GT15J331 [TOSHIBA]
High Power Switching Applications Motor Control Applications; 大功率开关应用电机控制应用
| 型号： | GT15J331 |
| 厂家： | 
TOSHIBA |
| 描述： | High Power Switching Applications Motor Control Applications |
| 文件： | 总7页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High Power Switching Applications
Motor Control Applications
Unit: mm
·
·
·
·
·
The 4th Generation
Enhancement-Mode
High Speed: t = 0.10 µs (typ.)
f
Low Saturation Voltage: V
FRD included between Emitter and collector.
= 1.75 V (typ.)
CE (sat)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
600
±20
15
V
V
CES
GES
DC
I
C
Collector current
1 ms
A
JEDEC
―
―
I
30
CP
JEITA
DC
I
15
A
F
Emitter-collector forward
current
TOSHIBA
Weight: 1.5 g
2-10S1C
1 ms
I
30
W
FM
Collector power dissipation
P
70
W
C
(Tc = 25°C)
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
-55~150
stg
Equivalent Circuit
Collector
Gate
Emitter
JEDEC
―
―
JEITA
TOSHIBA
Weight: 1.4 g
2-10S2C
1
2002-01-18
GT15J331
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
I
V
V
= ±20 V, V = 0
¾
¾
¾
¾
±500
1.0
7.5
2.3
¾
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
= 600 V, V
= 0
CES
GE
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
V
I
I
= 1.5 mA, V = 5 V
4.5
¾
¾
GE (OFF)
C
C
CE
V
= 15 A, V
= 15 V
GE
1.75
2400
V
CE (sat)
C
ies
V
= 20 V, V = 0, f = 1 MHz
GE
¾
pF
CE
Rise time
t
¾
¾
¾
0.04
0.22
0.10
¾
¾
r
Inductive Load
Turn-on time
t
V
V
= 300 V, I = 15 A
C
on
CC
GG
Switching time
ms
= 15 V, R = 43 W
G
Fall time
t
0.23
f
(Note1)
Turn-off time
Peak forward voltage
t
¾
¾
¾
¾
¾
0.37
¾
¾
off
V
I
I
= 15 A, V = 0
GE
2.0
V
F
F
F
Reverse recovery time
t
= 15 A, di/dt = -100 A/ms
¾
200
1.79
3.45
ns
rr
Thermal resistance (IGBT)
Thermal resistance (Diode)
R
R
¾
¾
°C/W
°C/W
th (j-c)
th (j-c)
¾
¾
Note1: Switching time measurement circuit and input/output waveforms
V
GE
90%
10%
10%
0
0
-V
GE
I
C
L
I
V
CC
C
90%
10%
90%
10%
R
G
V
CE
V
10%
CE
t
t
t
r
d (off)
d (on)
t
f
t
t
on
off
Note2: Switching loss measurement waveforms
V
GE
90%
10%
0
0
I
C
V
5%
CE
E
E
on
off
2
2002-01-18
GT15J331
I
– V
V
– V
CE GE
C
CE
50
40
20
16
12
8
Common emitter
Tc = -40°C
Common emitter
Tc = 25°C
10
15
20
30
30
20
15
9
4
10
0
I
= 6 A
C
V
= 8 V
GE
0
0
1
2
3
4
5
20
20
0
4
8
12
16
20
Collector-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
CE
GE
V
– V
V
– V
CE GE
CE
GE
20
16
12
8
20
16
12
8
Common emitter
Tc = 25°C
Common emitter
Tc = 125°C
30
30
15
15
4
4
I
= 6 A
I
= 6 A
C
C
0
0
0
4
8
12
16
0
4
8
12
16
20
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
I
– V
V – Tc
CE (sat)
C
GE
4
3
2
1
0
30
20
10
0
Common emitter
= 5 V
Common emitter
= 15 V
V
CE
V
GE
30 A
15 A
