2SC5996A [ISAHAYA]

SMALL-SIGNAL TRANSISTOR; 小信号晶体管
2SC5996A
型号: 2SC5996A
厂家: ISAHAYA ELECTRONICS CORPORATION    ISAHAYA ELECTRONICS CORPORATION
描述:

SMALL-SIGNAL TRANSISTOR
小信号晶体管

晶体 晶体管
文件: 总4页 (文件大小:76K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMALL-SIGNAL TRANSISTOR〉  
2S C 5996  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
Unit : mm  
OUTLINE DRAWING  
DESCRIPTION  
ISAHAYA 2SC5996 is a super mini package resin sealed  
silicon NPN epitaxial transistor for muting and switching.  
application  
2.1  
0.425  
0.425  
FEATURE  
High Emitter to Base voltage  
High Reverse hFE  
VEBO=50V  
Low ON RESISTANCE. RON=1Ω  
Small packege for mounting  
APPLICATION  
JEITA SC-70  
For muting, switching application  
TERMINALCONNECTOR  
ꢀꢀꢀꢀꢀBASE  
ꢀꢀꢀꢀꢀEMITTER  
ꢀꢀꢀꢀꢀCOLLECTOR  
MAXIMUM RATINGS (Ta=25℃)  
Parameter  
Ratings  
Symbol  
Unit  
VCBO  
VCEO  
VEBO  
I C  
V
V
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
50  
12  
MARKING  
50  
V
200  
mA  
mW  
5 A  
PC  
Collector dissipation  
Junction temperature  
Storage temprature  
150  
Tj  
+125  
-55 ~ +125  
hFE ITEM  
TYPE NAME  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test conditions  
Unit  
Min  
Max  
0.1  
0.1  
I CBO  
I EBO  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
C to E saturation voltage  
Gain bandwidth product  
Collector output capacitance  
VCB=50V, I E=0mA  
μA  
μA  
VEB=50V, IC=0mA  
VCE=2V, I C=4mA  
hFE  
200  
1200  
VCE(sat)  
mV  
MHz  
pF  
30  
30  
I C=30mA, I B=3mA  
VCE=6V, I C=4mA  
fT  
VCB=10V, I E=0mA, f=1MHz  
Cob  
5.0  
Item  
A
B
hFE  
200 to 700 350 to 1200  
5A  
Marking  
5B  
SMALL-SIGNAL TRANSISTOR〉  
2S C 5996  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
COMMON EMITTER OUTPUT  
COMMON EMITTER TRANSFER  
50  
40  
30  
20  
10  
0
50  
140μA  
120μA  
Ta=25℃  
Ta=25℃  
VCE=2V  
40  
30  
20  
10  
0
100μA  
80μA  
60μA  
40μA  
IB=20μA  
0
0.2  
0.4  
0.6  
0.8  
1
0
2
4
6
8
10  
COLLECTOR TO EMITTER VOLTAGEVCE(V)  
BASE TO EMITTER VOLTAGE VBE(V)  
DC REVERSE CURRENT GAIN  
VS. COLLECTOR CURRENT  
DC FORWARD CURRENT GAIN  
VS. COLLECTOR CURRENT  
10000  
1000  
100  
10000  
1000  
100  
Ta=25℃  
VCE=2V  
Ta=25℃  
VEC=2V  
10  
10  
-0.1  
-1  
-10  
-100  
0.1  
1
10  
100  
COLLECTOR CURRENT IC(mA)  
COLLECTOR CURRENTIC(mA)  
COLLECTOR TO EMITTER SATURATION VOLTAGE  
VS.COLLECTOR CURRENT  
ON RESISTANCE VS. BASE CURRENT  
1000  
100  
10  
10  
Ta=25℃  
Ta=25℃  
IC/IB=10  
1
1
0.1  
0.1  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
BASE CURRENT IB(mA)  
COLLECTOR CURRENTIC(mA)  
SMALL-SIGNAL TRANSISTOR〉  
2S C 5996  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE  
GAIN BAND WIDTH PRODUCT VS.  
EMITTER CURRENT  
COLLECTOR OUTPUT CAPACITANCE  
VS. COLLECTOR TO BASE VOLTAGE  
1000  
100  
10  
100  
Ta=25℃  
IE=0  
f=1MHz  
Ta=25℃  
VCE=2V  
10  
1
-0.1  
-1  
-10  
-100  
0.1  
1
10  
100  
EMITTER CURRENTIE(mA)  
COLLECTOR TO BASE VOLTAGE VCB(V)  
Marketing division, Marketing planning department  
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan  
Keep·IsSaAfHetAyYfAirEstleicntryonoiucsr cCiorrcpuoirtadtioensipguntss!the maximum effort into making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or  
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures  
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or  
mishap.  
Notes regarding these materials  
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the  
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging  
·IISSAAHHAAYYAA oErlethcitrrdonpiacrstyC. orporation assumes no responsibility for any damage, or infringement of any third party's rights ,  
·Aorlilgiinnfaotrimngatinionthecounsteainoef daniny pthroesdeucmt daatetari,adlsi,aginrcalmudsi,ncghparrotsdourctcidrcautait,adpiapglicraamtiosnaenxdamchpalertss,croenptareinseedntinintfhoermseatmioanteornialpsr.oducts  
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice  
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics  
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed  
·hISeAreHinA.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used  
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an  
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,  
·TsuhcehparisorawppriattreantuaspoprrosvyaslteofmIsSAfoHrAtrYaAnsEploercttartoionnic,sveChoircpuolarar,timonedisicnael,caeesrsoasrpyatcoer,enpuricnlteaorr,roerpurondduecrseeian rwehpoelaeteorruinsep.art these  
·Imf athteersiaelsp.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a  
license from the Japanese government and cannot be imported into a country other than the approved destination. Any  
diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is  
·Pprleoahsibeitecdo.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these  
materials or the products contained therein.  
Jan.2003  

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