2SK3444 [TOSHIBA]
Switching Regulator, DC-DC Converter Applications Motor Drive Applications; 开关稳压器， DC- DC转换器应用电机驱动应用
| 型号： | 2SK3444 |
| 厂家： | 
TOSHIBA |
| 描述： | Switching Regulator, DC-DC Converter Applications Motor Drive Applications |
| 文件： | 总6页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3444
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3444
Switching Regulator, DC-DC Converter Applications
Unit: mm
Motor Drive Applications
•
•
•
•
Low drain-source ON resistance: R
= 65 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 10 S (typ.)
fs
= 100 µA (V
Low leakage current: I
= 200 V)
DS
DSS
Enhancement mode: V = 3.0 to 5.0 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings
=
(Ta 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
200
200
±30
25
V
V
V
DSS
Drain-gate voltage (R
= 20 kΩ)
V
DGR
GS
Gate-source voltage
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
100
125
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
488
mJ
(Note 2)
SC-97
2-9F1B
Avalanche current
I
25
12.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
ch
150
Storage temperature range
T
stg
−55 to 150
Thermal Characteristics
Notice:
Characteristics
Symbol
Max
1.00
Unit
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 1.26 mH, I = 25 A, R = 25 Ω
4
V
DD
ch
AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
Marking
3
Part No. (or abbreviation code)
Lot No.
K3444
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06
2SK3444
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
±10
100
⎯
µA
µA
V
GSS
GS
DS
DS
Drain cut-off current
I
= 200 V, V
= 0 V
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
200
3.0
⎯
⎯
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
5.0
82
⎯
V
th
DS
GS
DS
D
R
= 10 V, I = 12.5 A
65
mΩ
S
DS (ON)
D
|Y |
fs
= 10 V, I = 12.5 A
5
10
D
C
C
⎯
2080
280
1060
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
pF
ns
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
GS
rss
C
oss
⎯
⎯
Rise time
t
⎯
⎯
⎯
⎯
⎯
20
40
10
40
44
⎯
⎯
⎯
⎯
⎯
r
I
= 12.5 A
D
10 V
V
GS
V
OUT
0 V
Turn-on time
Switching time
t
on
Fall time
t
f
∼
V
100 V
DD
<
Turn-off time
t
Duty 1%, t = 10 µs
off
w
Total gate charge
(gate-source plus gate-drain)
Q
g
∼
V
I
160 V, V
= 25 A
= 10 V,
GS
DD
nC
Gate-source charge
Q
⎯
⎯
21
23
⎯
⎯
D
gs
Gate-drain (“miller”) charge
Q
gd
Note 4: Connect the S1 pin and S2 pin together, and ground them except during switching time measurement.
Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
⎯
Typ.
⎯
Max
25
100
1
Unit
A
Continuous drain reverse current
I
1
⎯
⎯
⎯
⎯
DR
(Note 1, Note 5)
Pulse drain reverse current
I
1
⎯
⎯
A
DRP
(Note 1, Note 5)
Continuous drain reverse current
I
2
⎯
⎯
A
DR
(Note 1, Note 5)
Pulse drain reverse current
I
2
⎯
⎯
4
A
DRP
(Note 1, Note 5)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 25 A, V = 0 V
GS
⎯
⎯
⎯
⎯
290
2.2
−1.5
⎯
V
DS2F
DR1
t
ns
µC
rr
= 25 A, V
= 0 V,
GS
DR
DR
dI /dt = 100 A/µs
Q
rr
⎯
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
DR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
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2SK3444
I
– V
I – V
D DS
D
DS
50
40
30
20
10
0
100
80
60
40
20
0
Common source
Tc = 25°C
Pulse test
Common
source
15
10
9.5
15
12
11
Tc = 25°C
Pulse test
9
8.5
10
8
9
8
7.5
7
V
= 6.5 V
V
= 7 V
GS
GS
0
2
4
6
8
10
0
4
8
12
16
20
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
– V
V – V
DS GS
D
GS
50
40
30
20
10
0
4
3
2
1
0
Common source
Common source
Tc = 25°C
V
DS
= 10 V
Pulse test
Pulse test
Tc = −55°C
I
D
= 25 A
100
12
6
25
0
4
8
12
16
20
0
4
8
12
16
20
Gate-source voltage
V
(V)
Gate-source voltage
V
(V)
GS
GS
⎪Y ⎪ – I
R
– I
DS (ON)
fs
D
D
100
10
1
1000
100
10
Common source
Common source
Tc = 25°C
V
DS
= 10 V
Pulse test
Pulse test
Tc = −55°C
25
V
GS
= 10 V
100
15
1
10
Drain current
100
1
10
100
I
D
(A)
Drain current
I
D
(A)
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2SK3444
R
– Tc
I
– V
DR DS
DS (ON)
160
120
80
40
0
100
10
1
Common source
Tc = 25°C
Common source
= 10 V
12
V
GS
6
Pulse test
Pulse test
I
D
= 25 A
10
5
3
1
V
GS
= 0 V
0.1
0
−80
−40
0
40
80
120
160
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
Drain-source voltage (V)
Case temperature Tc (°C)
V
DS
Capacitance – V
V
– Tc
th
DS
10000
1000
100
6
5
4
3
2
1
0
C
iss
C
oss
C
rss
Common source
= 10 V
V
DS
= 1 mA
Common source
= 0 V
I
D
V
GS
Pulse test
f = 1 MHz
Tc = 25°C
−80
−40
0
40
80
120
160
10
0.1
Case temperature Tc (°C)
1
10
100
Drain-source voltage
V
DS
(V)
P
D
– Tc
Dynamic input/output characteristics
200
160
120
80
200
20
Common source
I
D
= 25 A
V
DS
Tc = 25°C
Pulse test
16
12
8
160
120
80
V
= 40 V
DS
80
160
V
GS
40
40
4
10
0
0
0
100
40
80
120
160
200
0
20
40
60
Q
80
Case temperature Tc (°C)
Total gate charge
(nC)
g
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2SK3444
r
– t
w
th
10
1
Duty = 0.5
0.2
0.1
P
DM
0.1
t
0.05
0.02
T
Duty = t/T
0.01
R
= 1.0°C/W
th (ch-c)
Single pulse
100 µ
0.01
10 µ
1 m
10 m
100 m
1
10
Pulse width
t
w
(S)
Safe operating area
E – T
AS ch
1000
100
10
500
400
300
200
100
I
max (pulsed) *
D
100 µs*
1 ms*
I
max (continuous)
D
DC operation
Tc = 25°C
0
25
50
75
100
125
(°C)
150
1
Channel temperature (initial)
T
ch
*
Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
B
VDSS
V
DSS
max
15 V
0.1
1
10
100
1000
I
AR
−15 V
Drain-source voltage
V
DS
(V)
V
V
DS
DD
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
R
V
= 25 Ω
2
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 50 V, L = 1.26 mH
B
VDSS
DD
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2004-07-06
2SK3444
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2004-07-06
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