I
= 6 A
C
-40
Tc = 125°C
25
0
4
8
12
16
-60
-20
20
60
100
140
Gate-emitter voltage
V
(V)
Case temperature Tc (°C)
GE
3
2002-01-18
GT15J331
Switching time
t
, t – R
r
Switching time t , t – I
on r C
on
G
3
1
3
Common emitter
Common emitter
V
V
= 300 V
CC
V
V
= 300 V
= 15 V
= 15 A
CC
GG
= 15 V
= 43 W
GG
1
R
G
I
C
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
0.5
0.3
0.5
0.3
t
on
t
on
0.1
0.1
0.05
0.03
0.05
0.03
t
r
t
r
0.01
0.01
0
0
0
3
6
9
15
1
3
10
30
100
300
1000
1000
1000
12
Gate resistance
R
(9)
Collector current
I
(A)
G
C
Switching time
t
, t – R
f
Switching time
t
, t – I
f C
off
G
off
3
1
3
1
t
off
0.5
0.3
0.5
0.3
t
off
t
f
t
f
0.1
0.1
Common emitter
Common emitter
0.05
0.03
0.05
0.03
V
V
= 300 V
= 15 V
CC
GG
V
= 300 V
= 15 V
CC
V
GG
C
R
= 43 W
G
I
= 15 A
: Tc = 25°C
: Tc = 25°C
: Tc = 125°C
3
: Tc = 125°C
0.01
0.01
3
6
9
15
1
10
30
100
300
12
Collector current
I
C
(A)
Gate resistance
R
(9)
G
Switching loss
E
, E – R
on off
Switching loss
E , E – I
on off C
G
10
10
1
Common emitter
Common emitter
V
V
R
= 300 V
= 15 V
V
V
C
= 300 V
= 15 V
CC
GG
CC
GG
3
1
= 43 W
I
= 15 A
G
: Tc = 25°C
: Tc = 25°C
: Tc = 125°C
: Tc = 125°C
Note2
Note2
Eon
E
on
0.3
0.1
0.1
0.01
E
off
E
off
0.03
1
3
10
30
100
(9)
300
3
6
9
15
12
Gate resistance
R
Collector current
I
C
(A)
G
4
2002-01-18
GT15J331
C – V
V
, V
CE GE
– Q
G
CE
3000
1000
500
400
20
16
C
ies
Common emitter
= 20 W
Tc = 25°C
R
L
300
100
300
200
12
8
300
200
V
= 100 V
CE
C
oes
30
10
3
C
res
Common emitter
= 0
f = 1 MHz
Tc = 25°C
4
0
100
0
V
GE
1
3
10
30
100
300
1000 3000
(V)
0
10
20
30
40
50
(nC)
60
70
Collector-emitter voltage
V
Gate charge
Q
G
CE
I
- V
t , I - IF
rr rr
F
F
30
25
20
15
10
5
100
10
1
1000
Common collector
di/dt = -100 A/mS
Common collector
V = 0
GE
V
GE
= 0
: Tc = 25°C
: Tc = 125°C
100
t
I
rr
rr
Tc = 125°C
25
-40
0
10
15
0
0.4
0.8
Forward voltage
1.2
V
1.6
2.0
0
3
6
9
12
(V)
Forward current
I
F
(A)
F
Safe operating area
Reverse bias SOA
50
30
50
30
I
max (pulse)*
C
50 ms*
10 ms*
10
10
I
max
C
(continuous)
5
3
5
3
100 ms*
DC
operation
1 ms*
1
1
*:Single
0.5
0.3
0.5
0.3
nonrepetitive pulse
<
T
V
R
125°C
= 15 V
= 43 W
=
j
Tc = 25°C
GE
G
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
3
10
30
100
300
(V)
1000
1
3
10
30
100
300
1000
Collector-emitter voltage
V
Collector-emitter voltage
V
(V)
CE
CE
5
2002-01-18
GT15J331
R
– t
th (t)
w
2
1
0
1
2
3
10
10
Tc = 25°C
FRD
10
IGBT
-
10
-
-
-
10
10
10
4
5
-
4
-
3
-
2
-
1
-
0
1
2
10
10
10
10
10
10
(s)
10
10
Pulse width
t
w
6
2002-01-18
GT15J331
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
7
2002-01-18
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