2SC5034 [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型（高击穿电压高速开关）
| 型号： | 2SC5034 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
9.9±0.3
2.9±0.2
Features
High collector to emitter VCEO
■
φ3.2±0.1
●
●
High-speed switching
●
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
2.6±0.1
0.7±0.1
1.2±0.15
1.45±0.15
Absolute Maximum Ratings (T =25˚C)
■
C
0.75±0.1
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
500
2.54±0.2
5.08±0.4
500
V
Collector to emitter voltage
400
V
1
2 3
7°
Emitter to base voltage
Peak collector current
Collector current
7
V
1:Base
2:Collector
3:Emitter
15
A
IC
7
A
TO–220E Full Pack Package
Base current
IB
3
35
A
Collector power TC=25°C
PC
W
dissipation
Ta=25°C
2.0
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 500V, IE = 0
IEBO
VCEO
hFE1
hFE2
VEB = 5V, IC = 0
Collector to emitter voltage
IC = 10mA, IB = 0
400
10
8
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 3A, IB = 0.6A
1.0
1.5
V
V
IC = 3A, IB = 0.6A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
10
MHz
µs
1.0
2.0
0.3
IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 150V
µs
µs
1
Power Transistors
2SC5034
PC — Ta
IC — VCE
VCE(sat) — IC
80
5
4
3
2
1
0
100
IC/IB=5
TC=25˚C
(1) TC=Ta
70
30
10
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
IB=300mA
250mA
60
50
40
30
20
10
0
200mA
3
1
25˚C
150mA
(1)
100mA
80mA
0.3
0.1
TC=100˚C
60mA
40mA
–25˚C
(2)
(3)
20mA
0.03
0.01
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0.01 0.03
0.1
0.3
1
3
10
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
1000
IC/IB=5
VCE=5V
VCE=10V
f=1MHz
TC=25˚C
30
10
300
100
300
100
25˚C
TC=100˚C
–25˚C
3
1
30
10
30
10
25˚C
TC=–25˚C
100˚C
0.3
0.1
3
1
3
1
0.03
0.01
0.3
0.1
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
10000
100
100
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
Non repetitive pulse
TC=25˚C
3000
1000
30
10
30
10
ICP
IC
(2IB1=–IB2
CC=150V
TC=25˚C
)
V
t=0.5ms
1ms
300
100
3
1
3
1
tstg
10ms
ton
30
10
0.3
0.1
0.3
0.1
DC
tf
3
1
0.03
0.01
0.03
0.01
0.1
0.3
1
3
10
30
100
0
1
2
3
4
5
6
7
)
8
1
3
10
30
100 300 1000
( )
V
(
A
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC5034
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
16
Lcoil=200µH
L coil
IC/IB=5
(IB1=–IB2
TC=25˚C
14
)
T.U.T
IC
12
10
8
IB1
–IB2
Vin
VCC
IC
6
4
V
clamp
tW
2
0
0
100 200 300 400 500 600 700 800
( )
V
Collector to emitter voltage VCE
Rth(t) — t
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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