2SK3177-E [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3177-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3177
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1089-0300
(Previous: ADE-208-745A)
Rev.3.00
Sep 07, 2005
Features
•
Low on-resistance
RDS =90mΩ typ.
•
•
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2
3
S
Rev.3.00 Sep 07, 2005 page 1 of 7
2SK3177
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
200
V
V
±20
15
A
Note1
Drain peak current
ID(pulse)
60
A
Body-drain diode reverse drain current
Avalanche current
IDR
15
A
Note3
IAP
15
15
A
Note3
Avalanche energy
EAR
Pch Note2
mJ
W
°C
°C
Channel dissipation
35
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
200
±20
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 VNote4
ID = 8 A, VGS = 4 V Note4
ID = 8 A, VDS = 10 V Note4
—
±10
10
2.5
115
125
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
90
mΩ
mΩ
S
—
95
Forward transfer admittance
Input capacitance
16
—
20
Ciss
Coss
Crss
td(on)
tr
1600
510
250
20
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
—
120
400
170
0.85
100
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body–drain diode forward voltage
VDF
—
—
IF = 15 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
—
ns
IF = 15 A, VGS = 0
diF/ dt = 50 A/µs
Note: 4. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 7
2SK3177
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
40
30
20
10
30
10
3
1
Operation in
this area is
limited by R
DS(on)
0.3
0.1
0.03
0.01
Ta = 25°C
0
20 50 100
200
500
10
1
2
5
50
100
150
200
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
20
16
12
8
Pulse Test
10 V
VDS = 10 V
Pulse Test
4 V
6 V
3.5 V
3 V
VGS =2.5 V
8
Tc = 75°C
–25°C
4
25°C
0
0
1
2
3
4
5
2
4
6
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
500
200
5
4
3
2
1
Pulse Test
Pulse Test
VGS = 4 V
100
50
10 V
ID = 15 A
10 A
5 A
20
10
12
10 20
Drain Current ID (A)
50 100
0
4
8
16
20
1
2
5
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
2SK3177
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
50
500
400
300
200
100
25°C
Pulse Test
20
10
5
Tc = –25°C
75°C
5, 10 A
15 A
VGS = 4 V
2
5, 10 A
15 A
10 V
1
VDS = 10 V
Pulse Test
0
0.5
–40
0
40
80
120
160
0.1 0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
1000
500
10000
5000
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
2000
1000
500
Ciss
200
100
50
Coss
Crss
200
100
50
20
10
VGS = 0
20
10
f = 1 MHz
0.1 0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
300
200
160
120
80
20
t
d(off)
VGS
t
f
16
12
8
100
VDS
VDD = 150 V
100 V
50 V
t
r
30
10
t
d(on)
ID = 15 A
40
4
0
VDD = 150 V
100 V
50 V
3
1
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0
3
1
40
80
120
160
200
0.1
0.3
10
30100
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.3.00 Sep 07, 2005 page 4 of 7
2SK3177
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
20
16
12
8
IAP = 15 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
10 V
VGS = 0, –5 V
4
4
0
5 V
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
• L • IAP •
VDSS – VDD
L
1
2
2
EAR
=
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
50 Ω
15 V
VDD
0
Rev.3.00 Sep 07, 2005 page 5 of 7
2SK3177
Switching Time Test Circuit
Vin Monitor
Switching Time Waveforms
90%
Vout
Monitor
D.U.T.
RL
10%
10%
Vin
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
r
d(on)
t
f
d(off)
Rev.3.00 Sep 07, 2005 page 6 of 7
2SK3177
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
Package Name
MASS[Typ.]
1.8g
Unit: mm
PRSS0003AD-A
TO-220FM / TO-220FMV
10.0 0.3
7.0 0.3
2.8 0.2
2.5 0.2
φ 3.2 0.2
1.2 0.2
1.4 0.2
4.45 0.3
2.5
0.7 0.1
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SK3177-E
500 pcs
Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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