GT15N101 [TOSHIBA]
TRANSISTOR 15 A, 1000 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor;
| 型号： | GT15N101 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 15 A, 1000 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor 局域网 电动机控制 栅 双极性晶体管 开关 |
| 文件： | 总15页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discre te IGBTs
PRODUCT GUIDE
Features and Structure
Low carrier accumulation, excellent frequency and switching characteristics
Large forward-bias and reverse-bias safe operating areas (FBSOA and RBSOA), high damage resistance
MOSFET-like high input impedance characteristics enable voltage drive
•
•
•
Features
Rated at 1500 V and 80 A, Toshiba discrete insulated gate bipolar transistors (IGBTs) are excellent as power
converters in such diverse applications as motor drives, uninterruptible power supply (UPS) units and induction
heaters. Toshiba IGBTs help to make equipment efficient reliable and compact.
Some features of Toshiba IGBTs are:
(1) High speeds
(2) Low ON-voltage
(3) High-efficiency diode
(4) Enhancement-Mode
(5) A variety of package types is available
Construction
Toshiba IGBTs have a basic four-layer structure with a P+ substrate (collector electrode) added to an N-channel
MOSFET drain (N+ buffer). To avoid IGBT failure, the base of the PNP transistor is connected directly to the
NPN transistor, thus minimizing circuit operation. This is shown in the equivalent circuit diagram below.
Structure
Equivalent Circuit
C
E
AI
G
N+
N+ N+
P
P
P
I
IGBT
P+
N—
C
C
G
N+
P+
I
MOS
E
C
RN-(MOD)
RN-(MOD)
AD
ETAL
G
G
ITTER M
EM
GATE METAL
GATE BONDING P
P
+
INSULATOR
P+
P
+
N+
N
N
POLY SILICON
N+
P+
+
+
P
+
N+
P
E
E
N+
P
+
N+
N+
P
N+
L
A
P
+
T
E
r M
llecto
o
C
3
IGBT Engineering Advances
2.
Power MOSFETs have long provided
both high-speed and high-input
impedance. However, various
disadvantages such as increased
resistance with increased breakdown
voltage, as well as difficulties handling
high breakdown voltages and high
currents, are also associated with
MOSFETs.
Gate Process
Generation
Plane
Trench
2.5 generation 3 generation
Emitter
Gate
Emitter
Gate
+
+
N
N
+
+
P
P
Structure
-
-
N
N
+
+
N
N
+
+
P
P
The cross-section of the IGBT on the
previous page shows how IGBT
resistance is reduced by injecting holes
into the N– layer from the P+ substrate
collector to change the conductivity.
Collector
Collector
VCE(sat)(@600 V)
2.5 V Typ.
1.00
2.1 V Typ.
(1.6 V Typ.)
~900 V
0.43
0.75
0.06
–
Cell Size
1200 V
1.00
Toshiba have miniaturized unit cells and
optimized wafers to decrease VCE(sat)
switching loss. The following data
demonstrates the progress made thus
far:
Trade-Off Characteristics Evolution (VCES = 900 V Type)
3.4
Changes in
Chip Size
2.5 Generation(GT60M104)
3.2
3
100
2.5th-generation IGBTs (VCE(sat) = 2.5V Type)
3rd-generation IGBTs (VCE(sat) = 2.3V Type)
Trench IGBTs (VCE(sat) = 2.1V Type)
2.8
2.6
2.4
2.2
2
3 Generation(GT60M301)
75
In addition to wafer optimization,
Toshiba are applying trench gater
technology and developing improved
lifetime control to optimize the VCE(sat)
versus switching speed trade-off.
Trench(GT60M303)
35
Toshiba is also working on an intelligent
power device (IPD) which uses other
peripheral units such as driver circuits
and protection circuits.
