2SK3079 [TOSHIBA]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 2-5N1A, 4 PIN, FET RF Power;
| 型号： | 2SK3079 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 2-5N1A, 4 PIN, FET RF Power 放大器 晶体管 |
| 文件： | 总3页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3079
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3079
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm
ꢀ Output Power
ꢀ Gain
: P = 35.5 dBmW (Min.)
O
: G = 9.5 dB (Min.)
P
ꢀ Drain Efficiency
: η = 58% (Typ.)
D
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
RATING
UNIT
V
V
10
5
V
V
DSS
Gate-Source Voltage
Drain Current
GSS
I
5
A
D
Power Dissipation
P
T
20.0
150
W
°C
°C
D*
ch
stg
Channel Temperature
Storage Temperature Range
T
−45~150
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
JEDEC
EIAJ
TOSHIBA
—
—
2−5N1A
MARKING
000707EAA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2001-03-07 1/3
2SK3079
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Output Power
SYMBOL
TEST CONDITION
= 4.8V
MIN
TYP.
MAX
UNIT
P
35.5
—
—
58.0
—
—
—
dBmW
%
O
V
DS
Iidle = 800 mA (V
= adjust)
GS
Drain Efficiency
η
D
f = 915MHz, P = 26 dBmW
i
Z
= Z = 50 Ω
L
G
Power Gain
G
P
9.5
0.30
—
—
dB
Threshold Voltage
Drain Cut-off Current
Gate-Source Leakage Current
V
V
V
V
V
= 4.8 V, I = 0.5 mA
—
1.30
10
5
V
th
DS
DS
GS
DS
D
I
I
= 10 V, V
= 0 V
GS
—
µA
DSS
GSS
= 5 V, V = 0 V
DS
—
—
µA
= 6.5 V, f = 915 MHz
P = 26 dBmW
i
Load Mismatch
—
No Degradation
—
P
= 35.5 dBmW (V
= adjust)
GS
O
VSWR LOAD 10: 1 all phase
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
2001-03-07 2/3
2SK3079
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
2001-03-07 3/3
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