2SC5993 [PANASONIC]

For power amplification For TV VM circuit; 对于功率放大对于电视VM电路
2SC5993
型号: 2SC5993
厂家: PANASONIC    PANASONIC
描述:

For power amplification For TV VM circuit
对于功率放大对于电视VM电路

电视
文件: 总3页 (文件大小:73K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Power Transistors  
2SC5993  
Silicon NPN epitaxial planar type  
Unit: mm  
4.6 0.2  
For power amplification  
For TV VM circuit  
9.9 0.3  
2.9 0.2  
φ 3.2 0.1  
Features  
Satisfactory linearity of forward current transfer ratio hFE  
High transition frequency (fT)  
Full-pack package which can be installed to the heat sink with one  
screw.  
1.4 0.2  
1.6 0.2  
2.6 0.1  
0.8 0.1  
0.55 0.15  
Absolute Maximum Ratings TC = 25°C  
2.54 0.30  
5.08 0.50  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
180  
1
2
3
1: Base  
2: Collector  
3: Emitter  
180  
V
6
V
TO-220D-A1 Package  
Collector current  
IC  
ICP  
PC  
1.5  
A
Internal Connection  
Peak collector current  
Collector power dissipation  
3
20  
A
W
C
E
Ta = 25°C  
2.0  
B
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
VCEO  
ICBO  
Conditions  
Min  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
IC = 10 mA, IB = 0  
180  
VCB = 180 V, IE = 0  
VEB = 6 V, IC = 0  
100  
100  
240  
0.5  
µA  
µA  
IEBO  
hFE  
VCE = 5 V, IC = 0.1 A  
60  
VCE(sat) IC = 1 A, IB = 0.1 A  
V
fT  
VCE = 10 V, IC = 0.2 A, f = 10 MHz  
130  
10  
MHz  
pF  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
(Common base, input open circuited)  
Turn-on time  
Storage time  
Fall time  
ton  
tstg  
tf  
IC = 0.4 A, Resistance loaded  
IB1 = 0.04 A, IB2 = − 0.04 A  
VCC = 100 V  
0.1  
1.5  
0.1  
µs  
µs  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
P
hFE  
60 to 140  
120 to 240  
Publication date: July 2004  
SJD00320AED  
1
2SC5993  
PC Ta  
Safe operation area  
35  
10  
Non repetitive pulse, TC = 25°C  
(1) TC = Ta  
(2) Without heat sink  
ICP  
IC  
30  
25  
1
(1)  
20  
15  
10  
0.1  
5
t = 1 ms  
t = 10 ms  
t = 1 s  
(2)  
0
0.01  
0
20 40 60 80 100 120 140 160  
1
10  
100  
1000  
(
)
Ambient temperature Ta °C  
(
V
)
Collector-emitter voltage VCE  
SJD00320AED  
2
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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