GT15Q102_06 [TOSHIBA]
Silicon N Channel IGBT High Power Switching Applications; 硅N沟道IGBT高功率开关应用
| 型号： | GT15Q102_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel IGBT High Power Switching Applications |
| 文件： | 总6页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT15Q102
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
Unit: mm
•
•
•
•
Third-generation IGBT
Enhancement mode type
High speed: t = 0.32 μs (max)
f
Low saturation voltage: V
= 2.7 V (max)
CE (sat)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
1200
±20
15
V
V
CES
GES
DC
I
C
Collector current
A
1 ms
I
30
CP
Collector power dissipation
(Tc = 25°C)
P
170
W
C
Junction temperature
Storage temperature range
T
150
°C
°C
j
JEDEC
―
―
T
stg
−55~150
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
Weight: 4.6 g
2-16C1C
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Marking
TOSHIBA
GT15Q102
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
GT15Q102
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±20 V, V
= 0
⎯
⎯
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
±500
1.0
7.0
2.7
⎯
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
I
= 1200 V, V
= 0
CES
GE
V
I
I
= 1.5 mA, V
= 5 V
⎯
GE (OFF)
C
C
CE
= 15 V
V
= 15 A, V
2.1
V
CE (sat)
GE
= 50 V, V = 0, f = 1 MHz
GE
C
V
850
0.05
0.12
0.16
0.56
⎯
pF
ies
CE
Rise time
t
⎯
Inductive Load
r
Turn-on time
Switching time
t
V
V
= 600 V, I = 15 A
⎯
on
CC
GG
C
μs
= ±15 V, R = 56 Ω
Fall time
t
f
0.32
⎯
G
(Note1)
Turn-off time
t
off
Thermal resistance
R
⎯
0.74
°C/W
th (j-c)
Note1: Switching time measurement circuit and input/output waveforms
V
GE
90%
GT15Q301
GE
10%
10%
0
0
−V
I
C
I
L
V
CC
C
90%
10%
90%
R
G
V
CE
V
10%
10%
CE
t
t
t
r
d (off)
d (on)
t
f
t
t
on
off
Note2: Switching loss measurement waveforms
V
GE
90%
10%
0
0
I
C
V
10%
CE
E
E
on
off
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2006-11-01
GT15Q102
I
– V
V
– V
CE GE
C
CE
50
40
20
16
12
8
Common emitter
Tc = −40°C
20
15
30
20
10
30
V
= 9 V
GE
15
4
10
0
I
= 6 A
C
Common emitter
Tc = 25°C
0
0
0
1
2
3
4
5
20
20
4
8
12
16
20
Collector-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
CE
GE
V
– V
V
– V
CE GE
CE
GE
20
16
20
16
12
8
Common emitter
Common emitter
Tc = 25°C
Tc = 125°C
12
8
30
30
15
I
= 6 A
15
12
I
= 6 A
C
C
4
4
0
0
0
0
4
8
16
4
8
12
16
20
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
GE
(V)
GE
I
C
– V
V – Tc
CE (sat)
GE
50
40
4
3
2
1
0
Common emitter
= 5 V
30
15
Common emitter
= 15 V
V
CE
V
GE
30
20
I
= 6 A
C
25
10
0
Tc = 125°C
−40
0
4
8
12
16
−60
−20
20
60
100
140
Gate-emitter voltage
V
GE
(V)
Case temperature Tc (°C)
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2006-11-01
GT15Q102
Switching time
t
, t – R
r
Switching time
t
, t – I
on C
on
G
r
1
1
Common emitter
Common emitter
V
V
= 600 V
= ±15 V
= 15 A
V
V
R
= 600 V
= ±15 V
= 56 Ω
CC
GG
CC
GG
G
0.5
0.3
0.5
0.3
I
C
: Tc = 25°C
: Tc = 25°C
: Tc = 125°C
: Tc = 125°C
t
on
t
on
0.1
0.1
t
r
t
0.05
0.03
r
0.05
0.03
0.01
0.01
0
3
5
10
30
50
100
300 500
5
10
15
20
Gate resistance
R
G
(Ω)
Collector current
I
C
(A)
Switching time
t
, t – R
f
Switching time
t , t – I
off f C
off
G
3
3
1
Common emitter
Common emitter
V
V
= 600 V
= ±15 V
= 15 A
V
V
R
G
= 600 V
= ±15 V
= 56 Ω
CC
GG
CC
GG
I
C
: Tc = 25°C
: Tc = 25°C
1
t
: Tc = 125°C
: Tc = 125°C
off
t
off
0.5
0.3
0.5
0.3
t
t
f
f
0.1
0.1
0.05
0.05
0
3
5
10
30
50
100
300
5
10
15
20
Collector current
I
C
(A)
Gate resistance
R
G
(Ω)
Switching loss
E
, E – R
on off
Switching loss
E
, E – I
on off
G
C
10
10
Common emitter
Common emitter
V
V
I
= 600 V
= ±15 V
= 15 A
V
V
R
= 600 V
= ±15 V
= 56 Ω
: Tc = 25°C
: Tc = 125°C
CC
GG
C
CC
GG
G
5
3
5
3
: Tc = 25°C
: Tc = 125°C
E
E
on
off
Note2
Note2
1
1
E
0.5
0.3
0.5
0.3
off
E
on
0.1
3
0.1
5
10
30
50
100
300 500
0
5
10
15
20
Gate resistance
R
G
(Ω)
Collector current
I
C
(A)
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2006-11-01
GT15Q102
C – V
V
, V
CE GE
– Q
G
CE
3000
1000
1000
800
20
16
Common emitter
= 40 Ω
R
L
Tc = 25°C
C
ies
300
100
600
400
12
8
400
600
V
= 200 V
CE
Common emitter
= 0
C
oes
V
GE
30
10
4
200
0
f = 1 MHz
Tc = 25°C
C
res
0
200
1
3
10
30
100
V
300
(V)
1000
0
40
80
120
160
Collector-emitter voltage
Gate charge
Q
G
(nC)
CE
Safe operating area
Reverse bias SOA
100
50
30
50
30
I
max (pulsed)*
C
50 μs*
I
max (continuous)
C
10
100 μs*
1 ms*
10 ms*
10
5
3
DC
operation
5
3
*:Single
nonrepetitive pulse
1
1
0.5
Tc = 25°C
<
0.5
0.3
T
125°C
Curves must be
derated linearly with
increase in
j
0.3
V
= ±15 V
= 56 Ω
GE
R
G
temperature.
0.1
1
0.1
1
3
10
30
100
300
1000 3000
3
10
30
100
300
1000 3000
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
R
th (t)
– t
w
3
2
1
0
1
2
3
10
10
10
Tc = 25°C
10
−
10
−
−
−
10
10
10
4
5
4
3
2
1
0
1
2
−
−
−
−
−
10
10
10
10
10
10
10
10
Pulse width
t
(s)
w
5
2006-11-01
GT15Q102
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-01
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