2SC5029_04 [TOSHIBA]
Power Amplifier Applications; 功率放大器的应用![2SC5029_04](http://pdffile.icpdf.com/pdf1/p00189/img/icpdf/2SC502_1067564_icpdf.jpg)
型号: | 2SC5029_04 |
厂家: | ![]() |
描述: | Power Amplifier Applications |
文件: | 总5页 (文件大小:147K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SC5029
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
Industrial Applications
Power Amplifier Applications
Power Switching Applications
Unit: mm
•
•
•
•
Low saturation voltage: V = 0.5 V (max) (I = 1 A, I = 0.05 A)
CE (sat) C B
High collector power dissipation: P = 1.3 W
C
High-speed switching: t
= 1.0 µs (typ.)
stg
Complementary to 2SA1892
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
50
50
5
V
V
CBO
CEO
EBO
V
I
3
A
C
Base current
I
0.2
1.3
150
A
B
JEDEC
JEITA
―
―
Collector power dissipation
Junction temperature
P
W
°C
°C
C
T
j
TOSHIBA
2-8M1A
Storage temperature range
T
stg
−55 to 150
Weight: 0.55 g (typ.)
1
2004-07-07
2SC5029
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
―
―
50
―
―
―
1.0
1.0
―
µA
µA
V
CBO
CB
E
Emitter cut-off current
= 5 V, I = 0
C
EBO
EB
Collector-emitter breakdown voltage
V
I = 10 mA, I = 0
C B
(BR) CEO
h
FE (1)
V
CE
= 2 V, I = 0.5 A
70
―
240
C
DC current gain
(Note)
h
V
= 2 V, I = 1.5 A
40
―
―
―
―
―
―
―
0.5
1.2
―
FE (2)
CE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
I
I
= 1 A, I = 0.05 A
V
V
CE (sat)
BE (sat)
C
B
V
= 1 A, I = 0.05 A
―
C
B
f
V
CE
V
CB
= 2 V, I = 0.5 A
100
30
MHz
pF
T
C
Collector output capacitance
C
ob
= 10 V, I = 0, f = 1 MHz
―
C
Turn-on time
t
―
―
―
0.1
1.0
0.1
―
―
―
on
Output
20 µs
I
I
B1
B2
Input
Switching time
µs
Storage time
Fall time
t
stg
30 V
t
f
I
B1
= −I = 0.05 A, duty cycle ≤ 1%
B2
Note: h
classification O: 70 to 140, Y: 120 to 240
FE (1)
Marking
C5029
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
2
2004-07-07
2SC5029
I
– V
h – I
FE C
C
CE
2.4
2.0
1.6
1.2
0.8
0.4
0
1000
25
Common emitter
Ta = 25°C
Common emitter
= 2 V
V
CE
20
500
300
18
15
12
Ta = 100°C
10
8
100
25
−55
6
4
50
30
I
B
= 2 mA
0
8
10
0.01
0.03
0.1
0.3
1
0
2
4
6
10
12
(V)
14
Collector current
I
(A)
C
Collector-emitter voltage
V
CE
V
– I
C
V
– I
CE (sat)
BE (sat) C
1
5
3
Common emitter
/I = 20
Common emitter
/I = 20
I
C
I
B
0.5
0.3
C B
Ta = −55°C
1
0.1
0.5
0.3
25
100
Ta = 100°C
0.05
25
−55
0.02
0.01
0.1
0.01
0.03
0.1
0.3
1
0.03
0.1
0.3
1
Collector current
I
C
(A)
Collector current
I
(A)
C
I
– V
BE
C
2.0
1.5
1.0
0.5
0
Common emitter
V
CE
= 2 V
Ta = 100°C
25 −55
0
0.4
0.8
1.2
1.6
(V)
2.0
Base-emitter voltage
V
BE
3
2004-07-07
2SC5029
r
– t
w
th
1000
Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C
500
300
100
50
30
10
5
3
I
B2
0.3
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
P – Ta
C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
I
I
max (pulsed)*
C
5
3
10 ms*
max (continuous)
C
1 ms*
100 ms*
1
0.5
DC operation
Ta = 25°C
0.1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0
25
50
75
100
125
150
175
0.05
Ambient temperature Ta (°C)
0.03
0.02
V
max
CEO
10
Collector-emitter voltage
0.3
1
3
30
(V)
100
V
CE
4
2004-07-07
2SC5029
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-07
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TRANSISTOR 2000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
TOSHIBA
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