2SC5994 [SANYO]

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications; NPN外延平面硅晶体管大电流开关应用
2SC5994
型号: 2SC5994
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
NPN外延平面硅晶体管大电流开关应用

晶体 开关 晶体管
文件: 总4页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENN8035  
NPN Epitaxial Planar Silicon Transistor  
2SC5994  
High-Current Switching Applications  
Applications  
Voltage regulators, relay drivers, lamp drivers, electrical equipment.  
Features  
Adoption of MBIT process.  
High current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
100  
100  
50  
6
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
V
I
2
A
C
Collector Current (Pulse)  
Base Current  
I
4
A
CP  
I
B
400  
1.3  
3.5  
150  
mA  
W
W
°C  
°C  
Mounted on a ceramic board (450mm20.8m)  
Tc=25°C  
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
I
V
CB  
V
EB  
V
CE  
V
CE  
=50V, I =0  
1
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
Marking : FJ  
I
=4V, I =0  
1
EBO  
C
h
h
1
2
=2V, I =100mA  
200  
40  
560  
FE  
FE  
C
=2V, I =1.5A  
C
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
21505EA TS IM TB-00001137 No.8035-1/4  
2SC5994  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gain-Bandwidth Product  
f
V
V
=10V, I =300mA  
C
420  
9
MHz  
pF  
mV  
V
T
CE  
Output Capacitance  
Cob  
=10V, f=1MHz  
CB  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
V
V
(sat)  
I
C
I
C
I
C
I
C
I
C
=1A, I =50mA  
135  
0.9  
300  
CE  
B
(sat)  
=1A, I =50mA  
1.2  
BE  
B
V
=10µA, I =0  
100  
V
(BR)CBO  
E
V
=100µA, R =0  
BE  
100  
50  
6
V
(BR)CES  
(BR)CEO  
(BR)EBO  
V
V
=1mA, R =∞  
BE  
V
I =10µA, I =0  
E
V
C
t
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
30  
330  
40  
ns  
ns  
ns  
on  
Storage Time  
t
stg  
Fall Time  
t
f
Package Dimensions  
unit : mm  
2038B  
Switching Time Test Circuit  
I
B1  
PW=20µs  
D.C.1%  
OUTPUT  
I
B2  
4.5  
1.6  
INPUT  
R
B
1.5  
V
R
R
L
50Ω  
+
+
100µF  
470µF  
V
= --5V  
V
=25V  
CC  
BE  
1
2
3
0.4  
0.4  
I =10I = --10I =700mA  
C
B1  
B2  
0.5  
1.5  
3.0  
0.75  
1 : Base  
2 : Collector  
3 : Emitter  
SANYO : PCP  
I
-- V  
I -- V  
C BE  
C
CE  
2.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
=2V  
CE  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
2mA  
1mA  
0.2  
0
0.2  
0
I =0  
B
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
Collector-to-Emitter Voltage, V  
CE  
-- V IT07587  
Base-to-Emitter Voltage, V  
BE  
-- V  
IT07588  
No.8035-2/4  
2SC5994  
h
FE  
-- I  
f
-- I  
C
C
T
1000  
1000  
V
CE  
=10V  
V
=2V  
CE  
7
7
5
5
3
2
3
2
100  
7
5
100  
7
3
0.01  
5
0.01  
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
0.1  
1.0  
0.1  
1.0  
IT07589  
IT07590  
Collector Current, I -- A  
C
Collector Current, I -- A  
V
(sat) --CI  
C
Cob -- V  
CE  
CB  
5
5
I
/ I =20  
B
f=1MHz  
C
3
2
3
2
0.1  
7
5
10  
3
2
7
5
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0  
2
3
0.1  
1.0  
10  
0.1  
Collector-to-Base Voltage, V  
-- V  
IT07591  
Collector Current, I -- A  
IT07592  
CB  
V
(sat) -- CI  
C
V
(sat) -- I  
BE  
CE  
C
7
5
3
2
I
/ I =20  
B
I
/ I =50  
B
C
C
3
2
0.1  
1.0  
7
5
7
5
3
2
3
0.01  
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
0.1  
1.0  
0.1  
1.0  
IT07594  
Collector Current, I -- A  
Collector Current, I -- A  
IT07593  
-- TaC  
C
P
A S O  
C
1.4  
10  
7
5
1.3  
1.2  
I
=4A  
<10µs  
CP  
3
2
I =2A  
C
1.0  
0.8  
0.6  
0.4  
1.0  
7
5
3
2
0.1  
7
5
3
2
0.2  
0
Tc=25°C  
Single Pulse  
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5 7  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
Collector-to-Emitter Voltage, V  
-- V IT07595  
Ambient Temperature, Ta -- °C  
IT07596  
CE  
No.8035-3/4  
2SC5994  
P
-- Tc  
C
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, Tc -- °C  
IT07597  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer’s  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer’s products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of February, 2005. Specifications and information herein are subject  
to change without notice.  
PS No.8035-4/4  

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