FDN306P [FAIRCHILD]
P-Channel 1.8V Specified PowerTrench MOSFET; P沟道1.8V指定的PowerTrench MOSFET型号: | FDN306P |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | P-Channel 1.8V Specified PowerTrench MOSFET |
文件: | 总5页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
DS(ON) = 80 mΩ @ VGS = –1.8 V
R
• Fast switching speed
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
• Battery protection
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
8
(Note 1a)
–2.6
–10
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
W
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
306
FDN306P
7’’
8mm
3000 units
FDN306P Rev D (W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–12
V
V
GS = 0 V,
ID = –250 µA
Breakdown Voltage Temperature
–3
∆BVDSS
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
Coefficient
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –10 V,
VGS = 8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
–1
100
–100
µA
nA
nA
IGSSF
IGSSR
VGS = –8 V,
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–0.4
–10
–0.6
2.5
–1.5
V
V
DS = VGS
,
ID = –250 µA
Gate Threshold Voltage
∆VGS(th)
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –2.6 A
30
39
54
40
40
50
80
54
mΩ
V
GS = –2.5 V, ID = –2.3 A
VGS = –1.8V,
ID = –1.8 A
VGS = –4.5 V, ID = –2.6A , TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –4.5 V, VDS = –5 V
A
S
VDS = –5 V,
ID = –2.6 A
10
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1138
454
302
pF
pF
pF
VDS = –6 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
10
38
35
12
2
20
20
61
56
17
ns
ns
ns
VDD = –6 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –6 V,
ID = –2.6 A,
V
GS = –4.5 V
3
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V,
IS = –0.42 (Note 2)
–0.6
Voltage
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
2
0.02 in pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN306P Rev D W)
Typical Characteristics
20
2.2
2
VGS = -4.5V
-2.5V
-3.0V
-2.0V
VGS = -1.8V
15
10
5
1.8
1.6
1.4
1.2
1
-2.0V
-1.8V
-2.5V
-3.0V
-1.5V
-3.5V
-4.5V
0
0.8
0
1
2
3
4
0
5
10
-ID, DIRAIN CURRENT (A)
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
1.2
1.1
1
0.12
ID = -1.3A
ID = -2.6A
VGS = -4.5V
0.1
0.08
0.06
0.04
0.02
TA = 125oC
0.9
0.8
TA = 25oC
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
20
TA = -55oC
VGS = 0V
25oC
-125oC
VDS = -5V
1
0.1
TA = 125oC
15
10
5
25oC
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN306P Rev D W)
Typical Characteristics
5
2000
1600
1200
800
400
0
VDS = -4V
ID = -2.6A
f = 1 MHz
GS = 0 V
-6V
V
4
3
2
1
0
-8V
CISS
COSS
CRSS
0
3
6
9
12
15
0
3
6
9
12
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
100
10
SINGLE PULSE
R
θJA = 270°C/W
TA = 25°C
RDS(ON) LIMIT
100µs
1ms
10ms
100ms
1s
1
DC
VGS = -4.5V
SINGLE PULSE
0.1
0.01
R
θJA = 270oC/W
T
A = 25oC
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJA(t) = r(t) * RθJA
θJA = 270oC/W
0.2
0.1
0.1
0.05
0.02
t1
0.01
t2
TJ - TA = P * RθJA(t)
0.01
SINGLE PULSE
Duty Cycle, D = t1 / t2
100 1000
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN306P Rev D W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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