DMN3730U [TYSEMI]
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23; 30V N沟道增强型MOSFET ，SOT23封装
| 型号： | DMN3730U |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 |
| 文件： | 总3页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMN3730U
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
Features and Benefits
•
•
•
•
•
•
Low VGS(th), can be driven directly from a battery
Low RDS(on)
ID Max (Note 5)
TA = 25°C
V(BR)DSS
Max RDS(on)
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2kV
0.94A
0.85A
460mΩ @ VGS= 4.5V
560mΩ @ VGS= 2.5V
30V
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
•
•
Case: SOT23
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish-Matte Tin.
Weight: 0.08 grams (approximate)
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•
•
Load switch
Portable applications
Power Management Functions
Drain
SOT23
D
Body
Diode
Gate
Gate
Protection
Diode
Source
S
G
Top View
Equivalent Circuit
Top View
Pin-Out
ESD PROTECTED TO 2kV
Ordering Information (Note 3)
Part Number
DMN3730U-7
Marking
N3U
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3,000
Notes:
1. No purposefully added lead
Marking Information
N3U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
N3U
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Product specification
DMN3730U
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±8
V
VGSS
TA = 25°C (Note 5)
Steady
State
0.94
0.68
0.75
Continuous Drain Current
A
A
TA = 85°C (Note 5)
TA = 25°C (Note 4)
ID
Pulsed Drain Current (Note 6)
10
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
0.45
0.71
275
177
Unit
W
W
°C/W
°C/W
°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
2. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
3. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
4. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
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Product specification
DMN3730U
1
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.9
0.1
r(t) @ D=0.7
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.01
0.01
0.001
r(t) @ D=0.01
R
R
(t) = r(t)*R
= 176C/W
θ
JA
θJA
r(t) @ D=0.005
θJA
Duty Cycle, D = t1/t2
r(t) @ D=Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 10μA
VDS = 30V, VGS = 0V
VGS = ±8V, VDS = 0V
1
3
μA
μA
-
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
0.45
-
-
-
0.95
460
560
730
-
V
VGS(th)
RDS(on)
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 100mA
VGS = 1.8V, ID = 75mA
VDS = 3V, ID = 10mA
VGS = 0V, IS = 300mA
mΩ
Static Drain-Source On-Resistance (Note 7)
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
40
-
-
mS
V
|Yfs|
VSD
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
1.6
0.2
0.2
3.5
2.8
38
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = 4.5V, VDS = 15V,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
ID = 1A
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
Turn-Off Delay Time
tD(off)
tf
13
Turn-Off Fall Time
Notes:
5. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
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DIODES
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