GT15J331(2-10S1C) [TOSHIBA]

TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT, 2-10S1C, TO-220FL, 3 PIN, Insulated Gate BIP Transistor;
GT15J331(2-10S1C)
型号: GT15J331(2-10S1C)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT, 2-10S1C, TO-220FL, 3 PIN, Insulated Gate BIP Transistor

栅 双极性晶体管 功率控制
文件: 总7页 (文件大小:224K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GT15J331  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT15J331  
High-Power Switching Applications  
Unit: mm  
Motor Control Applications  
Fourth-generation IGBT  
Enhancement mode type  
High speed: t = 0.10 μs (typ.)  
f
Low saturation voltage: V  
= 1.75 V (typ.)  
CE (sat)  
FRD included between emitter and collector  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
±20  
15  
V
V
CES  
GES  
DC  
1 ms  
DC  
I
C
Collector current  
A
I
30  
CP  
JEDEC  
I
15  
A
A
F
Emitter-collector forward  
current  
JEITA  
1 ms  
I
30  
FM  
TOSHIBA  
2-10S1C  
Collector power dissipation  
(Tc = 25°C)  
P
70  
W
C
Weight: 1.5 g (typ.)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
Equivalent Circuit  
Marking  
Collector  
JEDEC  
JEITA  
15J331  
Part No. (or abbreviation code)  
Lot No.  
Gate  
TOSHIBA  
2-10S2C  
Emitter  
Weight: 1.4 g (typ.)  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2010-01-07  
GT15J331  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= ±20 V, V  
= 600 V, V  
= 0  
= 0  
±500  
1.0  
7.5  
2.3  
nA  
mA  
V
GES  
GE  
CE  
CE  
Collector cut-off current  
I
CES  
GE  
Gate-emitter cut-off voltage  
Collector-emitter saturation voltage  
Input capacitance  
V
I
I
= 1.5 mA, V  
= 5 V  
4.5  
GE (OFF)  
C
C
CE  
V
= 15 A, V  
= 15 V  
1.75  
2400  
V
CE (sat)  
GE  
= 20 V, V = 0, f = 1 MHz  
GE  
C
V
pF  
ies  
CE  
Rise time  
t
0.04  
0.22  
0.10  
0.37  
r
Inductive Load  
Turn-on time  
t
V
V
= 300 V, I = 15 A  
C
on  
CC  
GG  
Switching time  
μs  
= 15 V, R = 43 Ω  
G
Fall time  
t
f
0.23  
(Note1)  
Turn-off time  
t
off  
Peak forward voltage  
V
I
I
= 15 A, V = 0  
GE  
2.0  
200  
1.79  
3.45  
V
F
F
F
Reverse recovery time  
Thermal resistance (IGBT)  
Thermal resistance (Diode)  
t
= 15 A, di/dt = −100 A/μs  
ns  
rr  
R
R
°C/W  
°C/W  
th (j-c)  
th (j-c)  
Note1: Switching time measurement circuit and input/output waveforms  
V
GE  
90%  
10%  
0
0
V  
GE  
I
C
L
I
V
CC  
C
90%  
10%  
90%  
R
G
V
CE  
V
10%  
10%  
10%  
CE  
t
t
t
r
d (off)  
d (on)  
t
f
t
t
on  
off  
Note2: Switching loss measurement waveforms  
V
GE  
90%  
10%  
0
0
I
C
V
5%  
CE  
E
E
on  
off  
2
2010-01-07  
GT15J331  
I
– V  
V
– V  
CE GE  
C
CE  
50  
40  
20  
16  
12  
8
Common emitter  
Common emitter  
Tc = 25°C  
Tc = −40°C  
10  
15  
20  
30  
30  
20  
15  
9
4
10  
0
I
= 6 A  
C
V
= 8 V  
GE  
0
0
0
1
2
3
4
5
20  
20  
4
8
12  
16  
20  
Collector-emitter voltage  
V
(V)  
Gate-emitter voltage  
V
GE  
(V)  
CE  
V
– V  
V
– V  
CE GE  
CE  
GE  
20  
16  
12  
8
20  
16  
12  
8
Common emitter  
Common emitter  
Tc = 25°C  
Tc = 125°C  
30  
30  
15  
15  
4
4
I
= 6 A  
I
= 6 A  
C
C
0
0
0
0
4
8
12  
16  
4
8
12  
16  
20  
Gate-emitter voltage  
V
GE  
(V)  
Gate-emitter voltage  
V
GE  
(V)  
I
C
– V  
V – Tc  
CE (sat)  
GE  
4
3
2
1
0
30  
20  
10  
0
Common emitter  
= 5 V  
Common emitter  
= 15 V  
V
CE  
V
GE  
30 A  
15 A  
I
= 6 A  
C
40  
Tc = 125°C  