1.8
0.12
0.2
0.28
0.36
tf (µs)
0.44
0.52
IPD
Establishment of the best life
time control
Improvement of Wafer
Fourth Generation
(Trench Gate Structure)
Third Generation
(products become minutely)
Second Generation
(Improvement of pattern and wafer)
’94
’95 ’96
’97
’98
’99
4
Discrete IGBT Line-up
IGBTs for industrial Inverters
Collector Current Ic(A)
Collector-Emitter
Voltage VCES(V)
50A
30A
25A
20A
15A
10A
8A
5A
GT20J301
GT20J101
GT20J311
GT15J301
GT15J311
GT15J101
GT15J102
GT15J103
GT10J301
GT10J311
GT10J303
GT10J312
GT8J101
GT8J102
GT5J301
GT5J311
GT50J301
GT50J102
GT30J301
GT30J101
GT30J311
GT25J101
600V
GT25J102
GT25Q301
GT25Q101
GT25Q102
GT15Q301
GT15Q101
GT15Q102
GT15Q311
GT10Q301
GT10Q101
GT8Q101
GT8Q102
1200V
IGBTs for microwave ovens, rice cockers and induction heaters
Collector-Emitter Voltage VCES(A)
Collector Current
Built-in FRD
Ic(A)
1500V
900V (1000V)
600V
400V
GT80J101A
80A
60A
Under development
(GT60N321
GT60M303
GT60M302
GT60M301
GT60M104
)
TO-3P(LH)
TO-3P(N)
TO-3P(N)IS
TO-3PSM
TO-220(NIS)
TO-220 FL/SM
TO-220AB
DP
GT50J322
GT30J322
GT50G321
GT40G121
50A
40A
GT40T301
GT40T101
GT40M301
GT40M101
30A
15A
GT15M321
IGBTs for strobes
Gate Drive minimum Voltage
V
GE(V)
Collector Peak
Current Icp(A)
4V
4.5V
12V
20V
GT25G101
GT15G101
170A
GT8G121
GT8G103
GT5G103
GT25G102
150A
130A
GT5G102
GT20G102
GT10G101
GT20G101
ProductNumberFormat
Table 1
Mark Voltage (V) Mark Voltage (V)
(Example)
GT 60 M 3 03 A
C
D
E
F
G
H
J
150
200
250
300
400
500
600
700
800
M
N
P
Q
R
S
T
900
Version
1000
1100
1200
1300
1400
1500
1600
1700
Type number
1: N-channel
2: P-channel
3: N-channel with built-in
flywheel diode
Withstand voltage rating (see Table 1)
Collector current rating (DC)
Discrete IGBT
K
L
U
V
5
Characteristics
1. Industrial Inverters
Discrete IGBTs are used in a wide range of high-frequency switching applications,
ranging from industrial inverters to home appliances.
General-Purpose Inverters
Inverter Air Conditioners
Inverter Washing Maschines
UPS
PL
PL
Output
Rectifier circuit
Inverter
Control
Input
CB
6
Characteristics
The following section discusses the characteristics of third-generation IGBTs which are used for high-speed switching. The
GT50J301, whoes characteristic values are typical of those for this class of IGBT, is used as a benchmark for comparison.
VCE(sat) vs. tf Trade-off
Low VCE(sat)
4.0
First-Generation IGBT
Second-Generation IGBT
3.5
A miniaturization process reduces the
VCE(sat) level and the amount of heat
3.0
2.5
2.0
1.5
1.0
0.5
0
generated during operation.
GT50J301
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
@ VCC = 300 V, IC = 50 A
tf (µs)
V
GE = ± 15 V, RG = 24 Ω
Reverse-Bias Safe Operating Area
Wide R.B.S.O.A
300
100
Third-generation IGBTs are
guaranteed to have a wide reverse-
bias safe operating area (RBSOA).
This counters the effect of surge
voltages which can occur during
switching.
50
30
GT50J301
10
Second-Generation IGBT
MOSFET (500 V/50 A)
5
3
1
@
VGE
RG
Tj
= ± 15 V
24 Ω
0.5
0.3
0.1
=
= 125 °C
0
100
200
300
400
500
600
700
Collector-Emitter Voltage VCE(V)
Turn-on Waveform
Low Noise & Low trr
VCE
: 50 V / div
IC : 20 A / div
: 100ns / div
A built-in diode provides fast and
smooth reverse recovery (time) while
generating less noise and heat.
t
VCE
0 v
@
Tj
TCC
VGE
RG
=
25°C
IC
= 300 V
=
=
+
15 V
- 5 V
0 A
24 Ω
7
Characteristics
As shown below, third-generation IGBT is low-loss and low-noise when it use for inverter applications because of high-
speed switching time, Low-saturation voltage and high-efficiency diodes.
