2SK3079A_07 [TOSHIBA]
Silicon N Channel MOS Type 470 MHz Band Amplifier Applications; 硅N沟道MOS型470兆赫频带放大器的应用
| 型号： | 2SK3079A_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3079A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
Unit: mm
(Note)The TOSHIBA products listed in this document are intended for
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment
•
•
•
Output power: P = 33.50dBmW (2.2 W) (min)
o
Gain: G = 13.50dB (min)
p
Drain Efficiency: ηD = 50.0% (min)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
10
3
V
V
DSS
Gate-source voltage
Drain current
GSS
I
3
A
D
Power dissipation
P
(Note 1)
20.0
150
W
°C
°C
D
Channel temperature
Storage temperature range
T
ch
JEDEC
JEITA
―
―
T
stg
−45~150
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-5N1A
Weight: 0.08 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Type Name
UD
F
**
Dot
Lot No.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
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2SK3079A
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
P
33.5
50.0
13.5
⎯
⎯
⎯
⎯
0.8
⎯
⎯
⎯
⎯
⎯
⎯
10
5
dBmW
%
O
V
= 4.5 V, Iidle = 50 mA
= adjust)
DS
(V
GS
f = 470 MHz, P = 20dBmW
Drain efficiency
η
D
i
Z
G
= Z = 50 Ω
L
Power gain
G
dB
p
Threshold voltage
Drain cut-off current
Gate-source leakage current
V
V
V
V
V
= 4.5 V, I = 0.5 mA
V
th
DS
DS
GS
DS
D
I
= 10 V, V
= 0 V
GS
⎯
μA
DSS
GSS
I
= 5 V, V = 0 V
DS
⎯
μA
= 5 V, f = 470 MHz,
P = 20dBmW,
i
Load mismatch
(Note 2)
⎯
No degradation
⎯
P = 33.5dBmW (V
= adjust)
o
GS
VSWR LOAD 10:1 all phase
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Test Circuit
P
2200 pF
2200 pF
P
o
i
Z
G
= 50 Ω
Z = 50 Ω
L
3.3 Ω
L1
2200 pF
L2
V
20 pF
20 pF
13 pF 20 pF
10000 pF
10 μF
10000 pF
680 kΩ
V
GS
DS
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2SK3079A
P – P , G , ηD
Iidle – G , ηD
p
i
o
p
(f = 470 MHz, Iidle = 50 mA, V = 4.5 V, Tc = 25°C)
(f = 470 MHz, P = 20dBmW, V = 4.5 V, Tc = 25°C)
ds
i
ds
40
35
30
25
20
15
10
60
50
40
30
20
10
0
17
16
15
14
13
60
55
50
P
(dBmW)
o
Gp (dB)
ηD (%)
G
(dB)
p
ηD (%)
0
10
20
30
0
25
50
75
100
P
(dBmW)
Iidle (mA)
i
P – P
i
P – Ids
i
o
(f = 470 MHz, V = 4.5 V, Tc = 25°C)
(f = 470 MHz, V = 4.5 V, Tc = 25°C)
ds
ds
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Iidle = 50 mA
Iidle = 30 mA
Iidle = 70 mA
Iidle = 50 mA
Iidle = 30 mA
Iidle = 70 mA
0
10
20
30
0
10
20
30
P
(dBmW)
P
(dBmW)
i
i
Vds – G , ηD
P – P
i o
p
(f = 470 MHz, P = 20dBmW, Iidle = 50 mA, Tc = 25°C)
(f = 470 MHz, Iidle = 50 mA, Tc = 25°C)
i
20
18
16
14
12
10
8
70
68
66
64
62
60
58
56
54
52
50
40
39
36
34
32
30
28
26
24
22
20
18
16
14
12
10
G
p
Eff
6
Vdd = 4.5 V
Vdd = 2.4 V
Vdd = 3.6 V
Vdd = 6.0 V
4
2
0
0
2
4
6
8
0
0
20
30
Vds (V)
P
(dBmW)
i
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2SK3079A
P – Ids
i
(f = 470 MHz, Iidle = 50 mA, Tc = 25°C)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Vdd = 4.5 V
Vdd = 2.4 V
Vdd = 3.6 V
Vdd = 6.0 V
0
10
20
30
P
(dBmW)
i
Caution: These are typical curves and devices are not necessarily guaranteed at these curves.
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2SK3079A
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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