25  
0
4
8
12  
16  
60  
20  
20  
60  
100  
140  
Gate-emitter voltage  
V
GE  
(V)  
Case temperature Tc (°C)  
3
2010-01-07  
GT15J331  
Switching time  
t
, t – R  
r
Switching time  
t
, t – I  
on C  
on  
G
r
3
1
3
1
Common emitter  
Common emitter  
V
V
R
= 300 V  
= 15 V  
= 43 Ω  
CC  
GG  
G
V
V
= 300 V  
CC  
GG  
= 15 V  
I
= 15 A  
C
: Tc = 25°C  
: Tc = 125°C  
: Tc = 25°C  
0.5  
0.3  
0.5  
0.3  
: Tc = 125°C  
t
on  
t
on  
0.1  
0.1  
0.05  
0.03  
0.05  
0.03  
t
r
t
r
0.01  
0.01  
0
0
0
3
6
9
15  
1
3
10  
30  
100  
300  
1000  
1000  
1000  
12  
Gate resistance  
R
(Ω)  
Collector current  
I
(A)  
G
C
Switching time  
t
, t – R  
f
Switching time  
t
, t – I  
f C  
off  
G
off  
3
1
3
1
t
off  
0.5  
0.3  
0.5  
0.3  
t
off  
t
f
t
f
0.1  
0.1  
Common emitter  
Common emitter  
0.05  
0.03  
0.05  
0.03  
V
V
R
= 300 V  
= 15 V  
= 43 Ω  
: Tc = 25°C  
: Tc = 125°C  
CC  
GG  
V
V
= 300 V  
= 15 V  
= 15 A  
CC  
GG  
G
I
C
: Tc = 25°C  
: Tc = 125°C  
0.01  
0.01  
3
6
9
15  
1
3
10  
30  
100  
300  
12  
Collector current  
I
C
(A)  
Gate resistance  
R
(Ω)  
G
Switching loss  
E
, E – R  
on off  
Switching loss  
E
, E – I  
on off  
G
C
10  
10  
Common emitter  
Common emitter  
V
V
= 300 V  
= 15 V  
R = 43 Ω  
V
V
= 300 V  
= 15 V  
= 15 A  
CC  
GG  
CC  
GG  
3
1
I
G
C
: Tc = 25°C  
: Tc = 125°C  
: Tc = 25°C  
: Tc = 125°C  
1
Note2  
Note2  
Eon  
E
0.3  
0.1  
on  
0.1  
0.01  
E
off  
E
off  
0.03  
1
3
10  
30  
100  
300  
3
6
9
15  
12  
Gate resistance  
R
G
(Ω)  
Collector current  
I
C
(A)  
4
2010-01-07  
GT15J331  
C – V  
V
, V  
CE GE  
– Q  
G
CE  
3000  
1000  
500  
400  
20  
16  
C
ies  
Common emitter  
= 20 Ω  
R
L
Tc = 25°C  
300  
100  
300  
200  
12  
8
300  
200  
V
= 100 V  
CE  
C
oes  
30  
10  
3
C
res  
Common emitter  
= 0  
4
0
100  
0
V
GE  
f = 1 MHz  
Tc = 25°C  
1
3
10  
30  
100  
300  
1000  
3000  
0
10  
20  
30  
40  
50  
60  
70  
Collector-emitter voltage  
V
(V)  
Gate charge  
Q
G
(nC)  
CE  
I
F
V  
t , I I  
rr rr F  
F
30  
25  
20  
15  
10  
5
100  
10  
1
1000  
Common collector  
Common collector  
V = 0  
di/dt = −100 A/μS  
GE  
V
= 0  
GE  
: Tc = 25°C  
: Tc = 125°C  
100  
t
I
rr  
rr  
Tc = 125°C  
25  
40  
0
0
10  
15  
0.4  
0.8  
1.2  
1.6  
2.0  
0
3
6
9
12  
Forward voltage  
V
F
(V)  
Forward current  
I
F
(A)  
Safe operating area  
Reverse bias SOA  
50  
30  
50  
30  
I
max (pulse)*  
C
50 μs*  
10 ms*  
10  
10  
I
max  
C
(continuous)  
5
3
5
3
100 μs*  
DC  
operation  
1 ms*  
1
1
*:Single  
nonrepetitive pulse  
Tc = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
0.5  
0.3  
0.5  
0.3  
T 125°C  
j
V
= 15 V  
GE  
R
G
= 43 Ω  
0.1  
1
0.1  
1
3
10  
30  
100  
300  
1000  
3
10  
30  
100  
300  
1000  
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
CE  
5
2010-01-07  
GT15J331  
R
– t  
th (t)  
w
2
1
0
1
2
3
10  
10  
Tc = 25°C  
FRD  
10  
IGBT  
10  
10  
10  
10  
4
5
4
3
2
1
0
1
2
10  
10  
10  
10  
10  
10  
10  
10  
Pulse width  
t
(s)  
w
6
2010-01-07  
GT15J331  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR  
APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
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in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
7
2010-01-07  

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