Saturation voltage does not rise, even at high
temperatures.
The internal diode recovers smoothly. Surging
is minimized.
IC - VCE
Turn-on waveform
50
VCE
GT50J301
MOSFET
MOSFET
40
30
0 V
@VGE
= 15 V
20
10
0
IC
GT50J301:
Tj
Tj
= 25°C
= 125°C
Tj
VCC
=
=
=
3125°C
@
MOSFET(500V/50A):
300 V
+ 15 V
Tch
V
GE
= 25°C
GT50J301
-
5 V
(
300 A/µs @50 A
)
Tch
dI
C
/dtr
= 125°C
0 A
0
2
4
6
8
10
VCE: 100 V / div
IC: 10 A / div
t: 0.1µs/div,
Voltage between Collector and Emitter VCE (V)
Simulation data of inverter application
Power loss-fc
80
GT50J301:
@fo =
50Hz
Tj =
Tj =
25¡C
125¡C
=
Po 7.5kW
MOSFET (500 V / 50 A) :
Tch
Tch
=
=
25¡C
125¡C
60
40
20
0
0
4
8
12
Carrier Frequency fC (kHz)
16
20
24
8
Second-Generation IGBTs
V
CE(sat)
(V)
tf ( s)
max
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.50
0.50
0.50
0.50
Internal
FRD
VCES
IC
PC
Product No.
Package
Remarks
(V)
(A)
(W)
max
IC (A)
8
8
15
15
15
25
25
8
8
30
50
100
35
70
150
80
100
50
150
200
TO-220(NIS)
TO-220SM
TO-3P(N)
TO-220SM
TO-220SM
TO-3P(N)
TO-3P(N)IS
TO-3P(N)
TO-220SM
TO-3P(N)
TO-3P(L)
GT8J101
GT8J102
8
15
15
15
25
25
8
8
15
25
GT15J101
GT15J102
GT15J103
GT25J101
GT25J102
GT8Q101
GT8Q102
GT15Q101
GT25Q101
600
4
8
15
25
1200
Third-Generation IGBTs with Built-in FRDs, VCES=600V
High capability to withstand breakdown voltage. The line will also include surface-mount devices which enable miniaturization of equipment.
VCE(sat)
max
(V)
tf ( s)
max
VCES
(V)
IC
PC
Product No.
Package
Remarks
(A)
(W)
IC (A)
5
5
5
50
25
30
60
90
80
35
70
130
120
155
145
200
TO-220SM
TO-220(NIS)
TO-220(NIS)
TO-220SM
TO-3P (N)
TO-3P (SM)
TO-220(NIS)
TO-220SM
TO-3P (N)
TO-3P (SM)
TO-3P (N)
TO-3P (SM)
TO-3P (LH)
GT5J311
GT5J301
5
10
10
10
10
15
15
20
20
30
30
50
GT10J303
GT10J312
GT10J301
GT10J311
GT15J301
GT15J311
GT20J301
GT20J311
GT30J301
GT30J311
GT50J301
10
10
10
10
15
15
20
20
30
30
50
600
2.7
0.30
Built-in FRD
Third-Generation IGBTs without Built-in FRDs, VCES=600V
VCE(sat)
(V)
tf ( s)
max
VCES
(V)
IC
PC
Product No.
Package
Remarks
(A)
(W)
max
IC (A)
TO-3P (N)
TO-3P (N)
TO-3P (LH)
20
30
50
130
155
200
20
30
50
*GT20J101
*GT30J101
GT50J102
Under development
600
2.7
0.30
Third-Generation IGBTs with Built-in FRDs, VCES=1200V
VCE(sat)
(V)
tf ( s)
max
VCES
(V)
IC
PC
Product No.
