2SK3177 [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3177 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总9页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3177
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-745A (Z)
2nd. Edition
February 1999
Features
•
Low on-resistance
RDS = 90 mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1. Gate
2. Drain
3. Source
1
2
3
S
2SK3177
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
200
VGSS
ID
±20
V
15
A
Note1
Drain peak current
ID(pulse)
60
A
Body-drain diode reverse drain current IDR
15
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
15
A
EAR
15
mJ
W
°C
°C
Pch Note2
35
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 VNote4
ID = 8 A, VDS = 10 V Note4
VDS = 10 V
Drain to source breakdown voltage V(BR)DSS 200
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
IGSS
—
—
1.0
—
—
16
—
—
—
—
—
—
—
—
—
—
±10
10
2.5
115
125
—
µA
µA
V
IDSS
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
90
mΩ
mΩ
S
95
Forward transfer admittance
Input capacitance
20
Ciss
Coss
Crss
td(on)
tr
1600
510
250
20
—
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
—
VGS = 0
—
f = 1 MHz
—
ID = 8 A, VGS = 10 V
RL = 3.75 Ω
Rise time
120
400
170
0.85
100
—
Turn-off delay time
td(off)
tf
—
Fall time
—
Body–drain diode forward voltage VDF
—
IF = 15 A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
ns
IF = 15 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2
2SK3177
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
40
30
20
10
30
10
3
1
Operation in
this area is
limited by R
0.3
0.1
DS(on)
0.03
0.01
Ta = 25 °C
200
20 50 100
500
0
10
1
2
5
50
100
150
200
Drain to Source Voltage
V
(V)
DS
Case Temperature Tc (°C)
Typical Transfer Characteristics
= 10 V
Typical Output Characteristics
Pulse Test
50
40
30
20
10
20
16
12
8
10 V
V
DS
4 V
Pulse Test
6 V
3.5 V
3 V
=2.5 V
8
Tc = 75°C
–25°C
4
V
GS
25°C
0
0
1
2
3
4
GS
5
2
4
6
10
Gate to Source Voltage
V
(V)
Drain to Source Voltage
V
(V)
DS
3
2SK3177
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
500
5
Pulse Test
Pulse Test
4
3
2
1
200
V
GS
= 4 V
100
50
10 V
I
= 15 A
D
10 A
5 A
20
10
12
Gate to Source Voltage
10 20
Drain Current
50 100
(A)
0
4
8
16
20
1
2
5
V
(V)
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
500
25 °C
Pulse Test
20
10
5
400
300
200
100
Tc = –25 °C
75 °C
5, 10 A
5, 10 A
15 A
V
= 4 V
GS
2
15 A
1
V
= 10 V
10 V
DS
Pulse Test
0
–40
0.5
0.1 0.3
0
40
80
120
c (°C)
160
1
3
10
D
30
(A)
100
Case Temperature
T
Drain Current
I
4
2SK3177
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
10000
5000
di / dt = 50 A / µs
V
= 0, Ta = 25°C
GS
2000
1000
500
Ciss
200
100
50
Coss
Crss
200
100
50
20
10
V
= 0
GS
20
10
f = 1 MHz
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
Switching Characteristics
500
300
200
160
120
80
20
t
d(off)
V
GS
t
16
12
8
f
V
100
DS
V
= 150 V
100 V
50 V
DD
t
r
30
10
t
d(on)
I
= 15 A
D
40
4
0
V
= 150 V
100 V
50 V
3
1
DD
V
= 10 V, V
= 30 V
DD
GS
PW = 5 µs, duty < 1%
0
3
1
40
80
120
160
200
0.1
0.3
10
(A)
30100
Gate Charge Qg (nc)
Drain Current
I
D
5
2SK3177
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
20
16
12
8
I
V
= 15 A
= 50 V
AP
DD
duty < 0.1 %
Rg > 50 Ω
10 V
V
= 0, –5 V
GS
4
4
0
5 V
Pulse Test
0
0.4
0.8
1.2
1.6
SD
2.0
(V)
25
50
75
100
125
150
Source to Drain Voltage
V
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50Ω
V
DD
0
6
2SK3177
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57 °C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 30 V
90%
td(off)
td(on)
t
f
tr
7
2SK3177
Package Dimensions
Unit: mm
2.8 ± 0.2
2.5 ± 0.2
10.0 ± 0.3
7.0 ± 0.3
φ
3.2 ± 0.2
1.2 ± 0.2
1.4 ± 0.2
4.45 ± 0.3
2.7
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
0.5 ± 0.1
TO–220FM
SC–67
—
Hitachi Code
EIAJ
JEDEC
8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Europe
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
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Singapore 049318
Tel: 535-2100
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Germany
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Tel: <886> (2) 2718-3666
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Telex: 40815 HITEC HX
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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