2SK2799 [SHINDENGEN]
VX-2 Series Power MOSFET(350V 10A); VX - 2系列功率MOSFET （ 350V 10A ）
| 型号： | 2SK2799 |
| 厂家： | 
SHINDENGEN ELECTRIC MFG.CO.LTD |
| 描述： | VX-2 Series Power MOSFET(350V 10A) |
| 文件： | 总10页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2799
(F10F35VX2)
ase:FTO-220
(Unit : mm)
350V 10A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
APPLICATION
●Switching power supply of AC 100V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings （Tc = 25℃）
Item
Symbol
Conditions
Ratings Unit
-55～150 ℃
150
stg
StorageTemperature
T
T
ch
ChannelTemperature
DSS
Drain-SourceVoltage
V
350
±30
10
30
10
50
10
2
0.5
V
Gate-SourceVoltage
VGSS
D
I
DP
I
S
I
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak)
ContinuousSourceCurrent（DC）
TotalPowerDissipation
SinglePulseAvalancheCurrent
DielectricStrength
A
PT
W
AS
ch
T =25℃
I
Ｖ
A
kV
w
dis
Terminalstocase, AC 1minute
MountingTorque
TOR （Recommendedtorque: 0.3N･m ）
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2799 ( F10F35VX2 )
VX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
350
V
μA
IDSS
IGSS
gfs
VDS = 350V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 5A, VDS = 10V
250
±0.1
3.0
2.5
7.6
0.3
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 5A, VGS = 10V
0.4
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forwade Voltage
Theｒmal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
IS = 5A, VGS = 0V
θjc junction to case
2.5 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 200V, VGS = 10V, ID = 10A
40
1130
125
330
70
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 5A, RL = 30Ω, VGS = 10V
pF
105
ns
Turn-Off Time
toff
210 300
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2799
Transfer Characteristics
20
15
10
5
Tc = - 55°C
25°C
100°C
150°C
V
DS
= 15V
pulse test
TYP
0
0
5
10
15
20
Gate-Source Voltage VGS [V]
2SK2799 Static Drain-Source On-state Resistance
10
1
I = 5A
D
0.1
V
GS
= 10V
pulse test
TYP
0.01
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2799
Gate Threshold Voltage
5
4
3
2
1
0
V
= 10V
DS
I = 1mA
D
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2799
Safe Operating Area
100
10
1
100ms
200ms
R
limit
DS(ON)
1ms
10ms
DC
Tc = 25°C
Single Pulse
0.1
1
10
100
1000
Drain-Source Voltage VDS [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
2SK2799
Capacitance
10000
1000
100
Ciss
Coss
Crss
Tc=25°C
TYP
10
0
20
40
60
80
100
Drain-Source Voltage VDS [V]
2SK2799
Power Derating
100
80
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2799
Gate Charge Characteristics
250
200
150
100
50
20
15
10
5
V
= 200V
100V
50V
DD
V
V
GS
DS
I = 10A
D
0
0
100
0
20
40
60
80
Gate Charge Qg [nC]
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