2SC5032 [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型（高击穿电压高速开关）
| 型号： | 2SC5032 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2
9.9±0.3
2.9±0.2
Features
High-speed switching
■
φ3.2±0.1
●
●
High collector to base voltage VCBO
●
Wide area of safe operation (ASO)
●
Satisfactory linearity of foward current transfer ratio hFE
2.6±0.1
0.7±0.1
●
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
1.2±0.15
1.45±0.15
0.75±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
2.54±0.2
5.08±0.4
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
500
1
2 3
7°
500
V
Collector to emitter voltage
1:Base
2:Collector
3:Emitter
400
V
Emitter to base voltage
Peak collector current
Collector current
7
V
TO–220E Full Pack Package
6
A
IC
3
A
Base current
IB
1.2
A
Collector power TC=25°C
30
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 500V, IE = 0
IEBO
VCEO
hFE1
hFE2
VEB = 5V, IC = 0
Collector to emitter voltage
IC = 10mA, IB = 0
400
10
8
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
Forward current transfer ratio
40
1.0
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
10
MHz
µs
1.0
3.0
0.3
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
µs
µs
1
Power Transistors
2SC5032
PC — Ta
IC — VCE
VCE(sat) — IC
40
6
5
4
3
2
1
0
100
IC/IB=5
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2W)
30
10
(1)
TC=100˚C
25˚C
–25˚C
30
20
10
0
IB=500mA
400mA
300mA
3
1
200mA
0.3
0.1
100mA
50mA
(2)
(3)
0.03
0.01
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.1
0.3
1
3
10
30
100
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
100
IC/IB=5
VCE=5V
VCE=10V
f=1MHz
TC=25˚C
30
10
300
100
30
10
TC=125˚C
3
1
30
10
3
1
–25˚C
25˚C
TC=–25˚C
25˚C
125˚C
0.3
0.1
3
1
0.3
0.1
0.1
0.3
1
3
10
30
100
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
1000
100
100
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
Non repetitive pulse
TC=25˚C
30
10
30
10
300
100
(2IB1=–IB2
CC=200V
TC=25˚C
)
V
ICP
3
1
3
1
t=1ms
IC
tstg
10ms
30
10
DC
ton
tf
0.3
0.1
0.3
0.1
3
1
0.03
0.01
0.03
0.01
1
3
10
30
100
0
1
2
3
4
1
3
10
30
100 300 1000
( )
V
( )
A
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC5032
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
4.0
Lcoil=100µH
L coil
IC/IB=5
(IB1=–IB2
TC=25˚C
3.5
)
IC
T.U.T
IC
3.0
2.5
2.0
1.5
1.0
0.5
0
IB1
–IB2
Vin
VCC
V
clamp
tW
0
100 200 300 400 500 600 700 800
( )
V
Collector to emitter voltage VCE
Rth(t) — t
10000
1000
100
10
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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