2SK3192 [PANASONIC]
Silicon N-channel power MOSFET; 硅N沟道功率MOSFET
| 型号： | 2SK3192 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon N-channel power MOSFET |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
5.0 0.2
15.0 0.3
11.0 0.2
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
(3.2)
φ 3.2 0.1
• Low ON resistance Ron
• No secondary breakdown
■ Applications
• PDP
• Switching mode regulator
2.0 0.1
0.6 0.2
2.0 0.2
1.1 0.1
■ Absolute Maximum Ratings TC = 25°C
5.45 0.3
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
Unit
V
10.9 0.5
2
1: Gate
2: Drain
3: Source
250
1
3
30
V
EIAJ: SC-92
TOP-3F-B1 Package
30
A
Peak drain current
IDP
120
A
Marking Symbol: K3192
Avalanche energy capability *
Power dissipation
EAS
PD
925
mJ
W
100
Internal Connection
Ta = 25°C
3
D
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
G
Note) : L = 1.74 mH, I = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C
*
L
S
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Symbol
VDSS
IDSS
Conditions
Min
Typ
Max
Unit
V
ID = 1 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
250
10
1
µA
µA
V
IGSS
=
Vth
2
8
4
Drain-source ON resistance
Forward transfer admittance
RDS(on) VGS = 10 V, ID = 15 A
50
15
68
mΩ
S
Yfs
VDS = 10 V, ID = 15 A
Short-circuit forward transfer capacitance
(Common source)
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
4200
pF
Short-circuit output capacitance
(Common source)
Coss
Crss
1600
650
pF
pF
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
VDD = 100 V, ID = 15 A, RL = 6.7 Ω
VGS = 10 V
45
ns
ns
ns
ns
115
330
130
Turn-off delay time
Fall time
Publication date: January 2004
SJG00029BED
1
2SK3192
■ Electrical Characteristics (continued) TC = 25°C 3°C
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Symbol
VDSF
trr
Conditions
IDR = 30 A, VGS = 0
Min
Typ
Max
Unit
V
−1.5
L = 230 µH, VDD = 100 V
IDR = 15 A, di/dt = 100 A/µs
VDD = 100 V, ID = 15 A
VGS = 10 V
260
1.6
95
ns
Qrr
µC
Qg
nC
Gate-source charge
Qgs
34
nC
Gate-drain charge
Qgd
12
nC
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Rth(ch-c)
Rth(ch-a)
1.25
41.7
°C/W
°C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
PD Ta
ID VDS
103
102
10
30
25
20
15
10
5
120
100
80
60
40
20
0
Non repetitive pulse
TC = 25°C
(1) TC = Ta
TC = 25°C
VGS = 10 V
(2) Without heat sink
PD = 3 W
(1)
IDP
t = 100 µs
ID
5 V
DC
1 ms
4.5 V
10 ms
100 ms
1
4 V
(2)
3 V
10−1
0
1
10
102
103
0
50
100
150
0
2
4
6
8
10 12 14
(
)
( )
Drain-source voltage VDS V
(
)
V
Ambient temperature Ta °C
Drain-source voltage VDS
VGS ID
RDS(on) ID
Yfs ID
100
80
60
40
20
0
50
40
30
20
10
0
30
25
20
15
10
5
VDS = 10 V
TC = 25°C
VGS = 10 V
TC = 25°C
VDS = 10 V
TC = 25°C
0
0
10
20
30
0
2
4
6
8
10
0
5
10 15 20 25 30 35
(
)
A
Drain current ID
(
)
A
Drain current ID
(
)
A
Drain current ID
SJG00029BED
2
2SK3192
Ciss , Coss , Crss VDS
104
103
102
10
f = 1 MHz
TC = 25°C
0
20
40
60
80
100
(
)
Drain-source voltage VDS
V
SJG00029BED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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