2SK3176_09 [TOSHIBA]

Switching Regulator, DC-DC Converter and Motor Drive Applications; 开关稳压器, DC-DC转换器和电机驱动应用
2SK3176_09
型号: 2SK3176_09
厂家: TOSHIBA    TOSHIBA
描述:

Switching Regulator, DC-DC Converter and Motor Drive Applications
开关稳压器, DC-DC转换器和电机驱动应用

转换器 稳压器 开关 电机 驱动 DC-DC转换器
文件: 总6页 (文件大小:162K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SK3176  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)  
2SK3176  
Switching Regulator, DC-DC Converter and Motor Drive  
Applications  
Unit: mm  
Low drain-source ON resistance: R  
= 38 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 30 S (typ.)  
fs  
Low leakage current: I  
= 100 mA (max) (V  
= 200 V)  
DSS  
DS  
Enhancement-mode: V = 1.5 to 3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
200  
200  
±20  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
I
1. GATE  
D
Drain current  
A
2. DRAIN (HEAT SINK)  
3. SOURCE  
Pulse (Note 1)  
I
120  
150  
DP  
Drain power dissipation  
(Tc = 25°C)  
P
W
D
AS  
AR  
JEDEC  
Single pulse avalanche energy  
(Note 2)  
E
925  
mJ  
JEITA  
SC-65  
Avalanche current  
I
30  
15  
A
TOSHIBA  
2-16C1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 4.6 g (typ.)  
T
ch  
150  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: = 50 V, T = 25°C (initial), L = 1.66 mH, R = 25 Ω, I = 30 A  
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.  
V
DD  
ch  
G
AR  
Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change  
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
0.833 °C/W  
50.0 °C/W  
th (ch-c)  
R
th (ch-a)  
1
2009-09-29  
2SK3176  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= ±16 V, V = 0 V  
DS  
±10  
100  
μA  
μA  
V
GSS  
GS  
DS  
Drain cut-off current  
I
= 200 V, V  
= 0 V  
DSS  
(BR) DSS  
GS  
Drain-source breakdown voltage  
Gate threshold voltage  
Drain-source ON resistance  
Forward transfer admittance  
Input capacitance  
V
I
= 10 mA, V  
= 0 V  
200  
1.5  
D
GS  
V
V
V
V
V
V
V
= 10 V, I = 1 mA  
3.5  
52  
V
th  
DS  
GS  
DS  
DS  
DS  
DS  
D
R
= 10 V, I = 15 A  
38  
mΩ  
S
DS (ON)  
|Y |  
D
= 10 V, I = 15 A  
15  
30  
fs  
D
C
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
= 0 V, f = 1 MHz  
5400  
580  
1900  
pF  
pF  
pF  
iss  
rss  
oss  
GS  
GS  
GS  
Reverse transfer capacitance  
Output capacitance  
C
C
I
= 15 A  
Rise time  
t
D
15  
55  
r
10 V  
GS  
V
OUT  
V
0 V  
Turn-on time  
t
on  
Switching time  
ns  
Fall time  
t
25  
f
V
100 V  
DD  
Turn-off time  
t
190  
125  
off  
Duty 1%, t = 10 μs  
w
Total gate charge  
Q
V
160 V, V  
= 10 V, I = 30 A  
nC  
g
DD  
GS  
D
(gate-source plus gate-drain)  
Gate-source charge  
Q
V
V
160 V, V  
160 V, V  
= 10 V, I = 30 A  
80  
45  
nC  
nC  
gs  
DD  
DD  
GS  
GS  
D
Gate-drain (“miller”) charge  
Q
= 10 V, I = 30 A  
gd  
D
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
30  
Unit  
A
Continuous drain reverse current  
I
DR  
(Note 1)  
Pulse drain reverse current (Note 1)  
Forward voltage (diode)  
I
90  
A
V
DRP  
V
I
I
= 30 A, V  
= 30 A, V  
= 0 V  
2.0  
DSF  
DR  
DR  
GS  
GS  
= 0 V,  
dI /dt = 100 A/μs  
Reverse recovery time  
t
270  
3.0  
ns  
rr  
DR  
I
= 30 A, V  
= 0 V,  
GS  
DR  
dI /dt = 100 A/μs  
Reverse recovery charge  
Q
rr  
μC  
DR  
Marking  
Note 5: A line under a Lot No. identifies the indication of product  
Labels.  
Not underlined: [[Pb]]/INCLUDES > MCV  
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]  
TOSHIBA  
K3176  
Product No.  
Please contact your TOSHIBA sales representative for details as to  
environmental matters such as the RoHS compatibility of Product.  
The RoHS is the Directive 2002/95/EC of the European Parliament  
and of the Council of 27 January 2003 on the restriction of the use of  
certain hazardous substances in electrical and electronic equipment.  
