GT15Q102 [TOSHIBA]
High Power Switching Applications; 高功率开关应用
| 型号： | GT15Q102 |
| 厂家： | 
TOSHIBA |
| 描述： | High Power Switching Applications |
| 文件： | 总6页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT15Q102
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
Unit: mm
·
·
·
·
The 3rd Generation
Enhancement-Mode
High Speed: t = 0.32 µs (max)
f
Low Saturation Voltage: V
= 2.7 V (max)
CE (sat)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
1200
±20
15
V
V
CES
GES
DC
Collector current
I
C
A
1 ms
I
30
CP
Collector power dissipation
(Tc = 25°C)
P
170
W
C
Junction temperature
Storage temperature range
T
150
°C
°C
j
JEDEC
―
―
T
-55~150
stg
JEITA
TOSHIBA
Weight: 4.6 g
2-16C1C
1
2002-01-18
GT15Q102
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±20 V, V = 0
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
4.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
±500
1.0
7.0
2.7
¾
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
= 1200 V, V
= 0
GE
CES
V
I
I
= 1.5 mA, V = 5 V
¾
GE (OFF)
C
C
CE
V
= 15 A, V
= 15 V
GE
2.1
850
0.05
0.12
0.16
0.56
¾
V
CE (sat)
C
ies
V
= 50 V, V = 0, f = 1 MHz
GE
pF
CE
Rise time
t
¾
Inductive Load
r
Turn-on time
Switching time
t
V
V
= 600 V, I = 15 A
¾
on
CC
GG
C
ms
= ±15 V, R = 56 W
Fall time
t
f
0.32
¾
G
(Note1)
Turn-off time
t
off
Thermal resistance
R
¾
0.74
°C/W
th (j-c)
Note1: Switching time measurement circuit and input/output waveforms
V
GE
90%
GT15Q301
GE
10%
10%
0
0
-V
I
C
I
L
V
CC
C
90%
10%
90%
10%
R
G
V
CE
V
10%
CE
t
t
t
r
d (off)
d (on)
t
f
t
t
on
off
Note2: Switching loss measurement waveforms
V
GE
90%
10%
0
0
I
C
V
10%
CE
E
E
on
off
2
2002-01-18
GT15Q102
I
– V
V
– V
CE GE
C
CE
50
40
20
16
12
8
Common emitter
Tc = -40°C
20
15
30
20
10
30
V
GE
= 9 V
15
4
10
0
I
= 6 A
C
Common emitter
Tc = 25°C
0
0
1
2
3
4
5
20
20
0
4
8
12
16
20
Collector-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
CE
GE
V
– V
V
– V
CE GE
CE
GE
20
16
20
16
12
8
Common emitter
Tc = 25°C
Common emitter
Tc = 125°C
12
8
30
30
15
I
= 6 A
15
12
I
= 6 A
C
C
4
4
0
0
0
4
8
16
0
4
8
12
16
20
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
I
– V
V
– Tc
CE (sat)
C
GE
50
40
4
3
2
1
0
Common emitter
= 5 V
30
15
Common emitter
= 15 V
V
CE
V
GE
30
20
I
= 6 A
C
25
10
0
Tc = 125°C
-40
0
4
8
12
16
-60
-20
20
60
100
140
Gate-emitter voltage
V
(V)
Case temperature Tc (°C)
GE
3
2002-01-18
GT15Q102
Switching time
t
, t – R
r
Switching time t , t – I
on r C
on
G
1
1
Common emitter
Common emitter
V
V
C
= 600 V
V
V
= 600 V
CC
GG
CC
GG
= ±15 V
= ±15 V
= 56 W
0.5
0.3
0.5
0.3
I
= 15 A
R
G
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
t
on
t
on
0.1
0.1
t
r
t
0.05
0.03
r
0.05
0.03
0.01
0.01
0
3
5
10
30
50
100
300 500
5
10
15
(A)
20
Gate resistance
R
(9)
Collector current
I
C
G
Switching time
t
, t – R
f
Switching time
t
, t – I
C
off
G
off
f
3
3
1
Common emitter
Common emitter
V
V
= 600 V
= ±15 V
V
V
= 600 V
= ±15 V
= 56 W
CC
CC
GG
GG
I
= 15 A
R
G
C
: Tc = 25°C
: Tc = 25°C
1
t
: Tc = 125°C
: Tc = 125°C
off
t
off
0.5
0.3
0.5
0.3
t
t
f
f
0.1
0.1
0.05
0.05
0
3
5
10
30
50
100
300
5
10
15
(A)
20
Collector current
I
C
Gate resistance
R
(9)
G
Switching loss
E
, E – R
Switching loss
E , E – I
on off C
on off
G
10
10
Common emitter
Common emitter
V
V
= 600 V
= ±15 V
V
V
= 600 V
= ±15 V
= 56 W
CC
GG
CC
GG
5
3
5
3
I
= 15 A
R
G
C
: Tc = 25°C
: Tc = 25°C
: Tc = 125°C
: Tc = 125°C
E
E
on
Note2
Note2
off
1
1
E
off
0.5
0.3
0.5
0.3
E
on
0.1
0.1
3
5
10
30
50
100
(9)
300 500
0
5
10
15
(A)
20
Gate resistance
R
Collector current
I
C
G
4
2002-01-18
GT15Q102
C – V
V
, V
CE GE
– Q
G
CE
3000
1000
1000
800
20
16
Common emitter
= 40 W
Tc = 25°C
R
L
C
ies
300
100
600
400
12
8
400
600
V
CE
= 200 V
Common emitter
= 0
f = 1 MHz
C
oes
V
GE
30
10
4
200
0
Tc = 25°C
C
res
0
1
3
10
30
100
V
300
(V)
1000
0
40
80
120
160
200
Collector-emitter voltage
Gate charge
Q
G
(nC)
CE
Safe operating area
Reverse bias SOA
100
50
30
50
30
I
max (pulsed)*
C
50 ms*
I
max (continuous)
C
10
100 ms*
1 ms*
10 ms*
10
5
3
DC
operation
5
3
*:Single
nonrepetitive pulse
Tc = 25°C
1
1
0.5
<
=
0.5
0.3
T
125°C
Curves must be
derated linearly with
increase in
j
0.3
V
= ±15 V
GE
R
= 56 W
G
temperature.
0.1
0.1
1
3
10
30
100
300
1000 3000
(V)
1
3
10
30
100
300
1000 3000
(V)
Collector-emitter voltage
V
Collector-emitter voltage
V
CE
CE
R
– t
w
th (t)
3
2
1
0
1
2
3
10
10
10
Tc = 25°C
10
-
10
-
-
-
10
10
10
4
5
-
4
-
3
-
2
-
1
-
0
1
2
10
10
10
10
10
10
(s)
10
10
Pulse width
t
w
5
2002-01-18
GT15Q102
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-01-18
相关型号：
©2020 ICPDF网 联系我们和版权申明