2SK3079A [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type; 东芝场效应晶体管硅N沟道MOS型
| 型号： | 2SK3079A |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3079A
Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
Unit: mm
·
·
·
Output power: P = 33.50dBmW (2.2 W) (min)
o
Gain: G = 13.50dB (min)
p
Drain Efficiency: ηD = 50.0% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
V
V
10
3
V
V
DSS
GSS
I
3
A
D
Power dissipation
P
(Note 1)
20.0
150
W
°C
°C
D
Channel temperature
Storage temperature range
T
ch
T
−45~150
stg
Note 1: Tc = 25°C
JEDEC
JEITA
―
―
Marking
TOSHIBA
2-5N1A
Type Name
UD
F
**
Dot
Lot No.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
P
33.5
50.0
13.5
¾
¾
¾
¾
0.8
¾
¾
¾
¾
¾
¾
10
5
dBmW
%
O
V
= 4.5 V, Iidle = 50 mA
DS
(V
= adjust)
GS
Drain efficiency
η
D
f = 470 MHz, P = 20dBmW
i
Z
= Z = 50 Ω
L
G
Power gain
G
dB
p
Threshold voltage
Drain cut-off current
Gate-source leakage current
V
V
V
V
V
= 4.5 V, I = 0.5 mA
V
th
DS
DS
GS
DS
D
I
I
= 10 V, V
= 0 V
GS
¾
µA
DSS
GSS
= 5 V, V = 0 V
DS
¾
µA
= 5 V, f = 470 MHz,
P = 20dBmW,
i
Load mismatch
(Note 2)
¾
No degradation
¾
P = 33.5dBmW (V
= adjust)
GS
o
VSWR LOAD 10:1 all phase
Caution: This is transistor the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
1
2002-01-09
2SK3079A
Test Circuit
P
2200 pF
2200 pF
P
o
i
Z
= 50 W
Z
= 50 W
L
G
3.3 W
L1
2200 pF
L2
V
20 pF
20 pF
13 pF 20 pF
10000 pF
10 mF
10000 pF
680 kW
V
GS
DS
2
2002-01-09
2SK3079A
P – P , G , hD
Iidle – G , hD
p
i
o
p
(f = 470 MHz, Iidle = 50 mA, V = 4.5 V, Tc = 25°C)
(f = 470 MHz, P = 20dBmW, V = 4.5 V, Tc = 25°C)
i ds
ds
40
35
30
25
20
15
10
60
50
40
30
20
10
0
17
16
15
14
13
60
55
50
P
(dBmW)
o
Gp (dB)
hD (%)
G
(dB)
p
hD (%)
0
10
20
30
0
25
50
75
100
P
(dBmW)
Iidle (mA)
i
P – P
P – Ids
i
o
i
(f = 470 MHz, V = 4.5 V, Tc = 25°C)
(f = 470 MHz, V = 4.5 V, Tc = 25°C)
ds
ds
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Iidle = 50 mA
Iidle = 30 mA
Iidle = 70 mA
Iidle = 50 mA
Iidle = 30 mA
Iidle = 70 mA
0
10
20
30
0
10
20
30
P
(dBmW)
P
(dBmW)
i
i
Vds – G , hD
P – P
i o
p
(f = 470 MHz, P = 20dBmW, Iidle = 50 mA, Tc = 25°C)
(f = 470 MHz, Iidle = 50 mA, Tc = 25°C)
i
20
18
16
14
12
10
8
70
68
66
64
62
60
58
56
54
52
50
40
39
36
34
32
30
28
26
24
22
20
18
16
14
12
10
G
Eff
p
6
Vdd = 4.5 V
Vdd = 2.4 V
Vdd = 3.6 V
Vdd = 6.0 V
4
2
0
0
2
4
6
8
0
0
20
30
Vds (V)
P
(dBmW)
i
3
2002-01-09
2SK3079A
P – Ids
i
(f = 470 MHz, Iidle = 50 mA, Tc = 25°C)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Vdd = 4.5 V
Vdd = 2.4 V
Vdd = 3.6 V
Vdd = 6.0 V
0
10
20
30
P
(dBmW)
i
Caution: These are typical curves and devices are not necessarily guaranteed at these curves.
4
2002-01-09
2SK3079A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2002-01-09
相关型号：
©2020 ICPDF网 联系我们和版权申明