2SK2800 [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK2800 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总10页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-513G (Z)
8th. Edition
Jun 1998
Features
•
Low on-resistance
RDS(on) = 15 mΩ typ.
High speed switching
Low drive current
•
•
•
4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
2SK2800
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
ID
±20
V
40
A
Note1
Drain peak current
ID(pulse)
160
A
Body-drain diode reverse drain current IDR
40
A
Note 3
Note 3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
40
A
EAR
137
mJ
W
°C
°C
Pch Note 2
50
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2800
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS 60
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VGS = ±16V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1mA, VDS = 10V
ID = 20A, VGS = 10VNote4
ID = 20A, VGS = 4VNote4
ID = 20A, VDS = 10VNote4
VDS = 10V
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
1.5
—
—
20
—
—
—
—
—
—
—
—
—
—
±10
10
2.5
20
40
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
15
mΩ
mΩ
S
25
Forward transfer admittance
Input capacitance
35
Ciss
Coss
Crss
td(on)
tr
1500
720
200
20
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1MHz
—
ID = 20A, RL = 1.5Ω
VGS = 10V
Rise time
180
200
200
0.95
70
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
—
IF = 40A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
V
IF = 40A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
3
2SK2800
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
75
1000
300
100
30
10
50
3
1
Operation in
this area is
limited by R
25
DS(on)
3
0.3
0.1
Ta = 25 °C
0
30
(V)
50
100
150
200
0.1 0.3
1
10
100
Drain to Source Voltage
V
DS
Case Temperature Tc (°C)
Typical Transfer Characteristics
Typical Output Characteristics
50
40
30
20
10
50
40
30
20
10
10 V
6 V
4.5 V
V
= 10 V
DS
Pulse Test
4 V
Pulse Test
Tc = 75°C
25°C
3.5 V
–25°C
V
= 3 V
8
GS
0
0
1
2
3
4
(V)
5
2
4
6
10
Gate to Source Voltage
V
GS
Drain to Source Voltage
V
(V)
DS
4
2SK2800
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.5
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
0.2
0.1
0.05
I
= 50 A
D
V
GS
= 4 V
10 V
0.02
0.01
20 A
10 A
0.005
12
Gate to Source Voltage
0
4
8
16
20
1
2
5
10 20
50 100
(A)
V
(V)
Drain Current
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
100
50
0.05
Pulse Test
Tc = –25 °C
0.04
0.03
0.02
0.01
I
= 20 A
D
25 °C
75 °C
20
10 A
V
= 4 V
GS
10
5
50 A
10, 20 A
10 V
0
2
1
V
= 10 V
DS
Pulse Test
0
–40
1
10 20 50
40
80
120
160
5
100
2
Case Temperature Tc (°C)
Drain Current
I
(A)
D
5
2SK2800
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
1000
500
V
GS
= 0
f = 1 MHz
2000
1000
500
Ciss
200
100
50
Coss
200
100
Crss
20
10
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
50
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
= 40 A
Switching Characteristics
100
80
20
1000
I
D
t
d(off)
300
100
16
12
8
V
= 10 V
25 V
DD
t
f
50 V
60
V
V
t
GS
r
DS
30
10
t
d(on)
40
20
4
0
V
= 50 V
25 V
10 V
3
1
DD
V
= 10 V, V
= 30 V
GS
DD
PW = 5 µs, duty < 1 %
10 30
(A)
0
8
16
24
32
40
0.1 0.3
1
3
100
Gate Charge Qg (nc)
Drain Current
I
D
6
2SK2800
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
200
160
120
80
I
= 40 A
AP
V
= 25 V
DD
duty < 1 %
W
10 V
Rg > 50
5 V
V
= 0, –5 V
GS
1.2
40
0
Pulse Test
1.6 2.0
0
0.4
0.8
25
50
75
100
125
150
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SD
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50W
V
DD
0
7
2SK2800
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
q
q
g
q
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50W
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK2800
Package Dimensions
Unit: mm
10.16±0.2
9.5
+ 0.1
– 0.08
4.44±0.2
f 3.6
8.0
1.26±0.15
1.2±0.1
1.27±0.1
1.5 max
0.5±0.1
2.7 max
0.76 ±0.1
2.54 ±0.5
2.54 ±0.5
TO–220AB
SC–46
—
Hitachi Code
EIAJ
JEDEC
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Taiwan)
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
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Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
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Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
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Telex: 40815 HITEC HX
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Electronic Components Group.
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Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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