FDN308P [FAIRCHILD]
P-Channel 2.5V Specified PowerTrench MOSFET; P沟道2.5V指定的PowerTrench MOSFET型号: | FDN308P |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | P-Channel 2.5V Specified PowerTrench MOSFET |
文件: | 总5页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
• –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V
DS(ON) = 190 mΩ @ VGS = –2.5 V
R
• Fast switching speed
• High performance trench technology for extremely
Applications
low RDS(ON)
• Power management
• Load switch
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
• Battery protection
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
–20
Units
V
V
A
VGSS
Gate-Source Voltage
±12
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
–1.5
–10
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W
0.5
PD
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
250
75
RθJA
°C/W
°C/W
Thermal Resistance, Junction-to-Case
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
308
FDN308P
7’’
8mm
3000 units
FDN308P Rev B(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–13
ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 0 V
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–1
µA
nA
nA
IGSSF
IGSSR
VGS = 12 V,
VGS = –12 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.6
–1.0
3
–1.5
V
VDS = VGS, ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.3 A
86
136
114
125
190
178
mΩ
V
GS = –4.5 V, ID = –1.5A TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –1.5 A
–5
A
S
Forward Transconductance
12
Dynamic Characteristics
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
341
83
43
8
pF
pF
pF
ns
ns
ns
ns
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
16
20
22
16
5.4
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
10
12
8
td(off)
tf
Qg
Total Gate Charge
3.8
0.8
1.0
nC
nC
nC
V
DS = –10V,
ID = –1.5 A,
VGS = –4.5 V
Qgs
Qgd
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
–0.7
V
GS = 0 V, IS = –0.42
(Note 2)
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
0.02 in pad of 2 oz. copper.
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN308P Rev B(W)
Typical Characteristics
10
2
1.8
1.6
1.4
1.2
1
VGS = -4.5V
-3.5V
-3.0V
-4.0V
8
6
4
2
0
VGS = -2.5V
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
-2.0V
0.8
0
2
4
6
8
10
0
1
2
3
4
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.34
0.3
1.5
1.4
ID = -0.8 A
ID = -1.5A
VGS = -4.5V
1.3
1.2
1.1
1
0.26
0.22
0.18
0.14
0.1
TA = 125oC
0.9
0.8
0.7
TA = 25oC
0.06
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
8
VGS = 0V
TA = -55oC
VDS = - 5V
25oC
1
TA = 125oC
125oC
25oC
0.1
6
-55oC
0.01
0.001
4
2
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
3.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN308P Rev B(W)
Typical Characteristics
5
500
400
300
200
100
0
f = 1MHz
VGS = 0 V
VDS = -5V
ID = -1.5A
-10V
4
3
2
1
0
CISS
-15V
COSS
CRSS
0
5
10
15
20
0
1
2
3
4
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
20
15
10
5
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
10s
DC
VGS =-4.5V
SINGLE PULSE
0.1
0.01
RθJA = 270oC/W
TA = 25oC
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
0.2
RθJA = 270 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
0.01
t2
T
J - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN308P Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
相关型号:
FDN308P_NL
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN327ND87Z
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN327NL99Z
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN327NS62Z
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
FDN327N_NL
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明