(or abbreviation code)  
Lot No.  
Note 5  
2
2009-09-29  
2SK3176  
I
– V  
I – V  
D DS  
D
8
DS  
20  
16  
12  
8
50  
40  
30  
20  
10  
0
15  
10  
4.8  
10  
Common source  
Tc = 25°C  
Pulse test  
4.6  
4.4  
4
6
5
6
8
Common source  
15  
5
Tc = 25°C  
Pulse test  
4.2  
4
3.8  
3.6  
3.8  
4
V
= 3.4 V  
GS  
V
= 3.6 V  
GS  
16  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
4
8
12  
20  
Drain-source voltage  
V
DS  
(V)  
Drain-source voltage  
V
DS  
(V)  
I
D
– V  
V
– V  
DS GS  
GS  
50  
40  
30  
20  
10  
0
5
4
3
2
1
0
Common source  
Tc = 25°C  
Common source  
= 10 V  
V
DS  
Pulse test  
Pulse test  
25  
I
= 30 A  
D
Tc = −55°C  
15  
100  
7.5  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
Gate-source voltage  
V
GS  
(V)  
Gate-source voltage  
V
GS  
(V)  
R
– I  
D
DS (ON)  
|Y | – I  
fs  
D
0.5  
0.3  
Common source  
Tc = 25°C  
100  
Common source  
= 10 V  
25  
Pulse test  
V
DS  
Pulse test  
50  
30  
Tc = −55°C  
0.1  
100  
10  
0.05  
0.03  
V
= 10 V  
GS  
5
3
15  
1
0.01  
0.3 0.5  
1
3
5
10  
30 50  
100  
1
3
5
10  
30  
50  
100  
Drain current  
I
(A)  
Drain current  
I
(A)  
D
D
3
2009-09-29  
2SK3176  
R
Tc  
I
– V  
DR DS  
DS (ON)  
0.10  
0.08  
0.06  
0.04  
0.02  
0
100  
Common source  
= 10 V  
Common source  
Tc = 25°C  
V
GS  
I
= 30 A  
D
50  
30  
Pulse test  
Pulse test  
15  
7.5  
10  
10  
5
3
5
3
V
= 0 V  
GS  
1
0
80  
40  
0
40  
80  
120  
160  
0.4  
0.8  
1.2  
1.6  
2.0  
Case temperature Tc (°C)  
Drain-source voltage  
V
DS  
(V)  
Capacitance – V  
V
Tc  
th  
DS  
5
4
3
2
1
Common source  
= 10 V  
10000  
V
DS  
= 1 mA  
D
I
C
iss  
Pulse test  
3000  
1000  
C
oss  
300  
100  
Common source  
= 0 V  
C
rss  
V
GS  
f = 1 MHz  
Tc = 25°C  
0
30  
0.1  
80  
40  
0
40  
80  
120  
160  
0.3  
1
3
10  
30  
100  
Drain-source voltage  
V
DS  
(V)  
Case temperature Tc (°C)  
Dynamic Input/Output  
Characteristics  
P
Tc  
D
250  
200  
150  
100  
50  
200  
20  
Common source  
= 30 A  
Tc = 25°C  
I
D
V
DS  
Pulse test  
150  
100  
50  
15  
10  
5
80  
V
= 40 V  
DD  
160  
V
GS  
80  
0
0
0
0
0
200  
40  
80  
120  
160  
200  
40  
120  
160  
Case temperature Tc (°C)  
Total gate charge  
Q
(nC)  
g
4
2009-09-29  
2SK3176  
r
th  
– t  
w
3
1
Duty = 0.5  
0.5  
0.3  
0.2  
0.1  
0.1  
0.05  
P
DM  
0.05  
0.03  
0.02  
t
Single pulse  
T
0.01  
0.01  
Duty = t/T  
R
= 0.833°C/W  
th (ch-c)  
0.005  
0.003  
10 μ  
100 μ  
1 m  
10 m  
100 m  
1
10  
Pulse width  
t
(s)  
w
Safe Operating Area  
E
– T  
ch  
AS  
300  
100  
1000  
800  
600  
400  
200  
0
I
I
max (pulse)*  
D
D
100 μs*  
1 ms*  
50  
30  
max (continuous)  
10  
5
3
DC operation  
Tc = 25°C  
1
25  
50  
75  
100  
125  
150  
*: Single nonrepetitive  
pulse Tc = 25°C  
0.5  
0.3  
Channel temperature (initial)  
T
(°C)  
ch  
Curves must be derated  
linearly with increase in  
temperature.  
V
max  
DSS  
0.1  
1
B
VDSS  
3
5
10  
30 50  
100  
300 500  
15 V  
15 V  
Drain-source voltage  
V
(V)  
I
DS  
AR  
V
V
DS  
DD  
Test circuit  
Wave form  
1
2
B
2
R
V
= 25 Ω  
VDSS  
G
=
·L·I ·  
Ε
AS  
= 50 V, L = 1.66 mH  
B
V
DD  
DD  
VDSS  
5
2009-09-29  
2SK3176  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also  
refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the  
specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public  
impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the  
aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,  
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology  
products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign  
Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software  
or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
6
2009-09-29  

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