DMN3404LQ-7 [TYSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance; N沟道增强型MOSFET的低导通电阻
| 型号： | DMN3404LQ-7 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance |
| 文件： | 总3页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMN3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max
TA = +25°C
5.8A
Low On-Resistance
V(BR)DSS
RDS(ON) max
Low Input Capacitance
28mΩ @ VGS = 10V
42mΩ @ VGS = 4.5V
82mΩ @ VGS = 3V
Fast Switching Speed
30V
4.8A
Low Input/Output Leakage
2.0A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Applications
Battery Charging
Power Management Functions
DC-DC Converters
e3
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Portable Power Adaptors
Drain
D
Gate
S
G
Source
Top View
Top View
Internal Schematic
Ordering Information (Note 4 & 5)
Part Number
DMN3404L-7
DMN3404LQ-7
Compliance
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
34N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
34N
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Product specification
DMN3404L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage (Note 6 & 7)
Gate-Source Voltage
Symbol
VDSS
VGSS
Value
30
±20
Units
V
V
TA = -40°C
4.6
4.2
3.0
Steady
State
A
A
A
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 7) VGS = 10V
Continuous Drain Current (Note 7) VGS = 4.5V
TA = +25°C
TA = +85°C
TA = -40°C
ID
ID
ID
6.2
5.8
4.0
Steady
State
T
A = +25°C
TA = +85°C
A = -40°C
T
5.2
4.8
3.2
Steady
State
TA = +25°C
TA = +85°C
TA = -40°C
TA = +25°C
2.2
2.0
1.0
Steady
State
A
A
Continuous Drain Current (Note 7) VGS = 3V
Pulsed Drain Current
ID
TA = +85°C
30
IDM
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.72
Unit
W
Power Dissipation (Note 6)
173
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C
Power Dissipation (Note 7)
RθJA
PD
1.4
90
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
RθJA
-55 to +150
T
J, TSTG
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
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Product specification
DMN3404L
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1.0
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 8 )
Gate Threshold Voltage
1.0
—
—
—
—
—
—
—
—
1.5
23
2.0
27
74
28
42
82
95
—
V
VGS(th)
VDS = VGS, ID = 250μA
—
—
V
V
GS = 4.5V, ID = 4.8A
GS=3V, ID =2A
Static Drain-Source On-Resistance TJ = -40°C (Note 9)
RDS(ON)
57
24
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.8A
VGS=3V, ID =2A
33
mꢀ
Static Drain-Source On-Resistance TJ = +25°C
RDS(ON)
63
71
mꢀ
S
Static Drain-Source On-Resistance TJ = +85°C (Note 9) RDS(ON)
VGS=3V, ID =2A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
10
|Yfs|
VSD
VDS = 5V, ID = 5.8A
VGS = 0V, IS = 1A
0.75
1.0
V
—
—
—
—
—
—
—
—
—
—
—
—
—
498
52
—
—
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
Output Capacitance
VDS = 15V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
45
—
1.75
3.8
2.8
5.3
7.5
16
—
V
DS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 3V)
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
VGS = 3V, VDS = 15V, ID = 1A
5.3
Qg
11.3
1.4
Qg
VGS = 10V/4.5V, VDS = 15V,
I
D = 5.8A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
2.1
—
Turn-On Delay Time
3.41
6.18
13.92
2.84
10
13
28
10
Turn-On Rise Time
VDD = 15V, VGS = 10V,
RL = 2.6ꢀ, RG = 3ꢀ
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design and 25°C data. Not subject to production testing
7. Guaranteed by design. Not subject to production testing.
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