2SK3442 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII); 东芝场效应晶体管硅N沟道MOS型（ U- MOSII ）
| 型号： | 2SK3442 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 文件： | 总6页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and
Unit: mm
Motor Drive Applications
·
·
·
·
Low drain-source ON resistance: R
= 15 mΩ (typ.)
DS (ON)
High forward transfer admittance: ïY ï = 28 S (typ.)
fs
= 100 µA (V
Low leakage current: I
= 100 V)
= 10 V, I = 1 mA)
DSS
DS
Enhancement-mode: V = 2.0~4.0 V (V
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
100
100
±30
45
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
DC (Note 1)
I
D
Drain current
A
Pulse
I
180
125
468
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
W
JEDEC
JEITA
―
D
AS
AR
Single pulse avalanche energy
(Note 2)
SC-97
2-9F1B
E
mJ
TOSHIBA
Avalanche current
I
45
12.5
A
Weight: 0.74 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
-55~150
stg
Thermal Characteristics
Notice:
Characteristics
Symbol
Max
1.00
Unit
°C/W
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
Thermal resistance, channel to case
R
th (ch-c)
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
4
Note 2
V
DD
= 25 V, T = 25°C (initial), L = 373 mH, R = 25 W, I = 45 A
ch AR
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
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2002-08-29
2SK3442
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
¾
¾
±10
100
¾
mA
mA
V
GSS
GS
DS
DS
Drain cut-off current
= 100 V, V
= 0 V
GS
DSS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V = 0 V
GS
100
2.0
¾
¾
(BR) DSS
D
V
V
V
V
= 10 V, I = 1 mA
¾
4.0
20
¾
V
th
DS
GS
DS
D
R
= 10 V, I = 23 A
15
mW
S
DS (ON)
D
ïY ï
fs
= 10 V, I = 23 A
14
¾
28
D
C
C
4100
340
980
¾
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
¾
¾
DS
rss
¾
¾
C
oss
Rise time
t
¾
¾
15
45
¾
¾
r
10 V
I
= 23 A
V
OUT
D
V
GS
0 V
Turn-on time
Switching time
t
on
Fall time
t
¾
¾
¾
20
95
85
¾
¾
¾
f
~
V
50 V
-
DD
<
Turn-off time
t
Duty 1%, t = 10 ms
off
w
Total gate charge (gate-source plus
gate-drain)
Q
g
~
V
80 V, V
= 10 V, I = 45 A
nC
-
DD
GS
D
Gate-source charge
Q
Q
¾
¾
50
35
¾
¾
gs
Gate-drain (“miller”) charge
gd
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
¾
Typ.
¾
Max
45
180
1
Unit
A
Continuous drain reverse current
I
1
¾
¾
¾
¾
DR
(Note 1, Note 5)
Pulse drain reverse current
(Note 1, Note 5)
Continuous drain reverse current
(Note 1, Note 5)
Pulse drain reverse current
(Note 1, Note 5)
I
I
1
¾
¾
A
DRP
I
2
¾
¾
A
DR
2
¾
¾
4
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 45 A, V
= 45 A, V
= 0 V
= 0 V,
¾
¾
¾
¾
-1.5
¾
V
ns
nC
DS2F
DR
DR
GS
GS
t
160
512
rr
dI /dt = 50 A/ms
Q
rr
¾
DR
Note 5: I
I
, I
: drain, flowing current value between the S2 pin, open the S1 pin
: drain, flowing current value between the S1 pin, open the S2 pin
DR1 DRP1
, I
DR2 DRP2
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
※ Lot Number
Type
K3442
Month (starting from alphabet A)
Year (last number of the christian era)
※
2
2002-08-29
2SK3442
I
– V
I
– V
DS
D
DS
15
D
8
100
200
8
Common source
Tc = 25°C
Pulse test
10
7
10
80
60
40
20
160
120
80
7.5
7
6.5
6.5
GS
V
= 6 V
GS
40
V
= 6 V
Common source Tc = 25°C Pulse test
0
0
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
100
80
60
40
20
0
5
4
3
2
1
0
Common source
= 10 V
Common source
Tc = 25°C
Pulse test
V
DS
Pulse test
25
Tc = 100°C
11
23
I
= 45 A
D
-55
0
4
8
12
16
(V)
20
0
4
8
12
16
(V)
20
Gate-source voltage
V
Gate-source voltage
V
D
GS
GS
ïY ï – I
fs
R
– I
D
DS (ON)
500
300
500
300
Common source
= 10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
100
100
50
30
50
30
25
V
GS
= 10 V
15
10
10
Tc = 100°C
-55
5
3
5
3
1
1
0.1
0.3 0.5
1
3
5
10
30 50 100
1
3
5
10
30 50 100
300 500 1000
Drain current
I
D
(A)
Drain current
I
D
(A)
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2002-08-29
2SK3442
R
– Tc
I
– V
DR DS
DS (ON)
50
40
30
20
10
0
1000
Common source
Common source
Tc = 25°C
Pulse test
V
= 10 V
GS
Pulse test
300
100
45
30
10
11
10
I
= 23 A
D
5
3
1
3
V
GS
= 0 V
-80
-40
0
40
80
120
160
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
Drain-source voltage (V)
Case temperature Tc
(°C)
V
DS
Capacitance – V
V
– Tc
th
DS
50000
30000
6
5
4
3
2
1
Common source
= 10 V
V
DS
= 1 mA
I
D
10000
Pulse test
C
5000
3000
iss
1000
C
oss
500
300
Common source
V
= 0 V
GS
C
rss
f = 1 MHz
Tc = 25°C
100
0
0.1
0.3 0.5
1
3
5
10
30 50 100
(V)
-80
-40
0
40
80
120
160
Drain-source voltage
V
Case temperature Tc
(°C)
DS
P
– Tc
Dynamic input/output characteristics
D
200
160
120
80
100
20
Common source
I
= 45 A
D
V
DS
Tc = 25°C
80
60
40
20
0
16
12
8
Pulse test
20
V
DD
= 80 V
40
V
GS
40
4
10
0
0
40
80
120
160
(°C)
200
0
40
80
120
Q
160
(nC)
200
Case temperature Tc
Total gate charge
g
4
2002-08-29
2SK3442
r
th
– t
w
10
3
1
Duty = 0.5
0.3
0.1
0.2
0.1
P
DM
t
0.05
0.02
T
0.03
0.01
Duty = t/T
th (ch-c)
0.01
R
= 1.0°C/W
Single pulse
100 m
10 m
1 m
10 m
Pulse width
100 m
1
10
t
w
(s)
Safe operating area
E
– T
AS ch
1000
300
500
400
300
200
100
0
I
max (pulsed) *
D
100 ms *
1 ms *
100
I
max (continuous)
DC operation
D
30
10
3
25
50
75
100
125
150
175
1
Channel temperature (initial) Tch (°C)
*
Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.3
B
VDSS
V
max
15 V
0 V
DSS
300
(V)
0.1
I
1
3
10
30
100
1000
AR
Drain-source voltage
V
DS
V
V
DS
DD
Test circuit
Wave form
æ
ö
÷
÷
ø
1
2
ç
B
VDSS
VDSS
R
V
= 25 W
DD
G
=
×L×I
×
Ε
AS
ç
2
-
= 25 V, L = 373 mH
B
V
DD
è
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2002-08-29
2SK3442
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-08-29
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