2SK2800 [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK2800 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1035-0900
(Previous: ADE-208-513G)
Rev.9.00
Sep 07, 2005
Features
•
Low on-resistance
RDS(on) = 15 mΩ typ.
•
•
•
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
G
2. Drain
(Flange)
3. Source
1
2
3
S
Rev.9.00 Sep 07, 2005 page 1 of 7
2SK2800
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
60
±20
V
V
40
A
Note1
Drain peak current
ID(pulse)
160
A
Body-drain diode reverse drain current
Avalanche current
IDR
40
A
Note 3
IAP
40
A
Note 3
Avalanche energy
EAR
Pch Note 2
137
mJ
W
°C
°C
Channel dissipation
50
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
60
±20
—
—
1.5
—
—
20
—
—
—
—
—
—
—
—
—
V
V
ID = 10 mA, VGS = 0
—
—
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
—
±10
10
2.5
20
40
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
ID = 1 mA, VDS = 10V
ID = 20 A, VGS = 10V Note4
ID = 20 A, VGS = 4 V Note4
ID = 20 A, VDS = 10 V Note4
Static drain to source on state
resistance
15
mΩ
mΩ
S
25
Forward transfer admittance
Input capacitance
35
Ciss
Coss
Crss
td(on)
tr
1500
720
200
20
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
ID = 20 A, RL = 1.5 Ω,
VGS = 10 V
180
200
200
0.95
70
—
Turn-off delay time
Fall time
td(off)
tf
—
—
Body–drain diode forward voltage
VDF
—
IF = 40 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
V
IF = 40 A, VGS = 0
diF/ dt =50 A/µs
Note: 4. Pulse test
Rev.9.00 Sep 07, 2005 page 2 of 7
2SK2800
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
75
1000
300
100
30
10
50
3
1
Operation in
this area is
limited by R
DS(on)
25
0.3
0.1
Ta = 25°C
0
3
30
50
100
150
200
0.1 0.3
1
10
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
50
40
30
20
10
10 V
6 V
4.5 V
VDS = 10 V
Pulse Test
4 V
Pulse Test
3.5 V
Tc = 75°C
25°C
–25°C
VGS = 3 V
0
0
1
2
3
4
5
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.5
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
0.2
0.1
0.05
ID = 50 A
VGS = 4 V
0.02
0.01
20 A
10 A
10 V
0.005
12
0
4
8
16
20
1
2
5
10 20
50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.9.00 Sep 07, 2005 page 3 of 7
2SK2800
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
100
50
0.05
0.04
0.03
0.02
0.01
Pulse Test
Tc = –25°C
ID = 20 A
25°C
20
10 A
VGS = 4 V
75°C
10
5
50 A
10, 20 A
10 V
2
1
VDS = 10 V
Pulse Test
0
1
10 20
50
–40
0
40
80
120
160
5
100
2
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
5000
1000
500
f = 1 MHz
2000
1000
500
Ciss
200
100
50
Coss
200
100
Crss
20
10
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
50
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 40 A
Switching Characteristics
Switching Characteristics
100
80
60
40
20
20
1000
t
d(off)
300
100
16
12
8
VDD = 10 V
25 V
50 V
t
f
VGS
t
VDS
r
30
10
t
d(on)
4
0
VDD = 50 V
25 V
10 V
3
1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0
8
16
24
32
40
0.1 0.3
1
3
10
30
100
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.9.00 Sep 07, 2005 page 4 of 7
2SK2800
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
40
30
20
10
200
160
120
80
IAP= 40 A
VDD = 25 V
duty < 1 %
Rg > 50 Ω
10 V
5 V
VGS = 0, –5 V
40
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 2.5°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
L
1
2
EAR
=
• L • IAP •
VDS
Monitor
VDSS – VDD
V(BR)DSS
2
IAP
Monitor
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
50 Ω
15 V
VDD
0
Rev.9.00 Sep 07, 2005 page 5 of 7
2SK2800
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
VDD
= 30 V
Vin
10 V
Vout
10%
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.9.00 Sep 07, 2005 page 6 of 7
2SK2800
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
11.5 Max
10.16 0.2
4.44 0.2
9.5
8.0
+0.1
–0.08
1.26 0.15
φ 3.6
2.7 Max
1.5 Max
0.76 0.1
2.54 0.5
0.5 0.1
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SK2800-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.9.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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