GT15J311_06 [TOSHIBA]

HIGH POWER SWITCHING APPLICATIONS; 高功率开关应用
GT15J311_06
型号: GT15J311_06
厂家: TOSHIBA    TOSHIBA
描述:

HIGH POWER SWITCHING APPLICATIONS
高功率开关应用

开关 高功率电源
文件: 总7页 (文件大小:516K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GT15J311,GT15J311(SM)  
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT  
GT15J311, GT15J311(SM)  
HIGH POWER SWITCHING APPLICATIONS  
Unit: mm  
MOTOR CONTROL APPLICATIONS  
z Third-generation IGBT  
z Enhancement mode type  
z High speed  
: t = 0.30μs (Max.) (I = 15A)  
f
C
z Low saturation voltage  
: V (sat) = 2.7V (Max.) (I = 15A)  
CE C  
z FRD included between emitter and collector  
Absolute Maximum Ratings (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
CollectorEmitter Voltage  
GateEmitter Voltage  
V
V
600  
±20  
15  
V
V
A
A
A
A
CES  
GES  
DC  
1ms  
DC  
I
C
Collector Current  
I
30  
CP  
JEDEC  
EmitterCollector  
I
15  
F
JEITA  
Forward Current  
1ms  
I
30  
FM  
TOSHIBA  
Weight: 1.5 g (typ.)  
2-10S1C  
Collector Power Dissipation  
(Tc = 25°C)  
P
70  
W
C
Junction Temperature  
T
150  
°C  
°C  
j
Storage Temperature Range  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability  
data (i.e. reliability test report and estimated failure rate, etc).  
Equivalent Circuit  
Marking  
JEDEC  
15J311  
Part No. (or abbreviation code)  
Lot No.  
JEITA  
TOSHIBA  
Weight: 1.4 g (typ.)  
2-10S2C  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
1
2006-10-31  
GT15J311,GT15J311(SM)  
Electrical Characteristics (Ta = 25°C)  
CHARACTERISTIC  
Gate Leakage Current  
SYMBOL  
TEST CONDITION  
MIN  
TYP.  
MAX  
UNIT  
I
V
V
=±20V, V = 0  
CE  
5.0  
±500  
1.0  
8.0  
2.7  
nA  
mA  
V
GES  
GE  
Collector CutOff Current  
Gate-Emitter Cut-Off Voltage  
CollectorEmitter Saturation Voltage  
Input Capacitance  
I
= 600V, V  
= 0  
CES  
CE  
GE  
V
I
I
= 1.5mA, V  
= 5V  
GE (OFF)  
C
C
CE  
= 15V  
V
= 15A, V  
2.1  
950  
0.12  
0.40  
0.15  
0.50  
V
CE (sat)  
GE  
= 20V, V = 0, f = 1MHz  
GE  
C
V
pF  
ies  
CE  
Rise Time  
t
r
Inductive Load  
TurnOn Time  
Switching Time  
t
t
on  
V
V
= 300V, I = 15A  
CC  
GG  
C
μs  
= ±15V, R = 75Ω  
G
Fall Time  
t
0.30  
f
(Note 1)  
TurnOff Time  
Peak Forward Voltage  
off  
V
I
I
= 15A, V = 0  
GE  
2.0  
200  
V
F
F
F
Reverse Recovery Time  
t
rr  
= 15A, di / dt = 100A / μs  
ns  
Thermal Resistance (IGBT)  
Thermal Resistance (Diode)  
R
1.79 °C / W  
3.45 °C / W  
th (jc)  
th (jc)  
R
Note 1: Switching time measurement circuit and input / output waveforms  
Switching loss measurement waveforms  
2
2006-10-31  
GT15J311,GT15J311(SM)  
3
2006-10-31  
GT15J311,GT15J311(SM)  
4
2006-10-31  
GT15J311,GT15J311(SM)  
5
2006-10-31  
GT15J311,GT15J311(SM)  
6
2006-10-31  
GT15J311,GT15J311(SM)  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
7
2006-10-31  

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