2SK3081 [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3081 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：988K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3081
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1064-0400
(Previous: ADE-208-636A)
Rev.4.00
Sep 07,2005
Features
•
Low on-resistance
DS(on) = 10 mΩ typ.
R
•
•
4 V gate drive devices.
High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 6
2SK3081
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
30
V
V
±20
45
180
A
Note1
Drain peak current
ID(pulse)
A
Body-drain diode reverse drain current
Channel dissipation
IDR
45
A
Pch Note2
Tch
75
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
30
±20
—
Typ
—
Max
—
Unit
Test Conditions
mA, VGS = 0
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IDSS
—
—
±100 µA, VDS = 0
DS = 30 V, VGS = 0
—
10
—
IGSS
—
—
VGS = ±16 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 20 A, VGS = 10 V Note3
ID = 20 A, VGS = 4 V Note3
ID = 20 A, VDS = 10 V Note3
VGS(off)
RDS(on)
RDS(on)
|yfs|
1.0
—
—
Static drain to source on state
resistance
10
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
20
—
Ciss
Coss
Crss
td(o
10
32
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
VGS = 10 V, ID = 20 A,
RL = 0.5 Ω
300
180
200
1.0
75
—
Turn-off delay time
Fall time
—
—
—
—
Body–drain diode forward volta
—
—
IF = 45 A, VGS = 0
Body–drain diode reverse
recovery time
rr
—
—
ns
IF = 45 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 3. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 6
2SK3081
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
75
1000
300
100
10 µs
30
10
3
50
Operation in
this area is
limited by R
DS(on)
1
25
0.3
0.1
Ta = 25°C
1 shot pulse
0
3
30
50
100
150
200
0.1 0.3
1
10
100
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
er Characteristics
10 V
8 V
100
80
60
40
20
1
60
40
20
6 V
5 V
Pulse Test
25°C
= –25°C
4.5 V
4 V
75°C
3.5 V
3
VDS = 10 V
Pulse Test
VGS
0
0
2
4
6
8
10
2
4
0
Drain to Sourc(V)
Gate to Source Voltage VGS (V)
Drain to tion Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
100
50
1.0
0.8
0.6
0.4
0.2
Pulse Test
Pulse Test
ID = 50 A
20
10
5
VGS = 4 V
10 V
20 A
10 A
12
0
4
8
16
20
1
2
5
10 20
50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 6
2SK3081
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
50
40
30
20
50
Pulse Test
20
10
5
Tc = –25°C
25°C
10 A
ID = 20 A
75°C
VGS = 4 V
2
50 A
10, 20 A
10
0
1
VDS = 10 V
Pulse Test
10 V
0.5
0.1
–40
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
TCapacitance
vource Voltage
1000
500
10000
5
Ciss
200
100
50
Coss
500
Crss
200
100
5
20
10
di / dt = 50 A / µs
VGS = 0, Ta =
VGS = 0
f = 1 MHz
0.1 0.3
1
3
1
0
10
20
30
40
50
Reverse Drain C
Drain to Source Voltage VDS (V)
Dynamcteristics
ID = 45 A
Switching Characteristics
50
40
30
20
10
20
1000
500
16
12
8
t
d(off)
200
100
50
VGS
VDD = 5 V
10 V
VDS
t
f
15 V
t
r
t
d(on)
4
0
VDD = 15 V
10 V
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty < 1 %
20
10
5 V
0
20
40
60
80
100
0.1 0.3
1
3
10
30
100
Drain Current ID (A)
Gate Charge Qg (nc)
Rev.4.00 Sep 07, 2005 page 4 of 6
2SK3081
Reverse Drain Current vs.
Source to Drain Voltage
100
80
60
40
20
10 V
5 V
VGS = 0, –5 V
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Wi
3
1
= 25°C
D = 1
0.5
0.3
0.1
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.67°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
m
10 m
100 m
1
10
Pulse Width PW (S)
Switching uit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
d(on)
t
f
t
d(off)
r
Rev.4.00 Sep 07, 2005 page 5 of 6
2SK3081
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name
MASS[Typ.]
1.8g
Unit: mm
TO-220AB / TO-220ABV
Ordering Information
Part Name
Quanti
Shipping Container
2SK3081-E
500 pcs
Box (Sack)
Note: For some grades, production med. Please contact the Renesas sales office to check the state of
production before ordering t
Rev.4.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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