DMN3410-7 [DIODES]
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 3 PIN;
| 型号： | DMN3410-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-59, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3410
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
SPICE MODELS: DMN3410
Features
·
·
·
·
·
Low Gate Threshold Voltage
A
SC-59
Ultra Low On-Resistance
Low Input/Output Capacitance
Low Input/Output Leakage
Fast Switching Speed
D
Dim
A
Min
0.35
1.50
2.70
Max
0.50
1.70
3.00
C
B
B
G TOP VIEW
S
C
G
H
D
0.95 nominal
1.90 nominal
Mechanical Data
G
H
·
·
·
·
Case: SC-59, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
K
J
2.90
0.013
1.00
0.35
0.10
0°
3.10
0.10
1.30
0.55
0.20
8°
M
J
K
L
D
F
L
Drain
·
·
·
·
Terminal Connections: See Diagram
Marking: A2, See Page 5
Weight: 0.008 grams (approx.)
Ordering Information, See page 5
M
a
All Dimensions in mm
Gate
Source
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
Value
Units
VDSS
VGSS
30
V
V
Drain-Source Voltage
Gate-Source Voltage
±12
Drain Current (Note 1) Continuous
TA = 25°C
TA = 70°C
4
3.4
ID
A
IDM
Pd
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
15
1.3
A
W
RqJA
Thermal Resistance, Junction to Ambient (Note 1) t £10s
90
°C/W
°C
Tj, TSTG
-55 to +150
Operating and Storage Temperature Range
Note:
1. Per mounting conditions described in Note 2.
2. The value of RqJA is measured with the device mounted on 1 in FR-4 PC board with 2 oz. Copper, in a still air environment at
TA = 25°C. The current rating is based on the t £10s Thermal Resistance rating.
2
3. Repetitive Rating, pulse width limited by junction temperature.
DS30375 Rev. 5 - 2
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DMN3410
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
STATIC PARAMETERS
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID = 250mA, VGS = 0V
30
¾
¾
¾
V
TJ = 25°C
TJ = 55°C
1
5
V
DS = 24V, VGS = 0V
¾
mA
VDS = 0V, VGS = +12V
VDS = VGS, ID = 250mA
VGS = 4.5V, VDS = 5V
IGSS
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current
¾
0.6
10
¾
1
100
1.4
¾
nA
V
VGS(th)
ID (ON)
¾
A
VGS = 10V, ID = 4A
VGS = 4.5V, ID = 3A
VGS = 2.5V, ID = 2A
48
55
83
58
70
110
RDS (ON)
Static Drain-Source On-Resistance
¾
mW
V
DS = 5V, ID = 4A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
¾
¾
¾
8
¾
1
S
V
A
IS = 1A, VGS = 0V
0.8
¾
2.5
Ciss
Coss
Crss
Rg
¾
¾
¾
¾
390
54.5
41
¾
¾
¾
¾
pF
pF
pF
W
V
GS = 0V, VDS = 15V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 4A
3
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
Qgd
tD(on)
tr
¾
¾
¾
¾
¾
¾
¾
¾
¾
0.6
1.38
4.34
3.3
1
¾
¾
¾
¾
¾
¾
¾
¾
¾
nC
nC
nC
ns
ns
ns
ns
ns
nC
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 15V, RL =
3.75W, RGEN = 6W
tD(off)
tf
Turn-Off Delay Time
21.7
2.1
12
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IF = 4A, di/dt = 100A/ms
IF = 4A, di/dt = 100A/ms
Qrr
6.3
Note:
4. The static characteristics in Figures 1-6, 12, 14 are obtained using 80ms pulses, duty cycle 0.5% max.
5. These tests are performed with device mounted on 1 in FR-4 PC board with 2 oz. copper, in a still air environment at TA = 25°C.
2
The SOA curve provides a single pulse rating.
DS30375 Rev. 5 - 2
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DMN3410
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15
12
9
10
8
VGS = 10V
VGS = 3V
VGS = 4.5V
6
VGS = 2.5V
4
6
TJ = 125°C
2
3
0
VGS = 2V
TJ = 25°C
0
2.5
3
0
0.5
1
1.5
2
3.5
1
2
4
0
3
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
1.8
1.6
1.4
1.2
1
150
125
100
75
VGS = 4.5V
VGS = 2.5V
VGS = 10V
VGS = 4.5V
VGS = 10V
VGS = 2.5V
50
25
0
0.8
0
2
4
6
8
10
125
0
25
50
75
100
175
150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance vs. Junction Temperature
Fig. 3 On-Resistance vs. Drain Current and Gate Voltage
200
1.0E+01
1.0E+00
1.0E-01
ID = 2A
150
TJ = 125°C
1.0E-02
1.0E-03
1.0E-04
100
TJ = 25°C
TJ = 125°C
50
1.0E-05
1.0E-06
TJ = 25°C
0.2
0.6
0.4
0.8
1.2
1.0
0.0
0
2
8
0
4
6
10
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 Body-Diode Forward Voltage Variation with
Source Current and Temperature
Fig. 5 On-Resistance vs. Gate-Source Voltage
DS30375 Rev. 5 - 2
3 of 5
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DMN3410
600
500
400
300
200
5
4
VDS = 15V
ID = 4A
f = 1MHz
Ciss
3
2
Coss
Crss
1
0
100
0
0
25
30
5
10
15
20
1
2
4
0
3
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Capacitance Characteristics
QG, GATE CHARGE (nC)
Fig. 7 Gate-Charge Characteristics
20
100.0
10.0
1.0
TJ(MAX) = 150°C
TJ(MAX) = 150°C
TA = 25°C
TA = 25°C
15
10
5
RDS(ON) limited
1ms
1s
0.1s
10ms
10s
DC
0.1
1
0.1
10
0
100
0.1
1
100
0.01
0.001
10
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Maximum Forward Biased Safe
Operating Area (Note 5)
PULSE WIDTH (s)
Fig. 10 Single Pulse Power Rating Junction-to
Ambient (Note 5)
10
In descending order
D = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Toff
Single Pulse
0.01
0.00001
0.01
0.0001
0.001
0.1
1
10
100
1000
PULSE WIDTH (s)
Fig. 11 Normalized Maximum Transient Thermal Impedance
DS30375 Rev. 5 - 2
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DMN3410
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(Note 6)
Ordering Information
Device
Packaging
Shipping
DMN3410-7
SC-59
3000/Tape & Reel
Notes:
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A2 = Product Type Marking Code
W = Week and Year Code Marking
XY = Lot Code Marking
A2WXY
Y = Assembly Location, Diodes China
Week Code Key
Week
Code
0 - 1
2 - 3
4 - 5
6 - 7
8 - 9
10 - 11
12 - 13
14 - 15
16 - 17
A
B
C
D
E
F
G
H
J
Week
Code
18 - 19
20 - 21
22 - 23
24 - 25
26 - 27
28 - 29
30 - 31
32 - 33
34 - 35
K
L
N
O
P
R
S
T
U
Week
Code
36 - 37
38 - 39
40 - 41
42 - 43
44 - 45
46 - 47
48 - 49
50 - 51
52 - 53
V
X
Y
Z
1
2
3
4
5
Year Code Key
Year
2002
2003
2004
2005
Code
W
W
W
W
DS30375 Rev. 5 - 2
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DMN3410
相关型号：
DMN3730UFB-7B
Small Signal Field-Effect Transistor, 0.75A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006-3, 3 PIN
DIODES
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