Package
Remarks
(A)
(W)
max
IC (A)
10
15
15
25
140
170
160
200
10
15
15
25
TO-3P (N)
TO-3P (N)
TO-3P (SM)
TO-3P (LH)
GT10Q301
GT15Q301
GT15Q311
GT25Q301
1200
2.7
0.32
New Products
Third-Generation IGBTs without Built-in FRDs, VCES=1200V
VCE(sat)
(V)
tf ( s)
max
VCES
(V)
IC
PC
Product No.
Package
Remarks
(A)
(W)
max
IC (A)
TO-3P (N)
TO-3P (N)
TO-3P (LH)
10
15
25
140
170
200
10
15
25
*GT10Q101
*GT15Q102
*GT25Q102
1200
2.7
0.32
Under development
: Unden development
*
9
Characteristics
2. Microwave Ovens, Rice Cookers and Induction Heaters
Soft-switching circuits (current and voltage resonance type) that
exhibit low switching loss are used in applications such as induction
heaters (IHs) and IH rice cookers and microwave ovens.
Toshiba offers a line of IGBTs with optimally low VCE(sat) and high
switching speed which are especially suited to soft-switching circuits.
Microwave Ovens
IH Rice Cookers
Induction Heaters
AC Input Voltage
100 V to 120 V
Circuit
IGBT Rating
Valtage Resonance
Waveform
VCES = 900 V to 1000 V
IC = 15 A to 60 A
IC
IC
VCE
VCES = 1500 V
IC = 40 A
VCE
Current Resonance
Waveform
200 V to 240 V
VCES = 400 V to 600 V
IC = 30 A to 80 A
IC
IC
VCE
VCE
10
IGBTs and Diodes for Voltage Resonance Circuits (with soft switching)
IGBT
VCE (sat)
max
2.5
(V)
tf ( s)
max
AC Input Voltage
Device
Package
Remarks
V
CES / IC
FRD
V
GE / IC
GT15M321
GT40M101
GT40M301
GT60M301
GT60M302
GT60M303
GT60N321
GT40T101
GT40T301
900 V / 15 A
900 V / 40 A
900 V / 40 A
900 V / 60 A
900 V / 60 A
900 V / 60 A
1000 V / 60 A
1500 V / 40 A
1500 V / 40 A
0.4
0.4
0.4
0.4
0.37
0.4
0.4
0.4
0.4
15 V / 15 A
15 V / 40 A
15 V / 40 A
15 V / 60 A
15 V / 60 A
15 V / 60 A
15 V / 60 A
15 V / 40 A
15 V / 40 A
TO-3P(N)IS
TO-3P(N)IS
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
New products
3.4
3.4
100 V to 120 V
200 V to 240 V
3.4
3.3
2.7
New products
New products
2.8
5.0
5.0
High-Speed Rectifiers (FRDs)
VFM
max
2.0
(V)
IF
Cj (pF) tf ( s)
AC Input Voltage
Device
Package
Remarks
V
RRM / IFSM
typ.
30
max
3.0
3.0
2.0
3.5
100 V to 120 V
200 V to 240 V
100 V to 240 V
S5J12
S5J25
S5J53
S5783F
900 V / 120 A
1500 V / 120 A
1500 V / 120 A
900 V / 250 A
15 A
30 A
30 A
60 A
TO-220(NIS)
TO-3P (N)
75
2.5
75
2.5
TO-220(NIS)
TO-3P(N)IS
60
1.6
IGBTs and Diodes for Current Resonance Circuits (with soft switching)
IGBT
VCE (sat)
max
3.0
(V)
tf ( s)
max
AC Input Voltage
Device
Package
Remarks
VCES / IC
FRD
V
GE / IC
GT80J101A
GT50G321
GT50J102
GT50J301
GT50J322
GT40G121
GT30J322
600 V / 80 A
400 V / 50 A
600 V / 50 A
600 V / 50 A
600 V / 50 A
400 V / 40 A
600 V / 30 A
0.40
0.40
0.30
0.30
0.40
0.40
0.40
15 V / 80 A
15 V / 60 A
15 V / 50 A
15 V / 50 A
15 V / 50 A
15 V / 60 A
15 V / 50 A
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-3P (LH)
TO-220AB
New products
2.5
2.7
200 V to 240 V
2.7
2.8
New products
2.5
2.8
TO-3P(N)IS
High-Efficiency Diodes (HEDs)
VFM
max
*2.0
*2.0
(V)
IF
Cj (pF) trr (ns)
AC Input Voltage
Device
Package
Remarks
VRRM / IFSM
typ.
