2SK2796STR-E [RENESAS]
Nch Single Power MOSFET 60V 5A 160mohm DPAK(S)/TO-252;
| 型号： | 2SK2796STR-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Nch Single Power MOSFET 60V 5A 160mohm DPAK(S)/TO-252 开关 电源开关 |
| 文件： | 总9页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1034-0500
(Previous: ADE-208-534C)
Rev.5.00
Sep 07, 2005
Features
•
Low on-resistance
RDS(on) = 0.12 Ω typ.
4 V gate drive devices.
High speed switching
•
•
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
1
2
3
S
Rev.5.00 Sep 07, 2005 page 1 of 8
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
60
V
V
±20
5
A
Note1
Drain peak current
ID(pulse)
20
A
Body-drain diode reverse drain current
Avalanche current
IDR
5
A
Note3
IAP
5
2.14
A
Note3
Avalanche energy
EAR
Pch Note2
mJ
W
°C
°C
Channel dissipation
20
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
60
±20
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IDSS
—
—
V
IG = ±100 µA, VDS = 0
VDS = 60 V, VGS = 0
—
10
±10
2.0
0.16
0.25
—
µA
µA
V
IGSS
—
—
VGS = ±16 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V Note4
ID = 3 A, VGS = 4 V Note4
ID = 3 A, VDS = 10 V Note4
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
0.12
0.16
4.0
180
90
Ω
—
Ω
Forward transfer admittance
Input capacitance
2.5
—
S
Ciss
Coss
Crss
td(on)
tr
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10V, VGS = 0,
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
30
—
—
9
—
VGS = 10 V, ID = 3 A,
RL = 10 Ω
—
25
—
Turn-off delay time
Fall time
td(off)
tf
—
35
—
—
55
—
Body–drain diode forward voltage
VDF
—
1.0
40
—
IF = 5A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
—
ns
IF = 5A, VGS = 0
diF/ dt =50 A/ µs
Note: 4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 8
2SK2796(L), 2SK2796(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
40
30
20
10
100
30
10
DC Operat
3
1
ion (Tc = 25
Operation in
this area is
limited by R
DS(on)
°
C)
0.3
0.1
Ta = 25°C
0
50
100
150
200
0.2 0.5
1
2
10 20
50 100
5
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
6 V
Typical Transfer Characteristics
10 V
5
4
3
2
1
5
4
3
2
1
5 V
4 V
3.5 V
25°C
–25°C
Pulse Test
3 V
Tc = 75°C
2.5 V
VDS = 10 V
Pulse Test
VGS = 2 V
8
0
0
2
4
6
8
10
2
4
6
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
5
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
2
1
0.5
ID = 5 A
VGS = 4 V
10 V
0.2
0.1
2 A
1 A
0.05
6
0
2
4
8
10
0.1 0.3
1
3
10
30
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 3 of 8
2SK2796(L), 2SK2796(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
5
0.5
0.4
0.3
0.2
0.1
Pulse Test
Tc = –25°C
1 A
25°C
2 A
2
ID = 5 A
75°C
1
VGS = 4 V
0.5
5 A
1, 2 A
0.2
0.1
VDS = 10 V
Pulse Test
10 V
0
0.5
1
2
5
–40
0
40
80
120
160
0.1 0.2
10
50
10
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1000
500
500
VGS = 0
f = 1 MHz
200
200
100
50
100
50
Ciss
Coss
Crss
20
10
5
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
0.1 0.2
0.5
1
2
5
10
0
10
20
30
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 5 A
Switching Characteristics
100
80
60
40
20
20
100
50
t
d(off)
VDD = 10 V
25 V
50 V
16
12
8
t
f
t
r
20
VDS
t
d(on)
10
5
VGS
4
0
VDD = 50 V
25 V
10 V
VGS = 10 V, VDD = 30 V
2
1
PW = 5 µs, duty < 1 %
0
0.5
1
2
5
2
4
6
8
10
0.1 0.2
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.5.00 Sep 07, 2005 page 4 of 8
2SK2796(L), 2SK2796(S)
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
8
2.5
2.0
1.5
1.0
IAP = 5 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
5 V
6
10 V
V
= 0, –5 V
GS
4
2
0.5
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 6.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
L
1
2
EAR
=
• L • IAP
•
VDS
Monitor
VDSS – VDD
2
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
I
D
Vin
15 V
50 Ω
VDD
0
Rev.5.00 Sep 07, 2005 page 5 of 8
2SK2796(L), 2SK2796(S)
Switching Time Test Circuit
Switching Time Waveforms
90%
Vout
Monitor
Vin Monitor
D.U.T.
10%
10%
Vin
RL
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.5.00 Sep 07, 2005 page 6 of 8
2SK2796(L), 2SK2796(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.42g
Unit: mm
PRSS0004ZD-A
DPAK(L)-(1) / DPAK(L)-(1)V
6.5 0.5
5.4 0.5
2.3 0.2
0.55 0.1
1.2 0.3
1.15 0.1
0.8 0.1
0.55 0.1
2.29 0.5
2.29 0.5
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name
MASS[Typ.]
0.28g
Unit: mm
DPAK(S) / DPAK(S)V
2.3 0.2
6.5 0.5
5.4 0.5
(5.1)
0.55 0.1
(0.1)
(0.1)
0 – 0.25
(1.2)
0.55 0.1
1.0 Max.
0.8 0.1
2.29 0.5
2.29 0.5
Rev.5.00 Sep 07, 2005 page 7 of 8
2SK2796(L), 2SK2796(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SK2796L-E
3200 pcs
3000 pcs
Box (Sack)
Taping
2SK2796STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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