2SK3442_06 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications; 硅N沟道MOS型开关稳压器， DC-DC转换器和电机驱动应用
| 型号： | 2SK3442_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 文件： | 总6页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
High forward transfer admittance: ⎪Y ⎪ = 28 S (typ.)
= 15 mΩ (typ.)
DS (ON)
fs
Low leakage current: I
= 100 μA (V
= 100 V)
DSS
DS
Enhancement mode: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
100
100
±30
45
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
180
125
DP
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
Single pulse avalanche energy
(Note 2)
E
468
mJ
JEDEC
JEITA
―
SC-97
2-9F1B
Avalanche current
I
45
12.5
A
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
TOSHIBA
AR
T
ch
150
Weight: 0.74 g (typ.)
Storage temperature range
T
stg
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Characteristics
Symbol
Max
1.00
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2 = 25 V, T = 25°C (initial), L = 373 μH, R = 25 Ω, I
4
V
DD
= 45 A
AR
ch
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
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2006-11-20
2SK3442
Marking
Part No. (or abbreviation code)
Lot No.
K3442
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±25 V, V
= 100 V, V
= 0 V
= 0 V
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
V
GSS
GS
DS
DS
Drain cut-off current
I
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
100
2.0
⎯
⎯
D
GS
V
V
V
V
= 10 V, I = 1 mA
⎯
4.0
20
⎯
V
th
DS (ON)
⎪Y ⎪
DS
GS
DS
D
R
= 10 V, I = 23 A
15
mΩ
S
D
= 10 V, I = 23 A
14
⎯
28
fs
D
C
C
4100
340
980
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
⎯
oss
10 V
GS
I
= 23 A
V
OUT
Rise time
t
r
⎯
⎯
⎯
⎯
⎯
15
45
20
95
85
⎯
⎯
⎯
⎯
⎯
D
V
0 V
Turn-on time
Switching time
t
on
Fall time
t
f
∼
V
50 V
DD
<
Turn-off time
t
Duty 1%, t = 10 μs
off
w
Total gate charge (gate-source plus
gate-drain)
Q
g
∼
V
80 V, V
= 10 V, I = 45 A
nC
DD
GS
D
Gate-source charge
Q
gs
⎯
⎯
50
35
⎯
⎯
Gate-drain (“miller”) charge
Q
gd
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
45
Unit
A
Continuous drain reverse current
I 1
DR
⎯
⎯
⎯
(Note 1, Note 5)
Pulse drain reverse current
I
1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
180
1
A
A
A
DRP
(Note 1, Note 5)
Continuous drain reverse current
I
2
DR
(Note 1, Note 5)
Pulse drain reverse current
I
2
DRP
4
(Note 1, Note 5)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 45 A, V
= 45 A, V
= 0 V
⎯
⎯
⎯
⎯
−1.5
⎯
V
DS2F
DR
DR
GS
GS
t
= 0 V,
160
512
ns
nC
rr
dI /dt = 50 A/μs
DR
Q
rr
⎯
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
DR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
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2006-11-20
2SK3442
I
– V
I
– V
DS
D
DS
15
D
8
100
200
8
Common source
Tc = 25°C
10
7
10
Pulse test
80
60
40
20
0
160
120
80
7.5
7
6.5
6.5
GS
V
= 6 V
GS
40
V
= 6 V
Common source Tc = 25°C Pulse test
0
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
100
80
60
40
20
0
5
4
3
2
1
0
Common source
Tc = 25°C
Common source
= 10 V
V
DS
Pulse test
Pulse test
25
Tc = 100°C
11
23
I
= 45 A
D
−55
0
4
8
12
16
20
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
D
(V)
GS
⎪Y ⎪ – I
fs
R
– I
DS (ON)
D
500
300
500
300
Common source
= 10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
100
100
50
30
50
30
25
V
= 10 V
GS
15
10
10
Tc = 100°C
−55
5
3
5
3
1
0.1
1
1
0.3 0.5
1
3
5
10
30 50 100
3
5
10
30 50 100
300 500 1000
Drain current
I
(A)
Drain current
I
(A)
D
D
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2006-11-20
2SK3442
R
– Tc
I
– V
DR DS
DS (ON)
50
40
30
20
10
0
1000
Common source
= 10 V
Pulse test
Common source
Tc = 25°C
V
GS
300
100
Pulse test
45
30
10
11
10
I
= 23 A
D
5
3
1
3
V
= 0 V
GS
−80
−40
0
40
80
120
160
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
50000
30000
6
5
4
3
2
1
Common source
= 10 V
V
DS
= 1 mA
I
D
10000
Pulse test
C
5000
3000
iss
1000
C
oss
500
300
Common source
V
= 0 V
GS
C
rss
f = 1 MHz
Tc = 25°C
100
0.1
0
−80
0.3 0.5
1
3
5
10
30 50 100
−40
0
40
80
120
160
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
P
– Tc
Dynamic input/output characteristics
D
200
160
120
80
100
20
Common source
I
= 45 A
D
V
DS
Tc = 25°C
80
60
40
20
0
16
12
8
Pulse test
20
V
= 80 V
DD
40
V
GS
40
4
10
0
0
200
40
80
120
160
200
0
40
80
120
Q
160
Case temperature Tc (°C)
Total gate charge
(nC)
g
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2006-11-20
2SK3442
r
th
– t
w
10
3
1
Duty = 0.5
0.3
0.1
0.2
0.1
P
DM
t
0.05
0.02
T
0.03
0.01
Duty = t/T
0.01
R
= 1.0°C/W
th (ch-c)
Single pulse
100 μ
10 μ
1 m
10 m
100 m
1
10
Pulse width
t
(s)
w
Safe operating area
E
– T
ch
AS
1000
300
500
400
300
200
100
0
I
max (pulsed) *
D
100 μs *
1 ms *
100
I
max (continuous)
DC operation
D
30
10
3
25
50
75
100
125
150
175
1
Channel temperature (initial) Tch (°C)
*
Single nonrepetitive pulse
Tc = 25°C
0.3
Curves must be derated
linearly with increase in
temperature.
B
VDSS
V
max
15 V
0 V
DSS
0.1
I
1
3
10
30
100
300
1000
AR
Drain-source voltage
V
DS
(V)
V
V
DS
DD
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
VDSS
2
R
V
= 25 Ω
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 25 V, L = 373 μH
B
VDSS
DD
5
2006-11-20
2SK3442
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-20
相关型号：
2SK3443_06
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications
TOSHIBA
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