2SK3080 [HITACHI]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | 2SK3080 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总9页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3080
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-635A (Z)
2nd. Edition
May 1998
Features
•
Low on-resistance
RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
•
•
4V gate drive devices.
High speed switching
Outline
TO–220AB
D
G
1. Gate
2. Drain(Flange)
3. Source
1
2
3
S
2SK3080
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
30
VGSS
ID
±20
V
30
A
Note1
Drain peak current
ID(pulse)
120
A
Body-drain diode reverse drain current IDR
30
A
Channel dissipation
Channel temperature
Storage temperature
PchNote2
50
W
°C
°C
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS 30
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 30 V, VGS = 0
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10VNote3
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
IDSS
—
—
1.0
—
—
10
µA
µA
V
IGSS
—
±10
2.0
28
VGS(off)
RDS(on)
—
Static drain to source on state
resistance
20
mΩ
Static drain to source on state
resistance
RDS(on)
—
35
50
mΩ
ID = 15A, VGS = 4VNote3
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
12
—
—
—
—
—
—
—
—
—
18
—
—
—
—
—
—
—
—
—
—
S
ID = 15A, VDS = 10VNote3
VDS = 10V
750
520
210
16
pF
pF
pF
ns
ns
ns
ns
V
VGS = 0
f = 1MHz
VGS = 10V, ID = 15A
RL = 0.67Ω
260
85
Turn-off delay time
Fall time
td(off)
tf
90
Body–drain diode forward voltage VDF
1.0
45
IF = 30A, VGS = 0
Body–drain diode reverse
recovery time
trr
ns
IF = 30A, VGS = 0
diF/ dt =50A/µs
Note: 3. Pulse test
2
2SK3080
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
100
75
200
100
10 µs
50
20
50
10
5
Operation in
this area is
limited by R
25
2
1
DS(on)
Ta = 25 °C
0.5
0
3
30
50
100
150
200
0.1 0.3
1
10
100
Drain to Source Voltage
V
(V)
DS
Case Temperature Tc (°C)
Typical Transfer Characteristics
25°C
Typical Output Characteristics
50
40
30
20
10
50
40
30
20
10
10 V
6 V
5 V
Pulse Test
4.5 V
–25°C
Tc = 75°C
4 V
3.5 V
= 3 V
V
6
GS
V
= 10 V
DS
Pulse Test
0
0
2
4
6
8
GS
10
2
4
8
10
Gate to Source Voltage
V
(V)
Drain to Source Voltage
V
(V)
DS
3
2SK3080
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
500
1.0
0.8
0.6
0.4
0.2
Pulse Test
Pulse Test
200
100
50
V
GS
= 4 V
10 V
I
= 20 A
D
20
10
5
10 A
5 A
12
Gate to Source Voltage
0
4
8
16
20
1
2
5
10 20
50 100
(A)
V
(V)
GS
Drain Current
I
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
100
30
100
Pulse Test
Tc = –25 °C
80
60
40
20
10
25 °C
75 °C
I
= 20 A
5, 10 A
D
V
= 4 V
GS
3
1
5, 10, 20 A
0.3
0.1
V
= 10 V
DS
Pulse Test
10 V
0
–40
0
40
80
120 160
0.1 0.3
1
3
10
D
30
(A)
100
Case Temperature Tc (°C)
Drain Current
I
4
2SK3080
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
1000
300
V
GS
= 0
f = 1 MHz
100
2000
1000
500
30
10
Ciss
Coss
3
1
200
100
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
Crss
GS
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
DS
50
Reverse Drain Current
I
DR
Drain to Source Voltage V
(V)
Dynamic Input Characteristics
= 30 A
Switching Characteristics
50
40
30
20
10
20
1000
I
D
300
100
16
12
8
V
= 5 V
10 V
25 V
DD
t
f
t
V
t
d(off)
DS
r
30
10
V
GS
t
d(on)
4
0
V
= 25 V
10 V
5 V
3
1
DD
V
= 10 V, V
= 10 V
DD
GS
PW = 5 µs, duty < 1 %
0
8
16
24
32
40
0.1 0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current
I
(A)
D
5
2SK3080
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
10 V
V
= 0, –5 V
GS
5 V
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
Source to Drain Voltage
V
(V)
SD
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
6
2SK3080
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 10 V
90%
td(off)
td(on)
t
f
tr
7
2SK3080
Package Dimensions
Unit: mm
10.16±0.2
9.5
+ 0.1
– 0.08
4.44±0.2
f 3.6
8.0
1.26±0.15
1.2±0.1
1.27±0.1
1.5 max
0.5±0.1
2.7 max
0.76 ±0.1
2.54 ±0.5
2.54 ±0.5
TO–220AB
SC–46
—
Hitachi Code
EIAJ
JEDEC
8
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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