2SK3203(L) [HITACHI]
0.028ohm, POWER, FET, LDPAK-3;
| 型号： | 2SK3203(L) |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | 0.028ohm, POWER, FET, LDPAK-3 |
| 文件： | 总12页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3203(L), 2SK3203(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1384A (Z)
2nd. Edition
Jan. 2001
Features
•
Low on-resistance
RDS(on) =11m typ.
•
•
Low drive current
5V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
D
1
2
3
1
G
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
2SK3203(L), 2SK3203(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
30
VGSS
±20
V
ID
45
A
1
Drain peak current
ID(pulse)
*
180
A
Body-drain diode reverse drain current ID R
45
A
Channel dissipation
Channel temperature
Storage temperature
Pch*2
50
W
°C
°C
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK3203(L), 2SK3203(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
ID = 10mA, VGS = 0
Gate to source leak current
IGSS
—
—
1.5
—
—
13
—
—
—
—
—
—
—
—
—
—
—
—
±0.1
10
3.0
14
28
—
µA
µA
V
VGS = ±20V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1mA, VDS = 10V*1
ID = 20A, VGS = 10V*1
ID = 20A, VGS = 5V*1
ID = 20A, VDS = 10V*1
VDS = 10V
Zero gate voltege drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
11
mΩ
mΩ
S
18
Forward transfer admittance
Input capacitance
|yfs|
22
Ciss
Coss
1200
380
200
23
—
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
Output capacitance
—
VGS = 0
Reverse transfer capacitance Crss
—
f = 1MHz
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qg
Qgs
Qgd
td(on)
tr
—
VDD = 10V
4.0
7.0
17
—
VGS = 10V
—
ID = 45A
—
VGS = 10V, ID = 20A
RL = 0.5Ω
300
85
—
Turn-off delay time
Fall time
td(off)
tf
—
65
—
Body–drain diode forward
voltage
VDF
1.15
—
IF = 45A, VGS = 0
Body–drain diode reverse
recovery time
trr
—
60
—
ns
IF =45A, VGS = 0
diF/ dt =20A/µs
Note: 1. Pulse test
3
2SK3203(L), 2SK3203(S)
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
80
1000
300
100
30
10
3
60
40
20
Operation in
this area is
limited by R
1
DS(on)
0.3
0.1
Ta = 25°C
3
30
0
0.1 0.3
1
10
100
50
100
150
200
Drain to Source Voltage
V
(V)
DS
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
= 10 V
50
40
30
20
10
50
40
30
20
10
10V
6 V
5 V
Pulse Test
V
DS
Pulse Test
4.5 V
4 V
Tc = 75°C
25°C
V
= 3.5 V
8
GS
6
—25°C
0
0
10
2
4
6
8
2
4
10
Gate to Source Voltage
V
(V)
GS
Drain to Source Voltage
V
(V)
DS
4
2SK3203(L), 2SK3203(S)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
0.5
0.4
0.3
0.2
0.1
Pulse Test
Pulse Test
50
20
V
= 5 V
GS
10 V
10
5
I
= 10 A
D
2
1
5 A
2 A
0.1
0
4
8
12
16
20
0.2 0.5 1
2
5
10 20
(A)
100
50
Gate to Source Voltage
V
(V)
Drain Current
I
GS
D
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
50
100
30
Pulse Test
Tc = —25 °C
40
30
20
10
10
10 A
25 °C
3
1
5 V
75 °C
2A, 5 A
I
= 2 A, 5 A, 10 A
D
0.3
0.1
V
= 10 V
40
GS
V
= 10 V
DS
Pulse Test
0
—40
0.1 0.3
3
30
10
0
80
120
160
1
100
Case Temperature Tc (°C)
Drain Current I (A)
D
5
2SK3203(L), 2SK3203(S)
Typical Capacitance vs.
Drain to Source Voltage
Body—Drain Diode Reverse
Recovery Time
10000
1000
500
3000
1000
Ciss
200
100
50
Coss
300
100
Crss
20
10
30
10
di / dt = 20 A / µs
= 0, Ta = 25°C
V
= 0
GS
V
f = 1 MHz
GS
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40 50
Reverse Drain Current
I
DR
Drain to Source Voltage V
(V)
DS
Dynamic Input Characteristics
= 45A
Switching Characteristics
= 10 V , V = 10 V
1000
500
50
20
I
V
GS
DD
D
RG = 50Ω , duty < 1 %
V
GS
40
30
20
10
16
12
8
V
= 25 V
10 V
5 V
DD
200
100
50
t
r
t
V
d(off)
DS
t
f
V
= 25 V
10 V
5 V
4
0
DD
20
10
t
d(on)
0
0.1 0.2
0.5
1
2
5
10 20
20
40
60
80
100
Drain Current
I
(A)
Gate Charge Qg (nc)
D
6
2SK3203(L), 2SK3203(S)
Reverse Drain Current vs.
Souece to Drain Voltage
50
40
30
20
10
10 V
5 V
V
= 0,-5V
GS
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
Source to Drain Voltage
V
(V)
SD
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch — c(t) = s (t) ¥ ch — c
ch — c = 2.5°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10
100
1 m
10 m
100 m
1
10
Pulse Width PW (S)
7
2SK3203(L), 2SK3203(S)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
R
L
10%
10%
90%
Vin
V
DD
Vin
10V
Vout
10%
50Ω
= 10 V
90%
td(off)
td(on)
t
f
tr
8
2SK3203(L), 2SK3203(S)
Package Dimensions
As of January, 2001
Unit: mm
4.44 ± 0.2
1.3 ± 0.15
10.2 ± 0.3
2.59 ± 0.2
1.2 ± 0.2
1.27 ± 0.2
+ 0.2
– 0.1
0.86
0.76 ± 0.1
2.54 ± 0.5
0.4 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (L)
—
EIAJ
—
Mass (reference value)
1.4 g
9
2SK3203(L), 2SK3203(S)
As of January, 2001
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.27 ± 0.2
0.4 ± 0.1
+ 0.2
– 0.1
1.2 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (S)-(2)
—
EIAJ
—
Mass (reference value)
1.35 g
10
2SK3203(L), 2SK3203(S)
As of January, 2001
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.27 ± 0.2
0.4 ± 0.1
+ 0.2
1.2 ± 0.2
2.54 ± 0.5
0.86
– 0.1
2.54 ± 0.5
Hitachi Code
LDPAK (S)-(2)
JEDEC
—
EIAJ
—
Mass (reference value)
1.35 g
11
2SK3203(L), 2SK3203(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that
the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential
damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12
相关型号：
2SK3204-AZ
Power Field-Effect Transistor, 15A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-10, 3 PIN
NEC
2SK3205(2-7B3B)
TRANSISTOR 5 A, 150 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B3B, SC-64, 3 PIN, FET General Purpose Power
TOSHIBA
2SK3205_06
Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明