*50
*70
max
*50
20JL2C41
30JL2C41
600 V / *100 A
600 V / *150 A
*10 A
*15 A
TO-3P (N)
TO-3P (N)
200 V to 240 V
*50
*
Rating indicates only for a single stack device.
11
Characteristics
3. Strobes
Thyristors previously used in strobe control circuits are today
increasingly being replaced by IGBTs which have the following
advantages.
As a voltage-controlled device, the IGBT requires few drive
circuit components.
The small circuits possible with IGBTs fit compactly into
small camera bodies.
Strobe flash IGBTs are capable of switching large currents.
Single-Lens
Reflex Camera
Dedicated Strobe
Compact Camera
X
e
D-D
Con.
CM
Replacing thyristors with an
IGBT simplifies the circuit and
reduces parts count.
Thyristors
X
e
D-D
Con.
CM
IGBT
12
4-V to 4.5 V Gate Drive Series
The IGBT can be operated using a 4·5-V gate drive voltage.
A gate drive power supply can be used as the common 5-V internal power supply in a camera, enabling the power
supply circuitry to be simplified.
To protect against insulator layer of the gates, zener diodes are included between the gate and emitter.
Internal Power
Supply for Camera 5-V line
D-D
Con.
6V
Driver
Driver
Gate Drive Voltage
12-V to 20-V circuit
Gate Drive Voltage
5-V circuit
VCE
(V)
(sat)
Product No.
VCES / ICP
PC
Package
Remarks
(W)
(W)
(W)
max
V
GE / IC
GT5G103
GT8G103
GT8G121
400 V / 130 A
400 V / 150 A
400 V / 150 A
8
8
7
4.5 V / 130 A
4.5 V / 150 A
4.0 V / 150 A
20
20
20
DP
DP
DP
New Products
12-V Gate Drive Series
VCE
(V)
(sat)
Product No.
VCES / ICP
PC
Package
Remarks
max
VGE / IC
400 V / 130 A
400 V / 130 A
400 V / 150 A
8
8
8
12 V / 130 A
12 V / 130 A
12 V / 150 A
20
60
75
DP
GT5G102
GT20G102
GT25G102
TO-220FL
TO-220FL
20-V Gate Drive Series
VCE
(V)
(sat)
Product No.
VCES / ICP
PC
Package
Remarks
max
VGE / IC
GT10G101
GT20G101
GT15G101
GT25G101
400V / 130 A
400V / 130 A
400V / 170 A
400V / 170 A
8
8
8
8
20V / 130 A
20V / 130 A
20V / 170 A
20V / 170 A
30
60
40
60
TO-220(NIS)
TO-220FL
TO-220(NIS)
TO-220FL
13
Package Dimensions
unit: mm
DP (Straight Lead) DP (Lead Forming)
TO-220 (NIS)
TO-220AB
6.8 max
3.6 – 0.2
10.3 max
1.32
10 – 0.3
2.7 – 0.2
3.2 – 0.2
6.8 max
5.2 – 0.2
5.2 – 0.2
0.6 max
0.6 max
0.6 – 0.15
0.95 max
1.1
1.1
0.95 max
0.6 – 0.15
0.6 – 0.15
0.6 max
1.3
0.6 max
0.75 – 0.15
2.54 – 0.25
2.3 2.3
1.6 – 0.2
0.76
2.54 – 0.25
2.6
0.5
2.3 2.3
1
2
3
2.54 – 0.25
2.54 – 0.25
1
2 3
1
2
3
1
2 3
1. Gate
1. Gate
1. Gate
1. Gate
2. Collector
3. Emitter
2. Collector
3. Emitter
2. Collector
3. Emitter
2. Collector
3. Emitter
TO-220FL
TO-220SM
TO-3P (N)
TO-3P (N) IS
