FDN306P [TYSEMI]

SuperSOT-3;


型号：	FDN306P
厂家：	TY Semiconductor Co., Ltd
描述：	SuperSOT-3
文件：	总2页 (文件大小：273K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Product specification

FDN306P

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

• –2.6 A, –12 V. R_DS(ON)= 40 mΩ @ V_GS= –4.5 V

_DS(ON)= 50 mΩ @ V_GS= –2.5 V

R_DS(ON)= 80 mΩ @ V_GS= –1.8 V

• Fast switching speed

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Battery management

• Load switch

• SuperSOT^TM-3 provides low R_DS(ON)and 30% higher

power handling capability than SOT23 in the same

footprint

• Battery protection

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–12

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

–2.6

–10

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

3000 units

306

FDN306P

7’’

8mm

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

SMD Type

Product specification

FDN306P

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

–12

V_GS= 0 V,

I_D= –250 µA

Breakdown Voltage Temperature

–3

∆BV^DSS

∆T_J

I_D= –250 µA,Referenced to 25°C

mV/°C

Coefficient

I_DSS

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= –10 V,

V_GS= 8 V,

V_GS= 0 V

V_DS= 0 V

–1

100

–100

µA

I_GSSF

I_GSSR

V_GS= –8 V,

On Characteristics

(Note 2)

Gate Threshold Voltage

V_GS(th)

–0.4

–10

–0.6

2.5

–1.5

V_DS= V_GS

I_D= –250 µA,Referenced to 25°C

I_D= –250 µA

Gate Threshold Voltage

∆V^GS(th)

∆T_J

R_DS(on)

mV/°C

Temperature Coefficient

Static Drain–Source

On–Resistance

V_GS= –4.5 V, I_D= –2.6 A

V_GS= –2.5 V, I_D= –2.3 A

mΩ

V_GS= –1.8V,

I_D= –1.8 A

V_GS= –4.5 V, I_D= –2.6A , T_J=125°C

I_D(on)

g_FS

On–State Drain Current

Forward Transconductance

V_GS= –4.5 V, V_DS= –5 V

V_DS= –5 V,

I_D= –2.6 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

1138

454

302

V_DS= –6 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 2)}

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= –6 V,

I_D= –1 A,

V_GS= –4.5 V,

R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

V_DS= –6 V,

I_D= –2.6 A,

_GS= –4.5 V

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–0.42

–1.2

V_SD

Drain–Source Diode Forward

V_GS= 0 V,

I_S= –0.42 ^{(Note 2)}

–0.6

Voltage

Notes:

R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

b) 270°C/W when mounted on a

minimum pad.

a) 250°C/W when mounted on a

0.02 in pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123