @ VGS = –2.5 V
RDS(ON) = 100 mW @ VGS = –1.8 V
·
·
·
Fast switching speed
ESD protection diode
Applications
·
·
·
Battery management
Load switch
High performance trench technology for extremely
low RDS(ON)
Battery protection
·
SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–20
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
±8
(Note 1a)
–2.4
–10
0.5
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
RqJA
°C/W
°C/W
RqJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
04Z
FDN304PZ
7’’
8mm
http://www.twtysemi.com
1of 2
sales@twtysemi.com
4008-318-123
Product specification
FDN304P
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 mA
Breakdown Voltage Temperature
Coefficient
–13
DBVDSS
DTJ
ID = –250 mA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = –16 V, VGS = 0 V
–1
mA
IGSS
uA
VGS = ±8 V, VDS = 0 V
±10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–10
–0.8
3
–1.5
V
VDS = VGS, ID = –250 mA
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = –250 mA,Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8V,
ID = –2.4 A
ID = –2.0 A
ID = –1.8 A
36
47
65
52
70
100
mW
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
A
S
Forward Transconductance
ID = –1.25 A
12
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1310
240
106
5.6
pF
pF
pF
W
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
15
40
25
12
2
27
27
64
40
20
ns
ns
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 W
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –10 V,
VGS = –4.5 V
ID = –2.4 A,
2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –0.42
(Note 2)
–0.6
18
7
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = –2.4 A,
diF/dt = 100 A/µs
Qrr
nC
Notes:
1.
RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
0.02 in pad of 2 oz. copper.
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
http://www.twtysemi.com
2of 2
sales@twtysemi.com
4008-318-123
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