2SC5036A [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型（高击穿电压高速开关）
| 型号： | 2SC5036A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 文件： | 总3页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
Features
High-speed switching
■
9.9±0.3
2.9±0.2
●
φ3.2±0.1
●
High collector to base voltage VCBO
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio hFE
●
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
2.6±0.1
0.7±0.1
1.2±0.15
1.45±0.15
Absolute Maximum Ratings (T =25˚C)
■
C
0.75±0.1
Parameter
Symbol
Ratings
Unit
2.54±0.2
5.08±0.4
Collector to
2SC5036
2SC5036A
2SC5036
900
VCBO
V
base voltage
Collector to
1000
1
2 3
7°
900
VCES
V
1:Base
2:Collector
3:Emitter
emitter voltage 2SC5036A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
1000
VCEO
VEBO
ICP
800
V
V
A
A
A
TO–220E Full Pack Package
7
2
IC
1
Base current
IB
0.3
Collector power TC=25°C
30
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
Collector cutoff
2SC5036
VCB = 900V, IE = 0
µA
current
2SC5036A
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
50
Emitter cutoff current
IEBO
VCEO
hFE1
hFE2
50
µA
µA
V
Collector to emitter voltage
IC = 10mA, IB = 0
800
8
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.2A
IC = 0.2A, IB = 0.04A
IC = 0.2A, IB = 0.04A
VCE = 10V, IC = 0.05A, f = 1MHz
Forward current transfer ratio
3
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
1.5
1.5
V
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
15
MHz
µs
0.7
2.5
0.3
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V
µs
µs
1
Power Transistors
2SC5036, 2SC5036A
PC — Ta
IC — VCE
VCE(sat) — IC
40
1.2
1.0
0.8
0.6
0.4
0.2
0
100
IC/IB=5
(1) TC=Ta
(2) With a 100 × 100 × 2mm
TC=25˚C
IB=400mA
30
10
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
350mA
300mA
250mA
200mA
TC=100˚C
25˚C
–25˚C
(1)
30
20
10
0
3
1
150mA
100mA
80mA
60mA
0.3
0.1
40mA
(2)
20mA
(3)
(4)
0.03
0.01
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
100
IC/IB=5
VCE=5V
VCE=10V
f=1MHz
TC=25˚C
30
10
300
100
30
10
3
1
30
10
3
1
TC=–25˚C
100˚C
25˚C
TC=–25˚C
0.3
0.1
3
1
0.3
0.1
25˚C
100˚C
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.001 0.003 0.01 0.03
0.1
0.3
1
(
A
)
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
1000
100
10
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
Non repetitive pulse
TC=25˚C
30
10
3
1
300
100
(2IB1=–IB2
CC=200V
TC=25˚C
)
V
t=10ms
0.3s
3
1
0.3
0.1
tstg
30
10
ton
0.3
0.1
0.03
0.01
tf
3
1
0.03
0.01
0.003
0.001
1
3
10
30
100
0
0.2
0.4
0.6
0.8
1
3
10
30
100 300 1000
(
V
)
( )
A
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC5036, 2SC5036A
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
1.6
Lcoil=100µH
L coil
IC/IB=5
(IB1=–IB2
TC=25˚C
1.4
)
T.U.T
IC
1.2
1.0
0.8
0.6
0.4
0.2
0
IB1
IC
–IB2
Vin
VCC
V
clamp
tW
0
200 400 600 800 1000 1200 1400 1600
(
V
)
Collector to emitter voltage VCE
Rth(t) — t
10000
1000
100
10
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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