10.3 max
15.9 max
3.2 – 0.2
15.8– 0.5
3.6 – 0.2
3.5
10.3 max
1.32
1.32
0.1
2.0
1.6 max
0.76
2.0 – 0.3
+ 0.3
+ 0.3
0.76
2.54
1.0 0.25
1.0 0.25
2.54
5.45 – 0.2
5.45 – 0.2
5.45 – 0.2
5.45 – 0.2
+ 0.2
2.54 – 0.25
2.54 – 0.25
1
2
3
3.15 0.1
1
2
3
1
2
3
1
2
3
1. Gate
1. Gate
1. Gate
1. Gate
2. Collector
3. Emitter
2. Collector
3. Emitter
2. Collector
3. Emitter
2. Collector
3. Emitter
TO-3P (SM)
TO-3P (L)
TO-3P (LH)
15.9 max
11.0
20.5 max
3.3 – 0.2
20.5 max
3.3 – 0.2
1.5
1.5
0.1
2.5
3.0
2.5
3.0
2.0
5.45 5.45
0.6
1.2
+
0.3
+ 2.5
1.0 0.25
1.0 0.25
5.45 – 0.15
5.45 – 0.15
5.45 – 0.15
5.45 – 0.15
1
2
3
1
2
3
1
2
3
1. Gate
1. Gate
1. Gate
2. Collector
3. Emitter
2. Collector
3. Emitter
2. Collector
3. Emitter
14
Final-phaseandDiscontinuedProducts
The following products are in stock but are being phased out of production.
Substitute products are shown which can be used in their place.
Electrical Characteristics
Electrical Characteristics
Substitute
Product
Product No.
Package
Package
tf ( s)
max
tf ( s)
max
VCES
(V)
IC
(A) max
130
VCE (sat) (V)
VCES
(V)
IC
(A) max
130
VCE (sat) (V)
*
*
2.00 DP
GT5G101
GT8G101
GT8G102
GT8N101
GT15N101
GT25H101
GT50G101
GT50G102
GT50J101
GT50L101
GT50M101
GT50Q101
GT50S101
GT50T101
GT60J101
GT60M101
GT60M102
GT60M103
400
400
400
1000
1000
500
400
400
600
800
900
1200
1400
1500
600
900
900
900
400
8.0
8.0
8.0
4.0
4.0
4.0
8.0
8.0
4.0
4.0
5.0
4.0
7.2
5.5
4.0
4.0
3.8
3.6
8.0
1.70 NPM
GT5G102
GT5G103
GT8G121
GT8Q101
GT15Q101
GT25J101
GT10G101
GT10G101
GT50J102
GT60M303
GT60M303
GT40T301
GT40T301
GT40T301
GT50J102
400
400
400
1200
1200
600
400
400
600
900
900
1500
1500
1500
600
900
900
900
400
8.0
8.0
8.0
4.0
4.0
4.0
8.0
8.0
2.7
3.4
3.4
5.0
5.0
5.0
2.7
3.4
3.4
3.4
8.0
*
*
2.00 DP
130
150
8
2.00 NPM
130
150
8
*
*
2.00 NPM
2.00 DP
1.00 TO-3P (N)
1.00 TO-3P (N)
1.00 TO-3P (N)
3.00 TO-3P (N)
3.00 TO-3P (N)
3.35 TO-3P (L)
0.70 TO-3P (L)
0.40 TO-3P (LH)
0.50 IH Package
0.38 IH Package
0.40 IH Package
0.50 TO-3P (N)
0.50 TO-3P (N)
0.35 TO-3P (N)
6.00 TO-220 (NIS)
6.00 TO-220 (NIS)
0.30 TO-3P (LH)
0.40 TO-3P (LH)
0.40 TO-3P (LH)
0.40 TO-3P (LH)
0.40 TO-3P (LH)
0.40 TO-3P (LH)
15
15
25
25
100
100
50
130
130
50
50
60
50
60
50
40
50
40
50
40
60
0.35
0.70
0.40
0.40
3.00
TO-3P (L)
TO-3P (LH) GT60M303
TO-3P (L) GT60M303
TO-3P (LH) GT60M303
TO-3P (L) GT15G101
50
0.35
TO-3P (LH)
60
60
0.40 TO-3P (LH)
0.40 TO-3P (LH)
0.40 TO-3P (LH)
6.00 TO-220 (NIS)
60
60
60
60
GT75G101
150
170
Typical value
:
*
15
OVERSEAS SUBSIDIARIES AND AFFILIATES
000906(D)
Toshiba Electronics Europe GmbH
Toshiba Electronics Asia, Ltd.
