2SK3441 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII); 东芝场效应晶体管硅N沟道MOS型（ U- MOSII ）
| 型号： | 2SK3441 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) |
| 文件： | 总6页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3441
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441
DC-DC Converter
Relay Drive and Motor Drive Applications
Unit: mm
·
·
·
·
Low drain-source ON resistance: R
= 4.5 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 80 S (typ.)
fs
= 100 µA (max) (V
Low leakage current: I
= 60 V)
DSS
DS
Enhancement-mode: V = 1.3 to 2.5 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
60
60
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
±20
75
DC
(Note 1)
I
D
Drain current
A
<
Pulse (t 1 ms)
I
300
125
468
DP
(Note 1)
JEDEC
JEITA
―
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
SC-97
2-9F1B
Single pulse avalanche energy
E
mJ
(Note 2)
TOSHIBA
Avalanche current
I
75
12.5
A
Weight: 0.74 g (typ.)
Circuit Configuration
Notice:
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
-55 to 150
stg
Thermal Characteristics
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
Characteristics
Symbol
Max
1.00
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
4
Note 2: V
DD
= 25 V, T = 25°C (initial), L = 113 mH, R = 25 W,
ch
= 75 A
G
I
AR
1
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
2
3
1
2002-02-06
2SK3441
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
60
40
1.3
¾
¾
40
¾
¾
¾
¾
¾
±10
100
¾
mA
mA
GSS
GS
DS
DS
Drain cut-off current
= 60 V, V
= 10 mA, V
= 10 mA, V
= 0 V
= 0 V
= -20 V
DSS
GS
GS
GS
V
V
I
I
¾
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
¾
¾
V
V
V
V
V
= 10 V, I = 1 mA
¾
2.5
5.8
10
¾
th
DS
GS
GS
DS
D
= 10 V, I = 38 A
4.5
5.8
80
9300
910
1435
D
Drain-source ON resistance
R
mW
S
DS (ON)
= 4 V, I = 38 A
D
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
|Y |
= 10 V, I = 38 A
D
fs
C
C
¾
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
¾
DS
rss
C
oss
¾
I
= 38 A
D
10 V
0 V
Rise time
t
¾
¾
¾
¾
¾
18
40
¾
¾
¾
¾
¾
r
V
GS
V
OUT
Turn-on time
Switching time
t
on
Fall time
t
42
f
~
-
V
30 V
DD
Turn-off time
t
250
210
off
<
Duty 1%, t = 10 ms
w
Total gate charge
Q
g
(gate-source plus gate-drain)
~
-
V
48 V, V
= 10 V, I = 75 A
nC
DD
GS
D
Gate-source charge
Gate-drain (“miller”) charge
Q
Q
¾
¾
145
65
¾
¾
gs
gd
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
¾
Typ.
¾
Max
75
300
1
Unit
A
Continuous drain reverse current
I
1
¾
¾
¾
¾
DR
(Note 1, Note 5)
Pulse drain reverse current
I
I
1
¾
¾
A
DRP
(Note 1, Note 5)
Continuous drain reverse current
(Note 1, Note 5)
Pulse drain reverse current
(Note 1, Note 5)
I
2
¾
¾
A
DR
2
¾
¾
4
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
1 = 75 A, V = 0 V
GS
¾
¾
¾
¾
60
50
-1.5
¾
V
ns
nC
DS2F
DR
DR
t
= 75 A, V
= 0 V,
GS
rr
dI /dt = 50 A/ms
Q
rr
¾
DR
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
※ Lot Number
Type
K3441
Month (starting from alphabet A)
Year (last number of the christian era)
※
2
2002-02-06
2SK3441
I
– V
I – V
D DS
D
DS
100
80
200
160
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
6
4
3.6
3.4
10
5
4.5
3.8
4
8
3.8
10
60
40
20
120
80
3.6
3.2
3.4
3.2
40
V
GS
= 3 V
V
GS
= 3 V
0
0
0
0.2
0.4
0.6
0.8
(V)
1.0
0
2
4
6
8
10
Drain-source voltage
V
Drain-source voltage
V
(V)
DS
DS
V
– V
I
– V
DS
GS
D
GS
120
100
80
60
40
20
0
0.6
0.5
0.4
0.3
0.2
0.1
0
Common source
= 10 V
Common source
Tc = 25°C
Pulse test
V
DS
Pulse test
I
= 70 A
D
35
15
25
100
2
Tc = -55°C
0
1
3
4
5
6
0
2
4
6
8
10
(V)
12
Gate-source voltage
V
(V)
Gate-source voltage
V
D
GS
GS
ïY ï – I
fs
R
– I
D
DS (ON)
300
100
50
30
Common source
Tc = 25°C
Common source
V
= 10 V
DS
Pulse test
Pulse test
Tc = -55°C
10
25
50
30
V
GS
= 4 V
100
5
3
10
10
5
1
3
5
30
50
1
10
100
3
5
30
50
1
10
100
Drain current
I
D
(A)
Drain current
I
D
(A)
3
2002-02-06
2SK3441
R
– Tc
I
– V
DR DS
DS (ON)
12
10
8
300
100
Common source
Pulse test
10
I
= 70 A
5
D
35
15
50
30
3
V
GS
= 0, -1 V
6
V
GS
= 4 V
I
= 15, 35, 70 A
D
10
4
2
0
5
3
V
GS
= 10 V
Common source
Tc = 25°C
Pulse test
1
-80
-40
0
40
80
120
160
0
-0.4
-0.8
-1.2
-1.6
-2.0
Case temperature Tc (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Tc
th
DS
100000
5
4
Common source
= 10 V
V
50000
30000
DS
= 1 mA
I
D
Pulse test
C
iss
10000
3
2
1
5000
3000
Common source
C
C
oss
1000
V
GS
= 0 V
f = 1 MHz
Tc = 25°C
500
300
rss
0
0.1
0.3 0.5
1
3
5
10
30 50 100
(V)
-80
-40
0
40
80
120
160
Drain-source voltage
V
Case temperature Tc (°C)
DS
P
– Tc
Dynamic input/output characteristics
D
200
160
50
25
Common source
= 75 A
Tc = 25°C
V
DS
I
D
40
30
20
10
0
20
15
10
5
Pulse test
120
80
V
DD
= 48 V
24
12
40
V
GS
10
0
80
Total gate charge
0
40
80
120
160
0
160
240
Q
400
200
320
Case temperature Tc (°C)
(nC)
g
4
2002-02-06
2SK3441
r
th
– t
w
10
1
Duty = 0.5
0.2
P
DM
0.1
0.05
0.02
0.1
0.01
t
T
Duty = t/T
th (ch-c)
0.01
R
= 1.0°C/W
Single
0.00001
0.0001
0.001
0.01
Pulse width
0.1
1
10
t
w
(s)
E
– T
ch
Safe operating area
AS
1000
100
600
500
400
300
200
100
0
I
max (pulsed) *
D
100 ms *
I
max
D
1 ms *
(continuous)
10
1
DC operation
Tc = 25°C
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature
V
max
DSS
0.1
25
50
75
100
125
(°C)
150
0.1
1
10
100
(V)
1000
Drain-source voltage
V
Channel temperature (initial) T
ch
DS
B
VDSS
15 V
0 V
I
AR
V
V
DS
DD
Test circuit
Waveform
æ
ö
÷
÷
ø
1
2
ç
B
R
V
= 25 W
DD
VDSS
G
=
×L×I
×
Ε
AS
ç
2
-
= 25 V, L = 236 mH
B
V
DD
VDSS
è
5
2002-02-06
2SK3441
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-02-06
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