2SK3440_06 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications; 硅N沟道MOS型开关稳压器, DC- DC转换器应用型号: | 2SK3440_06 |
厂家: | TOSHIBA |
描述: | Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications |
文件: | 总6页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3440
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3440
Switching Regulator, DC-DC Converter Applications
Unit: mm
Motor Drive Applications
•
•
•
•
Low drain-source ON resistance: R
= 6.5 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 30 S (typ.)
fs
Low leakage current: I
= 100 μA (V
= 60 V)
DSS
DS
Enhancement mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
th
DS
D
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
60
60
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
±30
50
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
200
125
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
644
mJ
(Note 2)
SC-97
2-9F1B
Avalanche current
I
50
12.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Characteristics
Symbol
Max
1.00
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 350 μH, R = 25 Ω, I = 50 A
4
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
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2006-11-17
2SK3440
Marking
Part No. (or abbreviation code)
Lot No.
K3440
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
60
2.0
⎯
15
⎯
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
V
GSS
GS
DS
DS
Drain cut-off current
I
= 60 V, V
= 0 V
= 0 V
DSS
(BR) DSS
GS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
⎯
D
V
V
V
V
= 10 V, I = 1 mA
⎯
4.0
8
V
th
DS (ON)
|Y |
DS
GS
DS
D
R
= 10 V, I = 25 A
6.5
30
mΩ
S
D
= 10 V, I = 25 A
⎯
fs
D
C
C
3700
280
1320
⎯
pF
pF
pF
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
Reverse transfer capacitance
Output capacitance
⎯
DS
rss
C
⎯
oss
I
= 25 A
D
10 V
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
12
30
12
50
55
⎯
⎯
⎯
⎯
⎯
V
GS
V
OUT
0 V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
∼
V
30 V
DD
V
:
IN
Turn-off time
t
off
<
Duty 1%, t = 10 μs
w
Total gate charge
Q
g
nC
(gate-source plus gate-drain)
∼
V
48 V, V
= 10 V, I = 50 A
GS D
DD
Gate-source charge
Q
⎯
⎯
35
20
⎯
⎯
nC
nC
gs
Gate-drain (“miller”) charge
Q
gd
Note 4: Connect the S1 and S2 pins together, and ground them except during switchin time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
50
Unit
A
Continuous drain reverse current
I 1
DR
⎯
⎯
⎯
(Note 1, Note 5)
Pulse drain reverse current
I
1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
200
1
A
A
A
DRP
(Note 1, Note 5)
Continuous drain reverse current
I
2
DR
(Note 1, Note 5)
Pulse drain reverse current
I
2
4
DRP
(Note 1, Note 5)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 50 A, V
= 50 A, V
= 0 V
⎯
⎯
⎯
⎯
70
−1.5
⎯
V
DS2F
DR
DR
GS
GS
t
= 0 V,
ns
nC
rr
dI /dt = 100 A/μs
DR
Q
rr
123
⎯
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
DR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
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2006-11-17
2SK3440
I
– V
I – V
D DS
D
DS
100
80
200
160
Common source
Common source
Tc = 25°C
15
10
8.5
15
10
8
Tc = 25°C, Pulse test
8.5
Pulse test
7.5
8
60
40
20
120
80
7
7.5
7
6.5
6.5
6
40
6
V
= 5.5 V
GS
V
= 5.5 V
GS
4
0
0
0
0
0.2
0.4
0.6
0.8
1.0
1
2
3
5
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
V
– V
I
D
– V
GS
DS
GS
100
80
60
40
20
0
1.2
1
Common source
= 10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
0.8
0.6
0.4
0.2
0
I
= 50 A
D
100
Tc = −55°C
25
12
25
0
2
4
6
8
10
0
4
8
12
16
20
24
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
R
– I
DS (ON)
fs
D
D
100
100
10
1
Common source
= 10 V
Common source
Tc = 25°C
Tc = −55°C
V
DS
25°C
Pulse test
Pulse test
100°C
10
V
= 10 V
GS
15
1
10
100
1
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2006-11-17
2SK3440
R
– Tc
I
– V
DR DS
DS (ON)
14
12
10
8
1000
100
10
Common source
Tc = 25°C
Pulse test
Common source
= 10 V
V
GS
Pulse test
I
= 50 A
D
25
12
6
4
1
2
3
1
10
V
= 0 V
GS
0
−80
0.1
0
−40
0
40
80
120
160
−0.2
−0.4
−0.6
−0.8
−1
−1.2
−1.4
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
10000
1000
100
6
5
4
3
2
Common source
= 10 V
V
DS
= 1 mA
I
D
C
Pulse test
iss
C
C
oss
rss
Common source
= 0 V
1
V
GS
f = 1 MHz
Tc = 25°C
0
−80
−40
0
40
80
120
160
10
0.1
Case temperature Tc (°C)
1
10
100
Drain-source voltage
V
DS
(V)
P
– Tc
Dynamic input/output characteristics
D
200
160
100
20
Common source
= 50 A
I
D
Tc = 25°C
80
60
40
20
0
16
12
8
Pulse test
V
= 12 V
DS
120
80
V
DS
48
24
V
GS
40
40
4
10
0
0
120
40
80
120
160
0
20
100
200
60
80
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2006-11-17
2SK3440
r
th
– t
w
10
1
Duty = 0.5
0.2
P
DM
0.1
0.05
0.02
0.1
0.01
t
T
Duty = t/T
0.01
R
= 1.0°C/W
th (ch-c)
Single pulse
100 μ
10 μ
1 m
10 m
100 m
1
10
Pulse width
t
(s)
w
Safe operating area
E
– T
ch
AS
500
300
1000
I
max (pulsed) *
D
800
600
400
200
100
100 μs *
I
max (continuous)
D
50
30
1 ms *
10
DC operation
5
3
0
25
*: Single nonrepetitive pulse
Tc = 25°C
50
75
100
125
150
Channel temperature (initial)
T
(°C)
ch
Curves must be derated
linearly with increase in
temperature
1
1
B
3
10
30
100
VDSS
15 V
0 V
Drain-source voltage
V
DS
(V)
I
AR
V
V
DS
DD
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 50 V, L = 350 μH
B
VDSS
DD
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2006-11-17
2SK3440
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2006-11-17
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