BR34A [SUNMATE]

3.0A Patch Schottky diode 45V SMB series;
BR34A
型号: BR34A
厂家: SUNMATE electronic Co., LTD    SUNMATE electronic Co., LTD
描述:

3.0A Patch Schottky diode 45V SMB series

二极管 光电二极管 瞄准线 功效
文件: 总2页 (文件大小:310K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BR34 - BR320  
SURFACE MOUNT SCHOTTKY BARRIER DIODES  
VOLTAGE RANGE: 40 - 200V  
CURRENT: 3.0 A  
Features  
!
Schottky Barrier Chip  
!
!
Ideally Suited for Automatic Assembly  
Low Power Loss, High Efficiency  
!
!
!
For Use in Low Voltage Application  
Guard Ring Die Construction  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
B
SMB(DO-214AA)  
Dim  
Min  
3.30  
4.06  
1.91  
0.15  
5.00  
0.10  
0.76  
2.00  
Max  
Mechanical Data  
A
B
C
D
E
G
H
J
3.94  
4.70  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
A
J
C
!
!
Case: SMB/DO-214AA, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
D
!
!
!
Weight: 0.093 grams (approx.)  
G
H
E
All Dimensions in mm  
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol BR34 BR34A BR35 BR36 BR38 BR39 BR310 BR315 BR320 Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
40  
28  
45  
50  
35  
60  
42  
80  
56  
90  
63  
100  
70  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
31.5  
V
A
Average Rectified Output Current @TL = 105°C  
3.0  
80  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
A
= 3.0A  
VFM  
IRM  
Forward Voltage  
@IF  
0.70  
0.74  
0.80  
0.9  
V
Peak Reverse Current  
@TA = 25°C  
At Rated DC Blocking Voltage @TA = 100°C  
0.05  
20  
mA  
RJL  
RJA  
20  
75  
Typical Thermal Resistance (Note 1)  
°C/W  
Operating Temperature Range  
Storage Temperature Range  
Tj  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
Note: 1. Mounted on P.C. Board with 8.0mm2 copper pad area.  
1 of 2  
www.sunmate.tw  
RATINGS AND CHARACTERISTIC CURVES BR34 THRU BR320  
50  
3.0  
= 40V  
= 45-200V  
10  
40-45V  
2.5  
2.0  
1.5  
80-100V  
50-60V  
150-200V  
1.0  
1.0  
0
TJ=25O  
f=1.0mHz  
Visg=5mVp-p  
C
0
20  
40  
60  
80  
100 120 140 160 180  
0.1  
.4 .5 .6 .7 .8 .9 1.0 1.1  
LEAD TEMPERATURE, O  
C
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
Fig.2-TYPICALINSTANTANEOUSFORWARD  
CHARACTERISTIC  
Fig.1-FORWARDCURRENTDERATINGCURVE  
10  
90  
80  
TJ  
=100OC  
8.3ms Single  
Half Since-Wave  
JEDEC Method  
1.0  
70  
TJ=  
75OC  
60  
50  
40  
30  
20  
10  
0.1  
.01  
TJ=  
25OC  
1
2
5
10  
20  
50  
100  
.001  
NO. OF CYCLE AT 60Hz  
0
20 40 60 80 100 120 140  
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)  
Fig.4-MAXIMUMNON-REPETITIVESURGECURRENT  
Fig.3-TYPICALREVERSECHARACTERISTIC  
2 of 2  
www.sunmate.tw  

相关型号:

BR34E02-3

Serial EEPROM Series Standard EEPROM Plug & Play EEPROM
ROHM

BR34E02-W

DDR/DDR2 (For memory module) SPD Memory
ROHM

BR34E02FVT-3

Memory for Plug & Play DDR2/DDR3 SPD Memory (for Memory Modules)
ROHM

BR34E02FVT-3E2

Serial EEPROM Series Standard EEPROM Plug & Play EEPROM
ROHM

BR34E02FVT-3TR

Serial EEPROM Series Standard EEPROM Plug & Play EEPROM
ROHM

BR34E02FVT-W

Based on Serial Presence Detect 2Kbit(256X8bit) Serial EEPROM
ROHM

BR34E02FVT-WE2

DDR/DDR2 (For memory module) SPD Memory
ROHM

BR34E02FVT-WTR

DDR/DDR2 (For memory module) SPD Memory
ROHM

BR34E02FVT-W_09

DDR/DDR2 (For memory module) SPD Memory
ROHM

BR34E02NUX-3

EEPROM, 256X8, Serial, CMOS, PDSO8, 2 X 3 MM, ROHS COMPLIANT, VSON-8
ROHM

BR34E02NUX-3E2

Serial EEPROM Series Standard EEPROM Plug & Play EEPROM
ROHM