2SC5980(TP-FA) [ONSEMI]
TRANSISTOR,BJT,NPN,50V V(BR)CEO,8A I(C),TO-252;
| 型号： | 2SC5980(TP-FA) |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,BJT,NPN,50V V(BR)CEO,8A I(C),TO-252 |
| 文件： | 总4页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN8091
NPN Epitaxial Planar Silicon Transistor
2SC5980
High-Current Switching Applications
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
•
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow h width.
FE
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
100
100
50
6
V
V
CES
CEO
EBO
V
V
V
V
I
C
8
A
Collector Current (Pulse)
Base Current
I
11
A
CP
I
B
2
A
1.0
15
150
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
0.1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=40V, I =0
µA
µA
CBO
CB
EB
CE
E
I
V
V
=4V, I =0
0.1
EBO
C
h
=2V, I =500mA
250
400
FE
C
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21405EA TS IM TB-00000320 No.8091-1/4
2SC5980
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Gain-Bandwidth Product
Output Capacitance
f
V
V
=10V, I =500mA
C
330
28
MHz
pF
mV
mV
V
T
CE
Cob
=10V, f=1MHz
CB
I
C
I
C
I
C
I
C
I
C
I
C
=3.5A, I =175mA
125
100
0.83
190
B
Collector-to-Emitter Saturation Voltage
V
V
(sat)
CE
=2A, I =40mA
150
1.2
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
(sat)
=2A, I =40mA
B
BE
V
=10µA, I =0
100
V
(BR)CBO
E
V
=100µA, R =∞
BE
100
50
6
V
(BR)CES
(BR)CEO
(BR)EBO
V
V
=1mA, R =∞
BE
V
I =10µA, I =0
E
V
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
30
420
25
ns
ns
ns
on
Storage Time
t
stg
Fall Time
t
f
Package Dimensions
unit : mm
2045B
Package Dimensions
unit : mm
2044B
6.5
2.3
5.0
6.5
2.3
0.5
4
5.0
0.5
4
0.85
0.7
0.5
0.85
1
1.2
2
3
1 : Base
2 : Collector
3 : Emitter
0.6
0.6
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
3
4 : Collector
2.3
2.3
SANYO : TP-FA
2.3
2.3
SANYO : TP
Switching Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
100µF
= --5V
470µF
V
V
=25V
CC
BE
I =20I = --20I =2.5A
C
B1
B2
No.8091-2/4
2SC5980
I
-- V
I
-- V
C BE
C
CE
8
7
6
5
4
3
2
8
7
6
5
4
3
2
V
=2V
CE
5mA
1
0
1
0
I =0
B
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Collector-to-Emitter Voltage, V
CE
-- V IT08219
Base-to-Emitter Voltage, V
-- V
IT08220
BE
h
FE
-- I
f
-- I
T C
C
1000
1000
V
=10V
CE
V
=2V
CE
7
5
7
5
3
2
3
2
100
7
5
100
3
2
7
5
10
0.01
2
3
3
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0.01
0.1
1.0
10
0.1
1.0
IT08221
IT08222
Collector Current, I -- A
C
Collector Current, I -- A
C
V
(sat) -- I
Cob -- V
CE
C
CB
2
7
I
/ I =20
B
f=1MHz
C
5
3
2
100
7
5
0.1
7
5
3
2
3
2
0.01
0.01
10
0.1
2
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
1.0
10
100
IT08223
0.1
1.0
Collector-to-Base Voltage, V
CB
-- V
Collector Current, I -- A
IT08224
C
V
(sat) -- I
V
(sat) -- I
BE
C
CE
C
3
2
3
2
I
/ I =50
B
I
/ I =50
C
C
B
1.0
7
5
1.0
3
2
7
5
0.1
7
5
3
2
3
2
0.01
0.01
0.01
2
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
IT08226
0.1
1.0
10
0.1
1.0
Collector Current, I -- A
Collector Current, I -- A
IT08225
C
C
No.8091-3/4
2SC5980
A S O
P
-- Ta
C
2
1.2
1.0
0.8
0.6
0.4
I
=11A
10µs
100ms
10ms
CP
10
7
5
I =8A
C
3
2
1.0
7
5
3
2
0.1
7
5
0.2
0
3
2
Tc=25°C
Single Pulse
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT08227
IT02972
Collector-to-Emitter Voltage, V
-- V
Ambient Temperature, Ta -- °C
CE
P
-- Tc
C
18
16
15
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
IT02973
Case Temperature, Tc -- °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2005. Specifications and information herein are subject
to change without notice.
PS No.8091-4/4
相关型号：
2SC5980-TL
Small Signal Bipolar Transistor, 8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
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