Toshiba America
Electronic Components, Inc.
Düsseldorf Head Office
Hansaallee 181, D-40549 Düsseldorf
Germany
Hong Kong Head Office
Level 11, Top Glory Insurance Building, Grand Century
Place, No.193, Prince Edward Road West,
Mong Kok, Kowloon, Hong Kong
Headquarters-Irvine, CA
9775 Toledo Way, Irvine, CA 92618, U.S.A.
Tel: (0211)5296-0 Fax: (0211)5296-400
Tel: (949)455-2000 Fax: (949)859-3963
MünchenOffice
Tel: 2375-6111 Fax: 2375-0969
Boulder, CO
Büro München Hofmannstrasse 52,
D-81378, München, Germany
Tel: (089)748595-0 Fax: (089)748595-42
Beijing Office
3100ArapahoeAvenue,Ste.500,
Boulder, CO 80303, U.S.A.
Tel: (303)442-3801 Fax: (303)442-7216
Rm 714, Beijing Fortune Building,
No.5 Dong San Huan Bei-Lu, Chao Yang District,
Beijing, 100004, China
Toshiba Electronics France SARL
Immeuble Robert Schumann 3 Rue de Rome,
F-93561, Rosny-Sous-Bois, Cedex, France
Tel: (1)48-12-48-12 Fax: (1)48-94-51-15
BoyntonBeach,FL(Orlando)
11924 W. Forest Hill Blvd., Ste. 22-337,
BoyntonBeach, FL33414, U.S.A.
Tel: (010)6590-8795 Fax: (010)6590-8791
ChengduOffice
Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road,
XinhuaAvenue, Chengdu, 610017, China
Tel: (028)675-1773 Fax: (028)675-1065
Tel: (561)374-6193 Fax: (561)374-6194
Toshiba Electronics Italiana S.R.L.
Centro Direzionale Colleoni
Deerfield, IL(Chicago)
One Pkwy., North, Suite 500, Deerfield,
Palazzo Perseo Ingr. 2-Piano 6,
Via Paracelso n.12,
Shenzhen Office
IL60015-2547,U.S.A.
Rm 3010-3012, Office Tower Shun Hing Square,
Di Wang Commercial Centre, 333 ShenNan
EastRoad, Shenzhen, 518008, China
Tel: (0755)246-1582 Fax: (0755)246-1581
Tel: (847)945-1500 Fax: (847)945-1044
1-20041 Agrate Brianza Milan, Italy
Tel:(039)68701 Fax:(039)6870205
Duluth,GA(Atlanta)
3700 Crestwood Parkway, Ste. 460,
Toshiba Electronics España, S.A.
Duluth, GA 30096, U.S.A.
Parque Empresarial San Fernando Edificio Europa,
a
Tel: (770)931-3363 Fax: (770)931-7602
1
Planta, ES-28831 Madrid, Spain
Toshiba Electronics Korea Corporation
Tel: (91)660-6700 Fax:(91)660-6799
Edison, NJ
2035 Lincoln Hwy. Ste. #3000, Edison
Seoul Head Office
14/F, KEC B/D, 257-7 Yangjae-Dong,
Toshiba Electronics(UK) Limited
Riverside Way, Camberley Surrey,
GU15 3YA, U.K.
NJ 08817, U.S.A.
