2SK2802ZV-TL [HITACHI]
Power Field-Effect Transistor, 0.5A I(D), 30V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | 2SK2802ZV-TL |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 0.5A I(D), 30V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 晶体 开关 小信号场效应晶体管 电源开关 光电二极管 |
| 文件： | 总8页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2802
Silicon N Channel MOS FET
Low Frequency Power Switching
ADE-208-537C (Z)
4th. Edition
Jun 1998
Features
•
Low on-resistance
RDS(on) = 0. 2Ω typ. (VGS = 4 V, ID = 100 mA)
•
•
2.5V gate drive devices.
Small package (MPAK)
Outline
MPAK
3
1
D
2
G
1. Source
2. Gate
3. Drain
S
2SK2802
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
30
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±10
V
0.5
A
Note1
Drain peak current
ID(pulse)
1.0
A
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
Pch Note2
150
mW
°C
°C
Tch
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
ID = 100µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
IDSS
±10
—
—
—
V
IG = ±100µA, VDS = 0
Zero gate voltege drain
current
—
1.0
µA
VDS = 30 V, VGS = 0
Gate to source leak current
IGSS
—
—
±10
1.5
µA
V
VGS = ±6.5V, VDS = 0
ID = 10µA, VDS = 5V
ID = 100 mA
Gate to source cutoff voltage VGS(off)
0.5
—
—
Static drain to source on state RDS(on)
resistance
0.2
0.28
Ω
V
GS = 4VNote2
ID = 40 mA
GS = 2.5VNote2
ID = 250 mA
DS = 10VNote2
Static drain to source on state RDS(on)
resistance
—
0.3
1.2
0.5
—
Ω
V
Forward transfer admittance |yfs|
0.7
S
V
Input capacitance
Output capacitance
Ciss
—
—
—
—
—
—
—
14.0
68
—
—
—
—
—
—
—
pF
pF
pF
µs
µs
µs
µs
VDS = 10V
Coss
VGS = 0
Reverse transfer capacitance Crss
3.0
f = 1MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
0.27
1.5
VGS = 4V, ID = 250 mA
RL = 40Ω
Turn-off delay time
Fall time
2.2
2.15
Note: 2. Pulse test
3. Marking is “ZV–”
2
2SK2802
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1 ms
5
200
150
100
50
2
1
0.5
0.2
0.1
0.05
0.02
Operation in
this area is
limited by R
0.01
0.005
DS(on)
0.002
0.001
Ta = 25 °C
0.0005
0
50
100
150
200
0.05 0.1 0.2 0.5
1
2
5
20
50
10
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
Typical Output Characteristics
2 V
Typical Transfer Characteristics
4 V
0.5
0.4
0.3
0.2
0.1
0.5
0.4
0.3
0.2
0.1
1.8 V
25°C
75°C
Tc = –25°C
Pulse Test
1.6 V
V
= 10 V
DS
V
= 1.4 V
8
GS
Pulse Test
0
0
1
2
3
4 5
2
4
6
10
Gate to Source Voltage
V
(V)
GS
Drain to Source Voltage
V
(V)
DS
3
2SK2802
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
0.20
0.16
0.12
0.08
0.04
Pulse Test
Pulse Test
2
1
0.5
V
GS
= 2.5 V
4 V
0.2
0.1
I
= 0.2 A
0.1 A
D
0.05
6
0
2
4
8
10
0.1
0.2
Drain Current
0.5
1
Gate to Source Voltage
V
(V)
GS
I
(A)
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.4
0.3
0.2
0.1
5
V
= 10 V
DS
Pulse Test
I
= 0.1 A, 0.2 A
D
2
1
V
GS
= 2.5 V
Tc = –25 °C
0.5
25 °C
0.1 A, 0.2 A
0.2
0.1
75 °C
4 V
Pulse Test
120 160
Case Temperature Tc (°C)
0
–40
0.05
0
40
80
0.01 0.02
0.05 0.1
0.2
(A)
0.5
Drain Current
I
D
4
2SK2802
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
500
10000
3000
V
GS
= 0
f = 1 MHz
t
200
100
50
d(off)
t
f
Coss
1000
t
r
t
d(on)
300
100
20
10
5
Ciss
Crss
30
10
V
= 4 V, V
= 10 V
DD
GS
PW = 5 µs, duty < 1 %
2
1
0
4
8
12
16
20
0.05
0.1
0.2
0.5
(A)
1
Drain Current
I
D
Drain to Source Voltage
V
(V)
DS
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
0.3
0.2
0.1
V
= 0
GS
5 V
Pulse Test
0
0.4
0.8
1.2
1.6
SD
2.0
(V)
Source to Drain Voltage
V
5
2SK2802
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
R
L
10%
10%
90%
Vin
V
DD
Vin
4 V
Vout
10%
50W
= 10 V
90%
td(off)
td(on)
t
f
tr
6
2SK2802
Package Dimensions
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
0.4
0 ~ 0.15
0.95
0.95
1.9
+ 0.3
– 0.1
2.8
MPAK
SC–59A
Hitachi Code
EIAJ
TO–236Mod.
JEDEC
7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Europe
: http:semiconductor.hitachi.com/
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
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Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
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Electronic Components Group.
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Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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