2SK3176_07 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications; 硅N沟道MOS型开关稳压器， DC-DC转换器和电机驱动应用
| 型号： | 2SK3176_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 文件： | 总6页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 38 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 30 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 200 V)
DSS
DS
Enhancement-mode: V = 1.5 to 3.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
200
200
±20
30
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
I
1. GATE
D
Drain current
A
2. DRAIN (HEAT SINK)
3. SOURCE
Pulse (Note 1)
I
120
150
DP
Drain power dissipation
(Tc = 25°C)
P
W
D
AS
AR
JEDEC
⎯
Single pulse avalanche energy
(Note 2)
E
925
mJ
JEITA
SC-65
Avalanche current
I
30
15
A
TOSHIBA
2-16C1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 4.6 g (typ.)
T
ch
150
Storage temperature range
T
stg
−55 to 150
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 1.66 mH, R = 25 Ω, I = 30 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
V
DD
ch
G
AR
Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
0.833 °C/W
50.0 °C/W
th (ch-c)
R
th (ch-a)
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2SK3176
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V = 0 V
DS
⎯
⎯
⎯
⎯
±10
100
⎯
μA
μA
V
GSS
GS
DS
Drain cut-off current
I
= 200 V, V
= 0 V
DSS
(BR) DSS
GS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
200
1.5
⎯
⎯
D
GS
V
V
V
V
V
V
V
= 10 V, I = 1 mA
⎯
3.5
52
⎯
V
th
DS
GS
DS
DS
DS
DS
D
R
= 10 V, I = 15 A
38
mΩ
S
DS (ON)
|Y |
D
= 10 V, I = 15 A
15
⎯
30
fs
D
C
= 10 V, V
= 10 V, V
= 10 V, V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
5400
580
1900
⎯
pF
pF
pF
iss
rss
oss
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
⎯
C
⎯
⎯
I
= 15 A
Rise time
t
D
⎯
⎯
⎯
⎯
⎯
15
55
⎯
⎯
⎯
⎯
⎯
r
10 V
GS
V
OUT
V
0 V
Turn-on time
t
on
Switching time
ns
Fall time
t
25
f
∼
V
100 V
DD
Turn-off time
t
190
125
off
Duty ≤ 1%, t = 10 μs
w
Total gate charge
∼
Q
V
160 V, V
= 10 V, I = 30 A
nC
g
DD
GS
D
(gate-source plus gate-drain)
∼
Gate-source charge
Q
V
V
160 V, V
160 V, V
= 10 V, I = 30 A
⎯
⎯
80
45
⎯
⎯
nC
nC
gs
DD
DD
GS
GS
D
∼
Gate-drain (“miller”) charge
Q
= 10 V, I = 30 A
gd
D
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
30
Unit
A
Continuous drain reverse current
I
⎯
⎯
⎯
⎯
DR
(Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode)
I
⎯
⎯
⎯
⎯
90
A
V
DRP
V
I
I
= 30 A, V
= 30 A, V
= 0 V
−2.0
DSF
DR
DR
GS
GS
= 0 V,
dI /dt = 100 A/μs
Reverse recovery time
t
⎯
⎯
270
3.0
⎯
⎯
ns
rr
DR
I
= 30 A, V
= 0 V,
GS
DR
dI /dt = 100 A/μs
Reverse recovery charge
Q
rr
μC
DR
Marking
TOSHIBA
K3176
Product No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
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2SK3176
I
– V
I – V
D DS
D
8
DS
20
16
12
8
50
40
30
20
10
0
15
10
4.8
10
Common source
Tc = 25°C
Pulse test
4.6
4.4
4
6
5
6
8
Common source
15
5
Tc = 25°C
Pulse test
4.2
4
3.8
3.6
3.8
4
V
= 3.4 V
GS
V
= 3.6 V
GS
16
0
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
20
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
50
40
30
20
10
0
5
4
3
2
1
0
Common source
Tc = 25°C
Common source
= 10 V
V
DS
Pulse test
Pulse test
25
I
= 30 A
D
Tc = −55°C
15
100
7.5
0
4
8
12
16
20
0
2
4
6
8
10
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
R
– I
D
DS (ON)
|Y | – I
fs
D
0.5
0.3
Common source
Tc = 25°C
100
Common source
= 10 V
25
Pulse test
V
DS
Pulse test
50
30
Tc = −55°C
0.1
100
10
0.05
0.03
V
= 10 V
GS
5
3
15
1
0.01
0.3 0.5
1
3
5
10
30 50
100
1
3
5
10
30
50
100
Drain current
I
(A)
Drain current
I
(A)
D
D
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2SK3176
R
– Tc
I
– V
DR DS
DS (ON)
0.10
0.08
0.06
0.04
0.02
0
100
Common source
= 10 V
Common source
Tc = 25°C
V
GS
I
= 30 A
D
50
30
Pulse test
Pulse test
15
7.5
10
10
5
3
5
3
V
= 0 V
GS
1
0
−80
−40
0
40
80
120
160
0.4
0.8
1.2
1.6
2.0
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
5
4
3
2
1
Common source
= 10 V
10000
V
DS
= 1 mA
D
I
C
iss
Pulse test
3000
1000
C
oss
300
100
Common source
= 0 V
C
rss
V
GS
f = 1 MHz
Tc = 25°C
0
30
0.1
−80
−40
0
40
80
120
160
0.3
1
3
10
30
100
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Dynamic Input/Output
Characteristics
P
– Tc
D
250
200
150
100
50
200
20
Common source
= 30 A
Tc = 25°C
I
D
V
DS
Pulse test
150
100
50
15
10
5
80
V
= 40 V
DD
160
V
GS
80
0
0
0
0
0
200
40
80
120
160
200
40
120
160
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
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2SK3176
r
th
– t
w
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.1
0.05
P
DM
0.05
0.03
0.02
t
Single pulse
T
0.01
0.01
Duty = t/T
R
= 0.833°C/W
th (ch-c)
0.005
0.003
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse width
t
(s)
w
Safe Operating Area
E
– T
ch
AS
300
100
1000
800
600
400
200
0
I
I
max (pulse)*
D
D
100 μs*
1 ms*
50
30
max (continuous)
10
5
3
DC operation
Tc = 25°C
1
25
50
75
100
125
150
*: Single nonrepetitive
pulse Tc = 25°C
0.5
0.3
Channel temperature (initial)
T
(°C)
ch
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
0.1
1
B
VDSS
3
5
10
30 50
100
300 500
15 V
−15 V
Drain-source voltage
V
(V)
I
DS
AR
V
V
DS
DD
Test circuit
Wave form
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
B
2
R
V
= 25 Ω
VDSS
G
=
·L·I ·
Ε
AS
−
= 50 V, L = 1.66 mH
B
V
DD
DD
VDSS
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2SK3176
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third
parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-03-16
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