Seocho-ku, Seoul, Korea
Tel: (732)248-8070 Fax: (732)248-8030
Tel: (02)589-4334 Fax: (02)589-4302
Tel: (01276)69-4600 Fax: (01276)69-4800
OrangeCounty, CA
2 Venture Plaza, #500 Irvine, CA 92618, U.S.A.
Gumi Office
Toshiba Electronics Scandinavia AB
Gustavslundsvägen12, 2ndFloor
S-161 15 Bromma, Sweden
6/F, Ssangyong Investment Securities B/D,
56 Songjung-Dong, Gumi City
Kyeongbuk,Korea
Tel: (949)453-0224 Fax: (949)453-0125
Portland, OR
Tel: (08)704-0900 Fax: (08)80-8459
Tel:(82)54-456-7613 Fax: (82)54-456-7617
1700 NW 167th Place, #240,
Beaverton, OR 97006, U.S.A.
Tel: (503)629-0818 Fax: (503)629-0827
Toshiba Electronics Asia
(Singapore) Pte. Ltd.
Singapore Head Office
438BAlexandraRoad, #06-08/12Alexandra
Technopark,Singapore119968
Tel: (278)5252 Fax: (271)5155
Toshiba Technology Development
(Shanghai) Co., Ltd.
23F, ShanghaiSenmaoInternationalBuilding, 101
Yin Cheng East Road, Pudong New Area, Shanghai,
200120,China
Richardson, TX(Dallas)
777 East Campbell Rd., Suite 650, Richardson,
TX 75081, U.S.A.
Tel: (972)480-0470 Fax: (972)235-4114
Tel: (021)6841-0666 Fax: (021)6841-5002
BangkokOffice
San Jose Engineering Center, CA
1060 Rincon Circle, San Jose, CA 95131, U.S.A.
Tel:(408)526-2400 Fax:(408)526-2410
135 Moo 5 Bangkadi Industrial Park, Tivanon Rd.,
BangkadiAmphurMuangPathumthani, Bangkok, 12000,
Thailand
Tsurong Xiamen Xiangyu Trading
Co., Ltd.
8N, Xiamen SEZ Bonded Goods Market Building,
Xiamen, Fujian, 361006, China
Tel: (0592)562-3798 Fax: (0592)562-3799
Wakefield,MA(Boston)
401 Edgewater Place, Suite #360, Wakefield,
Tel: (02)501-1635 Fax: (02)501-1638
Toshiba Electronics Trading
(Malaysia)Sdn. Bhd.
Kuala Lumpur Head Office
Suite W1203, Wisma Consplant, No.2,
Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,
Selangor Darul Ehsan, Malaysia
MA01880-6229, U.S.A.
Tel: (781)224-0074 Fax: (781)224-1095
Toshiba Electronics Taiwan
Corporation
Taipei Head Office
Toshiba Do Brasil S.A.
17F, Union Enterprise Plaza Bldg. 109
Min Sheng East Rd., Section 3, 0446 Taipei,
Taiwan
Electronic Components Div.
Tel: (3)731-6311 Fax: (3)731-6307
Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga
09850-550-Sao Bernardo do campo - SP
Tel: (011)7689-7171 Fax: (011)7689-7189
Penang Office
Tel: (02)514-9988 Fax: (02)514-7892
Suite 13-1, 13th Floor, Menard Penang Garden,
42-A, Jalan Sultan Ahmad Shah,
100 50 Penang, Malaysia
KaohsiungOffice
16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd.,
80027,Kaohsiung,Taiwan
Tel: 4-226-8523 Fax: 4-226-8515
Tel: (07)222-0826 Fax: (07)223-0046
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati,
Manila, Philippines
Tel: (02)750-5510 Fax: (02)750-5511
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the
responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for
the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of
human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used
within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind
the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor
Reliability Handbook" etc..
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).
These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or
reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage
include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,
combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed
in this document shall be made at the customer’s own risk.
Electronic Devices Sales & Marketing Group
1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan
Tel: (03)3457-3405 Fax: (03)5444-9431
Website: http://doc.semicon.toshiba.co.jp/indexus.htm
©2000TOSHIBACORPORATION
Printed in Japan
相关型号：
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