2SK2796S [TYSEMI]

Low on-resistance High speed switching Drain to source voltage VDSS 60 V; 低导通电阻高速开关漏极至源极电压VDSS 60 V

2SK2796S


型号：	2SK2796S
厂家：	TY Semiconductor Co., Ltd
描述：	Low on-resistance High speed switching Drain to source voltage VDSS 60 V 低导通电阻高速开关漏极至源极电压VDSS 60 V 开关
文件：	总1页 (文件大小：103K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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IC

Product specification

2SK2796S

Features

TO-252

Unit: mm

Low on-resistance

R^DS= 0.12 typ.

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

High speed switching

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

V

60

Gate to source voltage

V

20

5

20

A

Drain current

I^dp*

P^D

A

Power dissipation

20

W

Channel temperature

Storage temperature

* PW 10 s,Duty Cycle 1%

T^ch

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^D=10mA,V^GS=0V

Min

60

Typ

Max

10

Unit

V

Drain source breakdown voltage

Drain cut-off current

V^DSS

I^DSS

I^GSS

V^DS=60V,V^GS=0

A

Gate leakage current

V^GS= 16V,V^DS=0

10

2.0

A

Gate to source cutoff voltage

Forward transfer admittance

V^GS(off)V^DS=10V,I^D=1mA

1.0

2.5

V

S

V^DS=10V,I^D=3A

V^GS=10V,I^D=3A

V^GS=4V,I^D=3A

4.0

Yfs

0.12 0.16

Drain to source on-state resistance

R^DS(on)

0.16 0.25

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^on

t^r

180

90

30

9

pF

pF

pF

ns

ns

ns

ns

V^DS=10V,V^GS=0,f=1MHZ

25

35

55

I^D=3A,V^GS(on)=10V,RL=10

Turn-off delay time

Fall time

t^off

tf

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