2SC5993 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC5993 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5993
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Complement to Type 2SA2140
APPLICATIONS
·Power amplification
·For TV VM circuit
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
180
180
6
UNIT
V
V
V
A
A
Collector Current-Continuous
Collector Current-Peak
1.5
ICM
3.0
Collector Power Dissipation
@ Ta=25℃
2.0
PC
W
Collector Power Dissipation
@TC=25℃
20
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5993
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= 10mA; IB= 0
180
IC= 1A; IB= 0.1A
0.5
100
100
240
V
)
sat
ICBO
VCB= 180V; IE= 0
μA
μA
IEBO
hFE
fT
Emitter Cutoff Current
VEB= 6V; IC= 0
DC Current Cain
IC= 0.1A; VCE= 5V
60
Current-Gain—Bandwidth Product
Output Capacitance
IC= 0.2A; VCE= 10V; f= 10MHz
IE= 0; VCB= 10Vftet= 1.MHz
130
10
MHz
pF
COB
Switching Time, Resistance Loaded
Turn-on Time
Storage Time
Fall Time
0.1
0.5
0.1
μs
μs
μs
ton
tstg
tf
IC= 0.4A, IB1= -IB2= 0.04A;
VCC= 100V
hFE Classifications
Q
P
60-140
120-240
2
isc Website：www.iscsemi.cn
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