2SC5976 [TOSHIBA]
Transistor Silicon NPN Epitaxial Type; 晶体管NPN硅外延型
| 型号： | 2SC5976 |
| 厂家： | 
TOSHIBA |
| 描述： | Transistor Silicon NPN Epitaxial Type |
| 文件： | 总5页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5976
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5976
High-Speed Switching Applications
Unit: mm
DC-DC Converter Applications
Strobe Flash Applications
+0.2
2.8-0.3
+0.2
1.6-0.1
•
•
•
High DC current gain: h
= 250 to 400 (I = 0.3 A)
C
FE
1
2
Low collector-emitter saturation voltage: V
= 0.14 V (max)
CE (sat)
High-speed switching: t = 25 ns (typ.)
f
3
Maximum Ratings
=
(Ta 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
50
50
V
V
V
V
V
CBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
V
CEX
CEO
EBO
1.Base
2.Emitter
3.Collector
30
V
V
6
I
3.0
DC
C
Collector current
Base current
A
A
JEDEC
―
I
5.0
Pulse
CP
JEITA
―
0.3
I
B
TOSHIBA
2－3S1A
1.00
0.625
150
Collector power dissipation (t=10s)
Total collector power dissipation (DC)
Junction temperature
P
C
(Note.1)
W
T
j
°C
°C
Storage temperature range
T
stg
−55 to 150
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
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2SC5976
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
I
= 50 V, I = 0
⎯
⎯
⎯
⎯
0.1
0.1
⎯
I
μA
μA
V
CB
EB
E
CBO
= 6 V, I = 0
Emitter cut-off current
I
C
EBO
= 10 mA, I = 0
30
⎯
Collector-emitter breakdown voltage
V
(BR) CEO
C
B
V
V
= 2 V, I = 0.3 A
250
120
⎯
⎯
400
⎯
h
(1)
(2)
CE
C
FE
FE
DC current gain
h
= 2 V, I = 1.0 A
⎯
CE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 1.0 A, I =33mA
B
⎯
0.14
1.10
V
V
C
C
CE (sat)
= 1.0 A, I =33mA
B
⎯
⎯
V
BE (sat)
Cob
V
= 10 V, I = 0, f=1MHz
18
40
320
25
pF
CB
E
⎯
⎯
⎯
⎯
⎯
⎯
t
r
See Figure 1.
Switching time
V
I
≈ 12V, R = 12 Ω
ns
Storage time
Fall time
t
CC
L
stg
= −I = 33 mA
t
f
B1
B2
V
CC
20 µs
I
I
I
B1
B1
B2
Output
Input
I
B2
Duty cycle < 1%
Figure 1 Switching Time Test Circuit & Timing Chart
MARKING
Part No. (or abbreviation code)
W W
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
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2SC5976
I
– V
h – I
FE C
C
CE
3.0
1000
100
10
20
15
10
8
Ta = 100°C
2.5
2.0
1.5
25°C
6
4
−55°C
1.0
0.5
0
I
B
= 2 mA
Common emitter
Common emitter
VCE = 2 V
Single nonrepetitive pulse
Ta = 25°C
Single nonrepetitive pulse
0.001 0.01
0.1
1
10
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector current
I
C
(A)
Collector−emitter voltage
V
CE
(V)
V
– I
C
V
– I
CE (sat)
BE (sat) C
1
10
Common emitter
= 30
Single nonrepetitive pulse
Common emitter
= 30
Single nonrepetitive pulse
β
β
Ta = −55°C
0.1
1
−55°C
Ta = 100°C
100°C
25°C
25°C
0.01
0.001
0.1
0.001
0.01
0.1
1
10
0.01
0.1
1
10
Collector current
I
C
(A)
Collector current
I
C
(A)
P – Ta
c
I
– V
BE
C
0.8
0.6
0.4
3.0
2.5
2.0
DC Operation Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm2)
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1.5
1.0
0.5
0
Ta = 100°C
−55°C
0.2
0
25°C
0
20
40
60
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1.0
BE
1.2
Ambient temperature Ta (°C)
Base−emitter saturation voltage
V
(V)
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2SC5976
r
– t
w
th
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe operating area
10
10 ms*
1 ms*
100 µs*
I
max (Pulsed)*
C
10 µs*
I
C
max (Continuous)*
100 ms*
10 s*
1
DC operation
Ta = 25°C
*: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2).
0.1
These characteristic curves must
be derated linearly with increase
in temperature.
0.01
0.1
1
10
100
Collector−emitter voltage
V
CE
(V)
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2SC5976
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-01
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ONSEMI
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