2SK3439_06 [TOSHIBA]
Silicon N Channel MOS Type DC-DC Converter Applications; 硅N沟道MOS型DC- DC转换器应用
| 型号： | 2SK3439_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type DC-DC Converter Applications |
| 文件： | 总6页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3439
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3439
DC-DC Converter Applications
Unit: mm
Relay Drive and Motor Drive Applications
•
•
•
•
Low drain-source ON resistance: R
= 3.8 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 70 S (typ.)
fs
Low leakage current: I
= 100 µA (max) (V
= 30 V)
DSS
DS
Enhancement mode: V = 1.3 to 2.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
30
30
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
±20
75
GSS
DC
(Note 1)
I
D
Drain current
A
<
Pulse (t 1 ms)
I
300
125
731
DP
(Note 1)
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
mJ
(Note 2)
SC-97
2-9F1B
Avalanche current
I
75
12.5
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Notice:
Characteristics
Symbol
Max
1.00
Unit
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into the S2 pin.
Thermal resistance, channel to case
R
°C/W
th (ch-c)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 24 V, T = 25°C (initial), L = 100 μH, R = 25 Ω, I
V
DD
= 75 A
AR
ch
G
4
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2
3
1
2006-11-16
2SK3439
Marking
Part No. (or abbreviation code)
Lot No.
K3439
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics (Note 4) (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
30
1.3
⎯
⎯
35
⎯
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
V
GSS
GS
DS
DS
Drain cut-off current
I
= 30 V, V
= 0 V
= 0 V
DSS
GS
GS
Drain-source breakdown voltage
Gate threshold voltage
V
I
= 10 mA, V
⎯
(BR) DSS
D
V
V
V
V
V
= 10 V, I = 1 mA
⎯
2.5
5.0
10
⎯
V
th
DS
GS
GS
DS
D
= 10 V, I = 38 A
3.8
5.0
70
D
Drain-source ON resistance
R
mΩ
DS (ON)
= 4 V, I = 38 A
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 38 A
S
D
C
C
5450
620
1850
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
⎯
DS
rss
C
⎯
oss
Rise time
t
r
⎯
⎯
⎯
15
30
65
⎯
⎯
⎯
I
= 38 A
D
10 V
V
GS
V
OUT
0 V
Turn-on time
Switching time
t
on
Fall time
t
f
V
≈ 15 V
DD
Turn-off time
t
⎯
⎯
110
116
⎯
⎯
off
<
Duty 1%, t = 10 μs
w
Total gate charge
Q
g
(gate-source plus gate-drain)
V
≈ 34 V, V
= 10 V, I = 75 A
nC
DD
GS
D
Gate-source charge
Q
⎯
⎯
84
32
⎯
⎯
gs
Gate-drain (“miller”) charge
Q
gd
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
75
Unit
A
Continuous drain reverse current
I 1
DR
⎯
⎯
⎯
(Note 1, Note 5)
Pulse drain reverse current
(Note 1, Note 5)
Continuous drain reverse current
I
1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
300
1
A
A
A
DRP
I
2
DR
(Note 1, Note 5)
Pulse drain reverse current
I
2
DRP
4
(Note 1, Note 5)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
1 = 75 A, V
= 0 V
⎯
⎯
⎯
⎯
−1.5
⎯
V
DS2F
DR
GS
t
120
180
ns
nC
rr
= 75 A, V
= 0 V,
DR
GS
dI /dt = 50 A/μs
DR
Q
rr
⎯
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
DR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
I
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
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2006-11-16
2SK3439
I
– V
I – V
D DS
D
DS
4
100
80
100
80
Common source
Tc = 25°C
Common source
6
10
4
3.5
3.3
3.4
Tc = 25°C
6
8
Pulse test
Pulse test
10
3.2
60
40
20
60
40
20
3.0
3.0
V
= 2.8 V
V
= 2.8 V
GS
GS
0.8
0
0
0
0
0.2
0.4
0.6
1.0
1
2
3
4
5
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
V
– V
I
D
– V
GS
DS
GS
160
120
80
0.8
0.6
0.4
0.2
0
Common source
= 10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
I
= 75 A
D
40
38
19
Tc = −55°C
100
2
25
0
0
4
6
0
5
10
15
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
D
(V)
GS
⎪Y ⎪ – I
fs
R
– I
DS (ON)
D
500
300
30
10
Common source
Tc = 25°C
Tc = −55°C
Pulse test
100
100
V
= 4 V
GS
10
25
5
3
50
30
10
Common source
= 10 V
1
V
DS
5
3
Pulse test
100
0.5
1
1
3
5
10
30 50
300
3
5
30
50
10
100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2006-11-16
2SK3439
R
– Tc
I
– V
DS
DS (ON)
DR
3
6
5
4
3
300
100
Common source
= 10 V
I
= 75 A
V
D
DS
10
Pulse test
50
30
5
19, 38
10
5
3
1
V
= 0 V
GS
2
1
0
1
0.5
0.3
Common source
Tc = 25°C
Pulse test
0.1
0
−80
−40
0
40
80
120
160
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
10000
4
3
2
1
C
Common source
iss
V
I
= 10 V
DS
= 1 mA
3000
1000
D
Pulse test
C
oss
C
rss
Common source
300
100
V
= 0 V
GS
f = 1 MHz
Tc = 25°C
0.1
0.3
1
3
10
30
0
−80
Drain-source voltage
V
DS
(V)
−40
0
40
80
120
160
Case temperature Tc (°C)
P
– Tc
Dynamic input/output characteristics
D
200
160
50
20
Common source
= 75 A
I
D
Tc = 25°C
V
40
30
20
10
0
16
12
8
GS
Pulse test
120
80
6
V
V
= 24 V
DD
DS
12
40
4
10
0
0
200
40
40
80
120
160
0
80
120
200
160
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
4
2006-11-16
2SK3439
r
th
– t
w
3
1
Duty = 0.5
0.2
0.3
0.1
0.03
0.01
P
DM
0.1
0.05
0.02
t
T
Duty = t/T
0.01
R
= 1.0°C/W
th (ch-c)
Single
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse width
t
(s)
w
E
– T
ch
Safe operating area
AS
300
100
1000
I
max (pulsed) *
D
100 μs *
I
max (continuous)
D
800
600
400
200
0
1 ms *
30
10
DC operation
Tc = 25°C
3
1
*: Single nonrepetitive pulse
Tc = 25°C
25
50
75
100
125
150
0.3
0.1
Curves must be derated
linearly with increase in
temperature
Channel temperature (initial)
T
(°C)
ch
V
max
DSS
0.1
1
10
100
Drain-source voltage
V
DS
(V)
B
VDSS
15 V
0 V
I
AR
V
V
DS
DD
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
VDSS
2
R
V
= 25 Ω
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 24 V, L = 100 μH
B
VDSS
DD
5
2006-11-16
2SK3439
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-16
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