2SC5030_04 [TOSHIBA]
Strobe Flash Applications; 频闪闪光灯应用
| 型号： | 2SC5030_04 |
| 厂家： | 
TOSHIBA |
| 描述： | Strobe Flash Applications |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications
Unit: mm
Medium Power Amplifier Applications
•
•
•
High DC current gain: h
: h
= 800 to 3200 (V
= 2 V, I = 0.5 A)
CE C
FE (1)
FE (2)
= 250 (min) (V
CE
= 2 V, I = 4 A)
C
Low saturation voltage: V = 0.5 V (max)
(I = 4 A, I = 40 mA)
CE (sat)
C
B
High collector power dissipation: P = 1.3 W
C
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
Collector-base voltage
V
50
40
20
8
CBO
V
CES
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
V
V
V
V
JEDEC
JEITA
―
―
DC
I
5
C
Collector current
A
Pulse
I
8
CP
(Note)
TOSHIBA
2-8M1A
Base current
I
0.5
1.3
A
B
Weight: 0.55 g (typ.)
Collector power dissipation
Junction temperature
P
W
°C
°C
C
T
150
j
Storage temperature range
T
stg
−55 to 150
Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
―
―
―
―
100
100
―
nA
nA
V
CBO
CB
E
Emitter cut-off current
= 8 V, I = 0
C
EBO
EB
Collector-emitter breakdown voltage
V
I
C
= 10 mA, I = 0
20
800
250
―
―
(BR) CEO
B
h
h
V
CE
V
CE
= 2 V, I = 0.5 A
―
3200
―
FE (1)
C
DC current gain
= 2 V, I = 4 A
―
FE (2)
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
C
= 4 A, I = 40 mA
―
0.5
1.2
―
V
V
CE (sat)
B
V
BE
V
CE
V
CE
V
CB
= 2 V, I = 4 A
―
―
C
Transition frequency
f
= 2 V, I = 0.5 A
―
150
45
MHz
pF
T
C
Collector output capacitance
C
ob
= 10 V, I = 0, f = 1 MHz
E
―
―
1
2004-07-26
2SC5030
Marking
C5030
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-07-26
2SC5030
I
– V
I – V
C BE
C
CE
10
8
8
6
4
2
0
Common emitter
Ta = 25°C
Common emitter
= 2 V
V
CE
50 40 30
20
10
6
5
Ta = 125°C
4
2
25
−40
2
I
B
= 0.5 mA
0
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1.0
(V)
1.2
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
BE
CE
h
FE
– I
C
V
– I
CE (sat) C
10000
5
3
Common emitter
Ta = 125°C
25
I
C
/I = 200
B
3000
1000
1
−40
0.3
0.1
300
100
Ta = 125°C
25
Common emitter
= 2 V
0.03
0.01
V
CE
−40
30
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
10
Collector current
I
(A)
C
Collector current
I
(A)
C
V
– I
C
BE (sat)
10
P
C
– Ta
Common emitter
1.6
I
C
/I = 200
B
3
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = −40°C
25
125
0.3
0.1
0.03
0.01
0.01
0.03
0.1
0.3
1
3
10
0
25
50
75
100
125
150
175
Collector current
I
C
(A)
Ambient temperature Ta (°C)
3
2004-07-26
2SC5030
r
– t
w
th
1000
100
10
Curves should be applied in thermal limited area. (single nonrepetitive pulse)
Ta = 25°C
1
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
20
10
I
C
max (pulsed)*
1 ms*
I
C
max (continuous)
5
3
100 ms*
10 ms*
1
DC operation
Ta = 25°C
0.5
0.3
*: Single nonrepetitive pulse
Ta = 25°C
0.1
Curves must be derated
linearly with increase in
temperature.
0.05
0.03
V
max
CEO
10
(V)
0.1
0.3 0.5
1
3
5
30
Collector-emitter voltage
V
CE
4
2004-07-26
2SC5030
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-26
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